An analytical model of short channel MOSFET including velocity overshoot

2003 ◽  
Author(s):  
V. Kasemsuwan
Keyword(s):  
Analytical Model ◽  
Short Channel ◽  
Velocity Overshoot

An Analytical Modeling and Performance Analysis of Graded Work Function Gate Recessed Channel SOI-MOSFET

2019 ◽  
Vol 9 (4) ◽  
pp. 504-511
Author(s):  
Sikha Mishra ◽  
Urmila Bhanja ◽  
Guru Prasad Mishra
Keyword(s):  
Analytical Model ◽  
Surface Potential ◽  
Threshold Voltage ◽  
Silicon On Insulator ◽  
Junction Depth ◽  
Short Channel ◽  
Soi Mosfet ◽  
Minimum Surface ◽  
Recessed Channel ◽  
The Impact

Introduction: A new analytical model is designed for Workfunction Modulated Rectangular Recessed Channel-Silicon On Insulator (WMRRC-SOI) MOSFET that considers the concept of groove gate and implements an idea of workfunction engineering. Methods: The impact of Negative Junction Depth (NJD) and oxide thickness (tox) are analyzed on device performances such as Sub-threshold Slope (SS), Drain Induced Barrier Lowering (DIBL) and threshold voltage. Results: The results of the proposed work are evaluated with the Rectangular Recessed Channel-Silicon On Insulator (RRC-SOI) MOSFET keeping the metal workfunction constant throughout the gate region. Furthermore, an analytical model is developed using 2D Poisson’s equation and threshold voltage is estimated in terms of minimum surface potential. Conclusion: In this work, the impact of Negative Junction Depth (NJD) on minimum surface potential and the drain current are also evaluated. It is observed from the analysis that the analog switching performance of WMRRC-SOI MOSFET surpasses RRC-SOI MOSFET in terms of better driving capability, high Ion/Ioff ratio, minimized Short Channel Effects (SCEs) and hot carrier immunity. Results are simulated using 2D Sentaurus TCAD simulator for validation of the proposed structure.

An analytical model for anomalous threshold voltage behavior of short channel MOSFETs

1997 ◽  
Vol 41 (9) ◽  
pp. 1386-1388 ◽  
Author(s):  
Manoj K. Khanna ◽  
Maneesha ◽  
Ciby Thomas ◽  
R.S. Gupta ◽  
Subhasis Haldar
Keyword(s):  
Analytical Model ◽  
Threshold Voltage ◽  
Short Channel ◽  
Anomalous Threshold

Gate Underlap Design for Short Channel Effects Control in Cylindrical Gate-all-around MOSFETs based on an Analytical Model

2012 ◽  
Vol 29 (1) ◽  
pp. 29 ◽  
Author(s):  
Lining Zhang ◽  
Shaodi Wang ◽  
Chunkai Xu ◽  
Yun Ye ◽  
Mansun Chan ◽  
...  
Keyword(s):  
Analytical Model ◽  
Short Channel Effects ◽  
Short Channel ◽  
Channel Effects ◽  
Gate Underlap

Analytical model of body factor in short channel bulk MOSFETs for low voltage applications

2004 ◽  
Vol 48 (10-11) ◽  
pp. 1763-1766 ◽  
Author(s):  
Anil Kumar ◽  
Toshiharu Nagumo ◽  
Gen Tsutsui ◽  
Toshiro Hiramoto
Keyword(s):  
Analytical Model ◽  
Low Voltage ◽  
Short Channel
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