Indium surface segregation in InGaN/GaN quantum wells

2003 ◽  
Author(s):  
A. Dussaigne ◽  
B. Damilano ◽  
N. Grandjean ◽  
J. Massies
Keyword(s):  
Quantum Wells ◽  
Surface Segregation

Surface segregation of In atoms and its influence on the quantized levels in InGaAs/GaAs quantum wells

1993 ◽  
Vol 127 (1-4) ◽  
pp. 546-549 ◽  
Author(s):  
K. Muraki ◽  
S. Fukatsu ◽  
Y. Shiraki ◽  
R. Ito
Keyword(s):  
Quantum Wells ◽  
Surface Segregation ◽  
Quantized Levels

Analysis of indium surface segregation in molecular beam epitaxy of InGaAs/GaAs quantum wells

1997 ◽  
Vol 117-118 ◽  
pp. 700-704 ◽  
Author(s):  
Koichi Yamaguchi ◽  
Tetsuya Okada ◽  
Fumito Hiwatashi
Keyword(s):  
Molecular Beam Epitaxy ◽  
Quantum Wells ◽  
Molecular Beam ◽  
Surface Segregation

Correlation Between Photoluminescence Spectral Features and Crystal Growth Temperature for Sige Single Quantum Wells

1995 ◽  
Vol 379 ◽  
Author(s):  
M. Gerling ◽  
S. Nilsson ◽  
H. P. Zeindl ◽  
U. Jagdhold
Keyword(s):  
Diffusion Process ◽  
Quantum Wells ◽  
Growth Temperature ◽  
Surface Segregation ◽  
Excitation Power ◽  
Activation Energies ◽  
Photoluminescence Intensity ◽  
Single Quantum ◽  
Different Temperatures ◽  
Site Exchange

ABSTRACTSample temperature dependence and excitation power dependence of the photoluminescence intensity were investigated with respect to growth temperature for SiGe single quantum wells grown pseudomorphically to (100)-oriented Si by molecular beam epitaxy. The determined excitation power exponents and thermal activation energies show unambiguously that defect incorporation is effectively reduced at higher growth temperatures. However, at higher growth temperatures the SiGe-related spectral distribution is found to be shifted to higher photon energy which is attributed to intermixing of Ge and Si at the heterointerfaces, governed by diffusion as well as Ge surface segregation during growth. The diffusion process is studied separately by photoluminescence measurements upon thermal annealing at different temperatures and a diffusion model is presented where the diffusion process is assumed to be composed of two different mechanisms, interdiffusion, i.e. lattice-site-exchange diffusion, and point-defectinduced diffusion. The determined activation energies for the two diffusion mechanisms are in good agreement with previous results which confirm that the model gives a realistic picture of the diffusion process.

Indium surface segregation in strained GaInAs quantum wells grown on (1̄1̄1̄) GaAs substrates by MBE

1999 ◽  
Vol 201-202 ◽  
pp. 284-289 ◽  
Author(s):  
X Marcadet ◽  
A Fily ◽  
S Collin ◽  
J.P Landesman ◽  
M Larive ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Surface Segregation ◽  
Gaas Substrates

Dynamics of Surface Segregation During InGaAs Mbe

1995 ◽  
Vol 379 ◽  
Author(s):  
Keith R. Evans ◽  
R. Kaspi ◽  
J.E. Ehret ◽  
M. Skowronski
Keyword(s):  
Quantum Wells ◽  
Molecular Beam ◽  
Surface Segregation ◽  
Temperature Programmed Desorption ◽  
Molecular Beam Epitaxy Growth ◽  
Ingaas Layer ◽  
Temperature Dependent ◽  
Bottom Interface ◽  
Temperature Programmed

ABSTRACTThe dynamics of In surface segregation during molecular beam epitaxy growth of In.22Ga.78As/GaAs quantum wells (QWs) are studied by temperature-programmed desorption (TPD). The TPD spectra show two In peaks: a low temperature (low-T5) peak and a high temperature (high-T5) peak, which arise from desorption of surface segregated In and dissociation of the underlying InGaAs lattice, respectively. Integration of the low-Ts peak provides quantitative determination of the surface segregated In population ΘIn, as a function of InGaAs layer thickness, incident arsenic dimer flux [(Fi(As2)], InGaAs growth temperature, and GaAs cap thickness. The surface segregated In population ΘIn, is observed to grow with InGaAs thickness, until reaching a temperature-dependent steady state value between 1.0 and 2.0 monolayers after approximately ten monolayers of growth, and then decays during GaAs overlayer growth. The variation of ΘIn with thickness closely mimics the resulting vertical composition profile, which is characterized by an In-depleted bottom interface and segregation of In into the GaAs cap. Based on these results, a sequence of: 1) In predeposition, 2) InGaAs growth, and 3) thermal desorption of Eh is proposed to produce a more square InGaAs/GaAs QW than can be obtained by more standard MBE approaches.

Segregant-Assisted Growth of SiGe/Si Heterostructures and their Optical Properties

1993 ◽  
Vol 318 ◽  
Author(s):  
Y. Shiraki ◽  
S. Fukatsu ◽  
K. Fujita ◽  
T. Usami
Keyword(s):  
Quantum Wells ◽  
Surface Segregation ◽  
Quantum Confinement Effect ◽  
Growth Front ◽  
Band Edge ◽  
High Quality ◽  
Edge Luminescence ◽  
Band Edge Luminescence ◽  
A New Technique ◽  
Strong Segregation

ABSTRACTA method to realize high quality SiGe/Si heterostructures where surface segregation seriously deteriorates the interface integrity is discussed. After clarifying the mechanism of surface segregation, a new technique, called segre-gant-assisted growth (SAG), where atoms having a strong segregation tendency are introduced at heterointerfaces is proposed and its advantages are demonstrated. Intersubband transition of electrons in the conduction band can be clearly observed even in narrow quantum wells (QWs), and the well width dependence reflecting the square shape potential is obtained in the absorption peak energy. Gas source MBE (GSMBE), which is considered to be quasi-SAG with hydrogen generated at the growth front acting as a segregant, is shown to provide high quality SiGe/Si heterostructures with abrupt interfaces. Highly efficient band edge luminescence is observed in the QWs grown by the SAG method, especially by GSMBE, and the quantum confinement effect is confirmed. Electroluminescent diodes providing band edge luminescence are fabricated by this method, suggesting a high potential for SiGe/Si heterostrucutres in device applications.

The effects of both surface segregation of In atoms and strain on the confinement profile of InGaAs/GaAs multi quantum wells

2006 ◽  
Vol 26 (2-3) ◽  
pp. 202-207 ◽  
Author(s):  
F. Smaoui ◽  
L. Mandhour ◽  
M.A. Maaref ◽  
L. Sfaxi ◽  
H. Maaref ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Surface Segregation
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