Control of MBE surface step-edge kinetics to make an atomically smooth quantum well

Author(s):  
M. Yoshita ◽  
Ji-Won Oh ◽  
H. Akiyamat ◽  
L. Pfeiffer ◽  
K.W. Westt
Keyword(s):  
2003 ◽  
Vol 251 (1-4) ◽  
pp. 62-67 ◽  
Author(s):  
Masahiro Yoshita ◽  
Ji-Won Oh ◽  
Hidefumi Akiyama ◽  
Loren N. Pfeiffer ◽  
Ken W. West
Keyword(s):  

2005 ◽  
Vol 290-291 ◽  
pp. 257-260 ◽  
Author(s):  
Alexander B. Shick ◽  
Frantis˘ek Máca ◽  
Peter M. Oppeneer

1995 ◽  
Vol 102 (22) ◽  
pp. 9077-9089 ◽  
Author(s):  
L. Niu ◽  
D. D. Koleske ◽  
D. J. Gaspar ◽  
S. J. Sibener

2004 ◽  
Vol 69 (21) ◽  
Author(s):  
Alexander B. Shick ◽  
František Máca ◽  
Peter M. Oppeneer
Keyword(s):  

2008 ◽  
Vol 602 (13) ◽  
pp. 2284-2294 ◽  
Author(s):  
Yong Han ◽  
Guang-Hong Lu ◽  
Byeong-Joo Lee ◽  
Feng Liu

AIP Advances ◽  
2021 ◽  
Vol 11 (9) ◽  
pp. 095014
Author(s):  
Yue-Ying Niu ◽  
Chen-Rui Wang ◽  
Qian-Qian Yuan ◽  
Cheng-Long Xue ◽  
Li-Guo Dou ◽  
...  
Keyword(s):  

2012 ◽  
Vol 717-720 ◽  
pp. 581-584 ◽  
Author(s):  
Kouji Inagaki ◽  
Bui Van Pho ◽  
Kazuto Yamauchi ◽  
Yoshitada Morikawa

It has been reported that SiC surface can be etched off in a concentrated aqueous solution of hydrogen fluoride with making contacts with Pt plate catalyst, named Catalyst-referred Etching (CARE) [1]. In this report, we present first-principles molecular-dynamic simulations on the initial stage of the etching process. Reaction barrier heights of dissociative absorption reactions of hydrogen fluoride molecule breaking into back-bonds at step edge of 3C-SiC(111) are analyzed.


2004 ◽  
Vol 70 (10) ◽  
Author(s):  
B. Újfalussy ◽  
B. Lazarovits ◽  
L. Szunyogh ◽  
G. M. Stocks ◽  
P. Weinberger
Keyword(s):  

2016 ◽  
Vol 116 (17) ◽  
Author(s):  
Xiang-Bing Li ◽  
Wen-Kai Huang ◽  
Yang-Yang Lv ◽  
Kai-Wen Zhang ◽  
Chao-Long Yang ◽  
...  

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