Variation of Relative Intensity Noise With Optical Power in InGaAsP Semiconductor Optical Amplifier

2012 ◽  
Vol 24 (22) ◽  
pp. 2049-2051 ◽  
Author(s):  
M. Yamada ◽  
N. Takeuchi ◽  
K. Sakumoto ◽  
Y. Kuwamura
Keyword(s):  
Relative Intensity ◽  
Semiconductor Optical Amplifier ◽  
Optical Power ◽  
Optical Amplifier ◽  
Relative Intensity Noise ◽  
Intensity Noise

scholarly journals Intensity noise characteristics of intracavity contacted VCSELs with rhomboidal oxide current aperture for the magnetometric sensor with Cs133 vapor cell used in magnetoencephalography

2021 ◽  
Vol 2103 (1) ◽  
pp. 012182
Author(s):  
M A Bobrov ◽  
S A Blokhin ◽  
N A Maleev ◽  
A A Blokhin ◽  
A P Vasyl’ev ◽  
...  
Keyword(s):  
Magnetic Resonance ◽  
Relative Intensity ◽  
Optical Power ◽  
Relative Intensity Noise ◽  
Cavity Surface ◽  
Intensity Noise ◽  
Noise Characteristics ◽  
Vertical Cavity Surface ◽  
Emitting Lasers ◽  
Noise Characterization

Abstract We demonstrate noise characterization of novel 894.4 nm vertical-cavity surface emitting lasers with intracavity contacts and a rhomboidal oxide current aperture (IC-VCSELs), dedicated to 133Cs D1 line compact optically pumped atomic magnetometers (OPM). The laser relative intensity noise, measured to be -139 dB/Hz at 10 kHz frequency in 1 Hz bandwidth for a laser optical power of 0.8 mW, is decreased with optical power growth. The IC-VCSELs polarization-resolved relative intensity noise is 143 dB/Hz at 10 kHz frequency in 1 Hz bandwidth for 0.8 mW. The emission linewidth of the VCSEL is about 55 MHz. The IC-VCSEL parameters are determined, such as emission linewidth ~ 50-60 MHz, optical power ~ 0.5-1.0 mW, at which the polarization-resolved RIN becomes close to the RIN, which makes it possible to use these lasers in various OPM Mz and Mx schemes. The ultimate sensitivity of OPM was estimated by the ratio of the magnetic resonance to the signal to noise level. It is shown that a OPM based on the IC-VCSELs, assuming magnetic resonance FWHM ~ 1 kHz, can achieve a shot noise-limited sensitivity around 20 fT in 1 Hz bandwidth without any polarization improvements by polarizer or polarization beam splitter cube (PBC). Developed IC-VCSELs is acceptable for use in compact OPM for magnetoencephalography.

Frequency Encoded All Optical Tri-state Logic Gates NOT and NAND Using Semiconductor Optical Amplifier Based Interferometric Switches

2020 ◽  
Vol 10 (4) ◽  
pp. 369-380
Author(s):  
K. Maji ◽  
K. Mukherjee ◽  
A. Raja
Keyword(s):  
Semiconductor Optical Amplifier ◽  
Extinction Ratio ◽  
Optical Power ◽  
Logic Gates ◽  
Optical Amplifier ◽  
All Optical ◽  
State Frequency ◽  
Spontaneous Noise ◽  
First Time ◽  
Practical Feasibility

All optical tri-state frequency encoded logic gates NOT and NAND are proposed and numerically investigated using TOAD based interferometric switch for the first time to the best of our knowledge. The optical power spectrum, extinction ratio, contrast ration, and amplified spontaneous noise are calculated to analyze and confirm practical feasibility of the gates. The proposed device works for low switching energy and has high contrast and extinction ratio as indicated in this work.

Coherently Combined DFB Laser Array Chip with Reduced Relative Intensity Noise

2021 ◽  
pp. 1-1
Author(s):  
Xiaoyang She ◽  
Bing Xiong ◽  
Changzheng Sun ◽  
Zhibiao Hao ◽  
Jian Wang ◽  
...  
Keyword(s):  
Relative Intensity ◽  
Relative Intensity Noise ◽  
Intensity Noise ◽  
Laser Array ◽  
Dfb Laser
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