Temperature-Dependent Characteristics of Single-Mode InAs Submonolayer Quantum-Dot Lasers

2012 ◽  
Vol 24 (11) ◽  
pp. 906-908 ◽  
Author(s):  
Dejan Arsenijevic ◽  
Chongyang Liu ◽  
Alexey Payusov ◽  
Mirko Stubenrauch ◽  
Dieter Bimberg
Keyword(s):  
Quantum Dot ◽  
Single Mode ◽  
Quantum Dot Lasers ◽  
Temperature Dependent

Degradation-robust single mode continuous wave operation of 1.46μm metamorphic quantum dot lasers on GaAs substrate

2006 ◽  
Vol 89 (4) ◽  
pp. 041113 ◽  
Author(s):  
T. Kettler ◽  
L. Ya. Karachinsky ◽  
N. N. Ledentsov ◽  
V. A. Shchukin ◽  
G. Fiol ◽  
...  
Keyword(s):  
Quantum Dot ◽  
Gaas Substrate ◽  
Continuous Wave ◽  
Single Mode ◽  
Quantum Dot Lasers ◽  
Continuous Wave Operation

Optically Injected Single-Mode Quantum Dot Lasers

2012 ◽  
pp. 1-22 ◽  
Author(s):  
B. Kelleher ◽  
D. Goulding ◽  
S. P. Hegarty ◽  
G. Huyet ◽  
E. A. Viktorov ◽  
...  
Keyword(s):  
Quantum Dot ◽  
Single Mode ◽  
Quantum Dot Lasers

Comparison of Lasing Characteristics of GaInNAs Quantum Dot Lasers and GaInNAs Quantum Well Lasers

2005 ◽  
Vol 891 ◽  
Author(s):  
Chongyang Y. Liu ◽  
Soon Fatt Yoon ◽  
Zhongzhe Z. Sun
Keyword(s):  
Quantum Dot ◽  
Quantum Well ◽  
Molecular Beam ◽  
Cavity Length ◽  
Characteristic Temperature ◽  
Single Layer ◽  
Quantum Dot Lasers ◽  
Temperature Dependent ◽  
Single Quantum Well ◽  
High Temperature Operation

ABSTRACTSelf-assembled GaInNAs/GaAsN single layer quantum dot (QD) lasers grown using solid source molecular beam epitaxy have been fabricated and characterized. Temperature-dependent measurements have been carried out on the GaInNAs QD lasers. High-temperature operation up to 65°C was demonstrated from an unbonded GaInNAs QD laser (50 × 1060 μm2), with high characteristic temperature (T0) of 79.4 K in the temperature range of 10-60°C. For comparison, temperature-dependent operation has also been studied on the GaInNAs single quantum well (SQW) lasers. Unlike the relation between the cavity length and T0 in GaInNAs SQW lasers, longer-cavity GaInNAs QD laser (50 × 1700 μm2) showed lower T0 of 65.1 K, which is presumably believed due to the nonuniformity of the GaInNAs QD layer.

Temperature-Dependent Gain and Threshold in P-Doped Quantum Dot Lasers

2007 ◽  
Vol 13 (5) ◽  
pp. 1261-1266 ◽  
Author(s):  
Peter M. Smowton ◽  
Ian C. Sandall ◽  
David J. Mowbray ◽  
Hui Yun Liu ◽  
Mark Hopkinson
Keyword(s):  
Quantum Dot ◽  
Quantum Dot Lasers ◽  
Temperature Dependent
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