A 92 GHz Bandwidth Distributed Amplifier in a 45 nm SOI CMOS Technology

2011 ◽  
Vol 21 (6) ◽  
pp. 329-331 ◽  
Author(s):  
Joohwa Kim ◽  
James F. Buckwalter
Keyword(s):  
Cmos Technology ◽  
Distributed Amplifier ◽  
Soi Cmos

A band selected 3.1-30.1 GHz distributed amplifier in 0.18-μm CMOS technology

2011 ◽  
Vol 53 (8) ◽  
pp. 1850-1853
Author(s):  
Wu-Shiung Feng ◽  
Chien-Cheng Wei ◽  
Hui-Chen Hsu ◽  
Chia-Hsun Chen ◽  
Prasenjit Chatterjee ◽  
...  
Keyword(s):  
Cmos Technology ◽  
Distributed Amplifier

A 28Gb/s 4-tap FFE/15-tap DFE serial link transceiver in 32nm SOI CMOS technology

2012 ◽  
Author(s):  
John Bulzacchelli ◽  
Troy Beukema ◽  
Daniel Storaska ◽  
Ping-Hsuan Hsieh ◽  
Sergey Rylov ◽  
...  
Keyword(s):  
Cmos Technology ◽  
Serial Link ◽  
Serial Link Transceiver ◽  
Soi Cmos

scholarly journals Resonant Body Transistors in IBM's 32 nm SOI CMOS Technology

2014 ◽  
Vol 23 (3) ◽  
pp. 636-650 ◽  
Author(s):  
Radhika Marathe ◽  
Bichoy Bahr ◽  
Wentao Wang ◽  
Zohaib Mahmood ◽  
Luca Daniel ◽  
...  
Keyword(s):  
Cmos Technology ◽  
Soi Cmos

A 31 GHz body-biased configurable power amplifier in 28 nm FD-SOI CMOS for 5 G applications

2020 ◽  
pp. 1-18
Author(s):  
Florent Torres ◽  
Eric Kerhervé ◽  
Andreia Cathelin ◽  
Magali De Matos
Keyword(s):  
Power Amplifier ◽  
Complementary Metal Oxide Semiconductor ◽  
Cmos Technology ◽  
Silicon On Insulator ◽  
Oxide Semiconductor ◽  
Fully Depleted ◽  
Technology Roadmap ◽  
Wide Range ◽  
28 Nm ◽  
Soi Cmos

Abstract This paper presents a 31 GHz integrated power amplifier (PA) in 28 nm Fully Depleted Silicon-On-Insulator Complementary Metal Oxide Semiconductor (FD-SOI CMOS) technology and targeting SoC implementation for 5 G applications. Fine-grain wide range power control with more than 10 dB tuning range is enabled by body biasing feature while the design improves voltage standing wave ratio (VSWR) robustness, stability and reverse isolation by using optimized 90° hybrid couplers and capacitive neutralization on both stages. Maximum power gain of 32.6 dB, PAEmax of 25.5% and Psat of 17.9 dBm are measured while robustness to industrial temperature range and process spread is demonstrated. Temperature-induced performance variation compensation, as well as amplitude-to-phase modulation (AM-PM) optimization regarding output power back-off, are achieved through body-bias node. This PA exhibits an International Technology Roadmap for Semiconductors figure of merit (ITRS FOM) of 26 925, the highest reported around 30 GHz to authors' knowledge.

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