Trap Detector - for Measurement of Pulse Energy Laser Radiation

2006 ◽  
Author(s):  
A. J. Krasnogorov ◽  
Yu. P. Machekhin
Keyword(s):  
Laser Radiation ◽  
Pulse Energy ◽  
Trap Detector ◽  
Energy Laser

scholarly journals Wide field intravital imaging by two-photon-excitation digital-scanned light-sheet microscopy (2p-DSLM) with a high-pulse energy laser

2014 ◽  
Vol 5 (10) ◽  
pp. 3311 ◽  
Author(s):  
Atsushi Maruyama ◽  
Yusuke Oshima ◽  
Hiroko Kajiura-Kobayashi ◽  
Shigenori Nonaka ◽  
Takeshi Imamura ◽  
...  
Keyword(s):  
Pulse Energy ◽  
Light Sheet ◽  
Intravital Imaging ◽  
Wide Field ◽  
High Pulse Energy ◽  
Two Photon ◽  
Light Sheet Microscopy ◽  
Photon Excitation ◽  
High Pulse ◽  
Energy Laser

scholarly journals Temperature dependencies of thin-wire platinum bolometer of high power laser radiation

2018 ◽  
Vol 1 (2) ◽  
Author(s):  
Stanislav Victorovich Pogorelov
Keyword(s):  
Laser Radiation ◽  
Temperature Dependence ◽  
High Power ◽  
Pulse Energy ◽  
Thin Wire ◽  
High Power Laser ◽  
Power Laser ◽  
Different Temperatures ◽  
Continuous Power ◽  
High Power Laser Radiation

The resistance of platinum filament on heating to different temperatures have been measured. Measurements showed platinum wire resistivity matching to tabulated values, and therefore can be used to obtain the temperature dependence of conductors used in bolometric measurers of radiation.The results obtained make it possible to createabsolute bolometricmeasurer of continuous power and pulse energy of laser radiation.

scholarly journals Semiconductor Physics, Quantum Electronics & Optoelectronics, 23 (1), P. 71-74 (2020). DOI: https://doi.org/10.15407/spqeo23.01.071 Pyroelectric USB-joulemeters of pulsed laser radiation V.B. Samoylov, L.V. Levash, O.A. Rosnovskiy, M.Yu. Vedula, V.S. Rad'ko Institute of Physics, NAS of Ukraine, 46, prospect Nauky, 03680 Kyiv, Ukraine E-mail: [email protected] Abstract. The general arrangement, principle of operation and basic parameters of pyroelectric USB-meters of energy of pulsed laser radiation have been described. A smart head of the meter converts the signal from the pyroelectric sensor and immediately transfers it to PC using a high-speed USB 2.0 connection. The device consists of two circuit panels located in the common package. The pyroelectric sensitive element and preamplifier are mounted on the sensor panel. Output of the preamplifier is connected with input of the preliminary digital processing panel. The meter is connected with host computer that performs further processing, storage and monitoring of data. Sensor panel can be produced in two modifications, dependently on the pulse energy. Sensitive elements on the base of LiNbO3 or LiTaO3 with absorbing coatings are used for measuring the low-energy pulses, whereas the transparent sensitive elements with a small intrinsic absorption is used for measurements of high-energy radiation pulses. The pulse rate and pulse energy can vary from single pulses up to 2 kHz and from 0.1 μJ up to 0.5 J, respectively. Keywords: laser, impulse radiation, joulemeter, detector, pyroelectric. Full Text (PDF) Back to Volume 23 N1 Creative Commons License This work is licensed under a Creative Commons Attribution-NoDerivatives 4.0 International License.

2020 ◽  
Vol 23 (1) ◽  
pp. 71-74
Author(s):  
V.B. Samoylov ◽  
◽  
L.V. Levash ◽  
O.A. Rosnovskiy ◽  
M.Yu. Vedula ◽  
...  
Keyword(s):  
Laser Radiation ◽  
Pulse Energy ◽  
High Speed ◽  
Pulsed Laser ◽  
Digital Processing ◽  
High Energy ◽  
Pulsed Laser Radiation ◽  
Semiconductor Physics ◽  
Creative Commons ◽  
Laser Impulse

Influence of Laser Radiation on Movement of Dislocations in Silicon Single Crystals

2021 ◽  
Vol 410 ◽  
pp. 742-747
Author(s):  
Alexander A. Solovyev ◽  
Vladislav V. Rybin
Keyword(s):  
Laser Radiation ◽  
Energy Density ◽  
Laser Pulse ◽  
Pulse Energy ◽  
Acoustic Waves ◽  
Surface Defects ◽  
Linear Defects ◽  
Semiconductor Crystals ◽  
Micro Cracks ◽  
P Type

The behavior of linear defects in n-and p-type silicon, generated by laser radiation is studied for pulse energy density 417 – 1083 mJ/cm2. The features of the nondestructive and destructive effects of the laser pulse on the surface defects formation of the semiconductor crystals are revealed. The formation and movement of dislocations in the crater region and the development of micro cracks, accompanied by acoustic waves are revealed.

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