Symmetry Control of Wavelength-scale Light Emitters

2006 ◽  
Author(s):  
Sun-kyung Kim ◽  
Se-heon Kim ◽  
Yong-hee Lee
Keyword(s):  
Light Emitters ◽  
Wavelength Scale

ZnCdO/ZnMgO and ZnO/AlGaN Heterostructures for UV and Visible Light Emitters

2005 ◽  
Vol 892 ◽  
Author(s):  
Andrei Osinsky ◽  
Jianwei Dong ◽  
J. Q. Xie ◽  
B. Hertog ◽  
A. M. Dabiran ◽  
...  
Keyword(s):  
Molecular Beam ◽  
Compositional Analysis ◽  
Optical Emission ◽  
Rf Plasma ◽  
Light Emitters ◽  
Time Resolved ◽  
Light Emitting ◽  
Spatially Resolved ◽  
Time Resolved Photoluminescence ◽  
Made In

AbstractThis paper reviews of some of the progress made in the development of ZnO-based light emitting diodes (LEDs). n-ZnO/p-AlGaN-based heterostructures have been successfully for the fabrication of UV emitting LEDs that have operated at temperatures up to 650K, suggesting an excitonic origin for the optical transitions. RF-plasma-assisted molecular beam epitaxy has been used to grow epitaxial CdxZn1-xO films on GaN/sapphire structure. These films have a single-crystal wurtzite structure as demonstrated by structural and compositional analysis. High quality CdxZn1-xO films were grown with up to x=0.78 mole fraction as determined by RBS and SIMS techniques. Optical emission ranging from purple (Cd0.05Zn0.95O) to yellow (Cd0.29Zn0.71O) was observed. Compositional fluctuations in a Cd0.16Zn0.84O films were not detected by spatially resolved CL measurements, although intensity fluctuation with features of ∼0.5 μm diameter were seen on the intensity maps. Time resolved photoluminescence shows multi-exponential decay with 21 psec. and 49±3 psec. lifetimes, suggesting that composition micro-fluctuations may be present in Cd0.16Zn0.84O film.

scholarly journals Observing and controlling a Tamm plasmon at the interface with a metasurface

Nanophotonics ◽  
2020 ◽  
Vol 9 (4) ◽  
pp. 897-903 ◽  
Author(s):  
Oleksandr Buchnev ◽  
Alexandr Belosludtsev ◽  
Victor Reshetnyak ◽  
Dean R. Evans ◽  
Vassili A. Fedotov
Keyword(s):  
Liquid Crystal ◽  
Metal Film ◽  
Near Infrared ◽  
Thin Metal Film ◽  
Outer Side ◽  
Spectral Position ◽  
External Perturbations ◽  
Dielectric Mirror ◽  
Wavelength Scale ◽  
Sub Wavelength

AbstractWe demonstrate experimentally that Tamm plasmons in the near infrared can be supported by a dielectric mirror interfaced with a metasurface, a discontinuous thin metal film periodically patterned on the sub-wavelength scale. More crucially, not only do Tamm plasmons survive the nanopatterning of the metal film but they also become sensitive to external perturbations as a result. In particular, by depositing a nematic liquid crystal on the outer side of the metasurface, we were able to red shift the spectral position of Tamm plasmon by 35 nm, while electrical switching of the liquid crystal enabled us to tune the wavelength of this notoriously inert excitation within a 10-nm range.

scholarly journals Ultra-high-Q resonances in plasmonic metasurfaces

2021 ◽  
Vol 12 (1) ◽  
Author(s):  
M. Saad Bin-Alam ◽  
Orad Reshef ◽  
Yaryna Mamchur ◽  
M. Zahirul Alam ◽  
Graham Carlow ◽  
...  
Keyword(s):  
Incident Light ◽  
Reducing Power ◽  
Field Enhancement ◽  
Plasmonic Nanostructures ◽  
High Q ◽  
Alternative Material ◽  
Order Of Magnitude ◽  
Wavelength Scale ◽  
Strong Confinement ◽  
Sub Wavelength

AbstractPlasmonic nanostructures hold promise for the realization of ultra-thin sub-wavelength devices, reducing power operating thresholds and enabling nonlinear optical functionality in metasurfaces. However, this promise is substantially undercut by absorption introduced by resistive losses, causing the metasurface community to turn away from plasmonics in favour of alternative material platforms (e.g., dielectrics) that provide weaker field enhancement, but more tolerable losses. Here, we report a plasmonic metasurface with a quality-factor (Q-factor) of 2340 in the telecommunication C band by exploiting surface lattice resonances (SLRs), exceeding the record by an order of magnitude. Additionally, we show that SLRs retain many of the same benefits as localized plasmonic resonances, such as field enhancement and strong confinement of light along the metal surface. Our results demonstrate that SLRs provide an exciting and unexplored method to tailor incident light fields, and could pave the way to flexible wavelength-scale devices for any optical resonating application.

scholarly journals Role of dislocations in nitride laser diodes with different indium content

2021 ◽  
Vol 11 (1) ◽  
Author(s):  
Agata Bojarska-Cieślińska ◽  
Łucja Marona ◽  
Julita Smalc-Koziorowska ◽  
Szymon Grzanka ◽  
Jan Weyher ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Defect Density ◽  
Laser Diodes ◽  
Diffusion Path ◽  
Vapour Phase ◽  
Indium Content ◽  
Nonradiative Recombination ◽  
Light Emitters ◽  
Vapour Phase Epitaxy

AbstractIn this work we investigate the role of threading dislocations in nitride light emitters with different indium composition. We compare the properties of laser diodes grown on the low defect density GaN substrate with their counterparts grown on sapphire substrate in the same epitaxial process. All structures were produced by metalorganic vapour phase epitaxy and emit light in the range 383–477 nm. We observe that intensity of electroluminescence is strong in the whole spectral region for devices grown on GaN, but decreases rapidly for the devices on sapphire and emitting at wavelength shorter than 420 nm. We interpret this behaviour in terms of increasing importance of dislocation related nonradiative recombination for low indium content structures. Our studies show that edge dislocations are the main source of nonradiative recombination. We observe that long wavelength emitting structures are characterized by higher average light intensity in cathodoluminescence and better thermal stability. These findings indicate that diffusion path of carriers in these samples is shorter, limiting the amount of carriers reaching nonradiative recombination centers. According to TEM images only mixed dislocations open into the V-pits, usually above the multi quantum wells thus not influencing directly the emission.

scholarly journals In-Plane Monolithic Integration of Scaled III-V Photonic Devices

2021 ◽  
Vol 11 (4) ◽  
pp. 1887
Author(s):  
Markus Scherrer ◽  
Noelia Vico Triviño ◽  
Svenja Mauthe ◽  
Preksha Tiwari ◽  
Heinz Schmid ◽  
...  
Keyword(s):  
Integrated Circuits ◽  
High Speed ◽  
Low Cost ◽  
Photonic Devices ◽  
Monolithic Integration ◽  
Light Emitters ◽  
Fully Integrated ◽  
Large Lattice ◽  
Hybrid Iii ◽  
Gain Material

It is a long-standing goal to leverage silicon photonics through the combination of a low-cost advanced silicon platform with III-V-based active gain material. The monolithic integration of the III-V material is ultimately desirable for scalable integrated circuits but inherently challenging due to the large lattice and thermal mismatch with Si. Here, we briefly review different approaches to monolithic III-V integration while focusing on discussing the results achieved using an integration technique called template-assisted selective epitaxy (TASE), which provides some unique opportunities compared to existing state-of-the-art approaches. This method relies on the selective replacement of a prepatterned silicon structure with III-V material and thereby achieves the self-aligned in-plane monolithic integration of III-Vs on silicon. In our group, we have realized several embodiments of TASE for different applications; here, we will focus specifically on in-plane integrated photonic structures due to the ease with which these can be coupled to SOI waveguides and the inherent in-plane doping orientation, which is beneficial to waveguide-coupled architectures. In particular, we will discuss light emitters based on hybrid III-V/Si photonic crystal structures and high-speed InGaAs detectors, both covering the entire telecom wavelength spectral range. This opens a new path towards the realization of fully integrated, densely packed, and scalable photonic integrated circuits.

Strong Optical Confinements inside The Wavelength-size Metal Mirror Microcavities: — New Concept for Small Light Emitters using InAsSb QDs Microcavities

2007 ◽  
Author(s):  
Akio Ueta ◽  
Sin-ichiro Gozu ◽  
Kouichi Akahane ◽  
Naokatsu Yamamoto ◽  
Masahiro Tsuchiya ◽  
...  
Keyword(s):  
Light Emitters
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