Simulation of all-optical demultiplexing utilizing two-photon absorption in semiconductor devices for high-speed OTDM networks

2004 ◽  
Author(s):  
P.J. Maguire ◽  
L.P. Barry
Keyword(s):  
High Speed ◽  
Semiconductor Devices ◽  
Photon Absorption ◽  
Two Photon Absorption ◽  
Two Photon ◽  
All Optical

Simulation of a high-speed demultiplexer based on two-photon absorption in semiconductor devices

2005 ◽  
Vol 249 (4-6) ◽  
pp. 415-420 ◽  
Author(s):  
P.J. Maguire ◽  
L.P. Barry ◽  
T. Krug ◽  
M. Lynch ◽  
A.L. Bradley ◽  
...  
Keyword(s):  
High Speed ◽  
Semiconductor Devices ◽  
Photon Absorption ◽  
Two Photon Absorption ◽  
Two Photon

All-optical sampling based on two-photon absorption in a semiconductor microcavity for high-speed OTDM

2005 ◽  
Author(s):  
P. J. Maguire ◽  
L. P. Barry ◽  
T. Krug ◽  
M. Lynch ◽  
A. L. Bradley ◽  
...  
Keyword(s):  
High Speed ◽  
Photon Absorption ◽  
Two Photon Absorption ◽  
Two Photon ◽  
Optical Sampling ◽  
All Optical ◽  
Semiconductor Microcavity

Ultra-sensitive all-optical sampling at 1.5 [micro sign]m using waveguide two-photon absorption

1999 ◽  
Vol 35 (17) ◽  
pp. 1483 ◽  
Author(s):  
B.C. Thomsen ◽  
L.P. Barry ◽  
J.M. Dudley ◽  
J.D. Harvey
Keyword(s):  
Photon Absorption ◽  
Two Photon Absorption ◽  
Two Photon ◽  
Optical Sampling ◽  
All Optical

scholarly journals Ultrafast sub–30-fs all-optical switching based on gallium phosphide

2019 ◽  
Vol 5 (6) ◽  
pp. eaaw3262 ◽  
Author(s):  
Gustavo Grinblat ◽  
Michael P. Nielsen ◽  
Paul Dichtl ◽  
Yi Li ◽  
Rupert F. Oulton ◽  
...  
Keyword(s):  
Gallium Phosphide ◽  
Optical Switching ◽  
Near Infrared ◽  
Optical Nonlinearity ◽  
Photon Absorption ◽  
Linear Absorption ◽  
Two Photon Absorption ◽  
Two Photon ◽  
All Optical ◽  
All Optical Switching

Gallium phosphide (GaP) is one of the few available materials with strong optical nonlinearity and negligible losses in the visible (λ > 450 nm) and near-infrared regime. In this work, we demonstrate that a GaP film can generate sub–30-fs (full width at half maximum) transmission modulation of up to ~70% in the 600- to 1000-nm wavelength range. Nonlinear simulations using parameters measured by theZ-scan approach indicate that the transmission modulation arises from the optical Kerr effect and two-photon absorption. Because of the absence of linear absorption, no slower free-carrier contribution is detected. These findings place GaP as a promising ultrafast material for all-optical switching at modulation speeds of up to 20 THz.

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