Low-voltage surface-normal InGaAsP/InP modulator for optical interconnects

2004 ◽  
Author(s):  
N.C. Helman ◽  
J.E. Roth ◽  
J. Altug ◽  
D.A.B. Miller ◽  
D.P. Bour
Keyword(s):  
Optical Interconnects ◽  
Low Voltage ◽  
Surface Normal

Misalignment-tolerant surface-normal low-voltage modulator for optical interconnects

2005 ◽  
Vol 11 (2) ◽  
pp. 338-342 ◽  
Author(s):  
N.C. Helman ◽  
J.E. Roth ◽  
D.P. Bour ◽  
H. Altug ◽  
D.A.B. Miller
Keyword(s):  
Optical Interconnects ◽  
Low Voltage ◽  
Surface Normal

1‐to‐12 surface normal three‐dimensional optical interconnects

1993 ◽  
Vol 63 (14) ◽  
pp. 1883-1885 ◽  
Author(s):  
Ray T. Chen ◽  
Suning Tang ◽  
Maggie M. Li ◽  
David Gerald ◽  
Srikanth Natarajan
Keyword(s):  
Optical Interconnects ◽  
Three Dimensional ◽  
Surface Normal

Low-Voltage, Coupled Multiple Quantum Well Electroreflective Modulators Towards Ultralow Power Inter-Chip Optical Interconnects

2020 ◽  
Vol 38 (13) ◽  
pp. 3414-3421
Author(s):  
Xiaoxin Wang ◽  
Shaoliang Yu ◽  
Jun Qin ◽  
Alejandra Cuervo-Covian ◽  
Haijie Zuo ◽  
...  
Keyword(s):  
Quantum Well ◽  
Optical Interconnects ◽  
Low Voltage ◽  
Multiple Quantum Well ◽  
Multiple Quantum ◽  
Ultralow Power

Shrinkage-corrected volume holograms based on photopolymeric phase media for surface-normal optical interconnects

1997 ◽  
Vol 71 (11) ◽  
pp. 1464-1466 ◽  
Author(s):  
Chunhe Zhao ◽  
Jian Liu ◽  
Zhenhai Fu ◽  
Ray T. Chen
Keyword(s):  
Optical Interconnects ◽  
Volume Holograms ◽  
Surface Normal

Angular limitations of polymer‐based waveguide holograms for 1‐to‐many V‐shaped surface‐normal optical interconnects

1994 ◽  
Vol 65 (9) ◽  
pp. 1070-1072 ◽  
Author(s):  
Maggie M. Li ◽  
Ray T. Chen ◽  
Suning Tang ◽  
Dave Gerold
Keyword(s):  
Optical Interconnects ◽  
Shaped Surface ◽  
Surface Normal

scholarly journals Electrical TCAD Study of the Low-Voltage Avalanche-Mode Superjunction LED

2021 ◽  
Author(s):  
Raymond Hueting ◽  
Satadal Dutta ◽  
Hidde de Vries ◽  
Anne-Johan Annema
Keyword(s):  
Optical Interconnects ◽  
Low Voltage ◽  
Light Emitting Diode ◽  
Reducing Power ◽  
Constant Field ◽  
Uniform Field ◽  
Charge Balance ◽  
Light Emitting ◽  
Balance Condition ◽  
Tcad Simulation

The CMOS silicon avalanche-mode light-emitting diode (AMLED) has emerged as a potential light source for monolithic optical interconnects. Earlier we presented a superjunction light-emitting diode (SJLED) that offers a higher electroluminescent intensity compared to a conventional AMLED because of its more uniform field distribution. However, for reducing power consumption low-voltage (< 15V) SJLEDs are desired, not explored before. In this work we present a TCAD simulation feasibility study of the low-voltage SJLED for various doping concentrations and device dimensions. The results show that for obtaining a constant field, approximately a ten-fold more aggressive charge balance condition in the SJLED is estimated than traditionally reported. This is important for establishing a guideline to realize optimized RESURF and SJLEDs in the ever-shrinking advanced CMOS nodes.

scholarly journals Electrical TCAD Study of the Low-Voltage Avalanche-Mode Superjunction LED

2021 ◽  
Author(s):  
Raymond Hueting ◽  
Satadal Dutta ◽  
Hidde de Vries ◽  
Anne-Johan Annema
Keyword(s):  
Optical Interconnects ◽  
Low Voltage ◽  
Light Emitting Diode ◽  
Reducing Power ◽  
Constant Field ◽  
Uniform Field ◽  
Charge Balance ◽  
Light Emitting ◽  
Balance Condition ◽  
Tcad Simulation

The CMOS silicon avalanche-mode light-emitting diode (AMLED) has emerged as a potential light source for monolithic optical interconnects. Earlier we presented a superjunction light-emitting diode (SJLED) that offers a higher electroluminescent intensity compared to a conventional AMLED because of its more uniform field distribution. However, for reducing power consumption low-voltage (< 15V) SJLEDs are desired, not explored before. In this work we present a TCAD simulation feasibility study of the low-voltage SJLED for various doping concentrations and device dimensions. The results show that for obtaining a constant field, approximately a ten-fold more aggressive charge balance condition in the SJLED is estimated than traditionally reported. This is important for establishing a guideline to realize optimized RESURF and SJLEDs in the ever-shrinking advanced CMOS nodes.

Sign in / Sign up

Export Citation Format

Share Document