1W output power from a 10 μm aperture 940 nm-laser diode with a RISAS-structure

2002 ◽  
Author(s):  
J. Sebastian ◽  
F. Bugge ◽  
G. Erbert ◽  
H. Wenzel ◽  
W. John ◽  
...  
Keyword(s):  
Output Power ◽  
Laser Diode

Output Power Characteristics of the Laser-diode-pumped Quasi-three-level 914 nm-Nd:YVO$_{4}$ Laser

2015 ◽  
Vol 65 (2) ◽  
pp. 188-193
Author(s):  
Han Tae CHOO* ◽  
Gyu Ug KIM ◽  
Cha Gon PARK ◽  
Kun Hee RHYEE
Keyword(s):  
Output Power ◽  
Laser Diode ◽  
Power Characteristics ◽  
Diode Pumped

Output Power Characteristics of the Laser Diode-end-pumped cw Nd:GdVO$_4$ Laser Operating at 1.34

2012 ◽  
Vol 62 (2) ◽  
pp. 148-154
Author(s):  
Han-Tae CHOO* ◽  
Cha-Gon PARK ◽  
Gyu-Ug KIM ◽  
Sung-Wug BYEN
Keyword(s):  
Output Power ◽  
Laser Diode ◽  
Power Characteristics

Performance Study of a GaAs Based Laser Diode Chip in a Condensing Environment

2009 ◽  
Author(s):  
Sushma Madduri ◽  
Bahgat G. Sammakia ◽  
William Infantolino ◽  
Satish C. Chaparala ◽  
Lawrence C. Hughes ◽  
...  
Keyword(s):  
Output Power ◽  
Laser Diode ◽  
Laser Diodes ◽  
Accelerated Aging ◽  
Climatic Conditions ◽  
Laser Output ◽  
Laser Output Power ◽  
Stress Tests ◽  
Performance Study ◽  
Aerospace Material

This paper presents a performance study done on semiconductor laser diodes in a moisture condensing environment. Devices with laser diodes are used in a wide variety of electronic applications and in various climatic conditions. The motivation behind this study is a common environmental exposure, where a device using a laser diode is brought into a relatively humid environment (a building) from a cold, outside environment. Under such conditions, condensation occurs on various components of the device, including the diode, and could affect the laser output power. Reliability of the device is a critical concern since the laser diode and the lens are susceptible to failure due to such repetitive condensation conditions. The test vehicle chosen for this study was a 980nm laser diode. These are used in products for a broad range of markets, including data communications, aerospace, material processing, scientific and defense industries [1–3]. These products may be used in environmental conditions that could result in condensation within the product. A hermetic package could address this concern, but it is an expensive option. Nonhermetic packaging for the laser component could help lower the cost of these devices; however reliability is a potential concern. Prior research on laser diodes consists of various reliability measurements on 980nm lasers using stress tests (e.g. accelerated aging tests; thermal cycling tests) [3–6]. Reliability analysis of laser diodes specifically addressing condensation measurements has not been previously reported. A Military Standard Specification [MIL-STD-883E Method 1004.7] titled, ‘Moisture resistance test’ was used to conduct this reliability study [10]. An experimental setup was designed and fabricated. A photonic package with a 980nm laser diode was subjected to repetitive condensing cycles and laser output power was recorded as a function of time, temperature and humidity. The variation in laser output power due to condensation was observed and quantified. The focus of this paper is on performance degradation of the laser diode. The possible mechanisms for this degradation are currently being investigated.

The First Nitride Laser Diode on Silicon Carbide

1997 ◽  
Vol 482 ◽  
Author(s):  
J. D. Brown ◽  
J. T. Swindell ◽  
M. A. L. Johnson ◽  
Zhonghai Yu ◽  
J. F. Schetzina ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Output Power ◽  
Laser Diode ◽  
Light Output ◽  
Spectral Emission ◽  
Light Output Power ◽  
Polarization Measurements ◽  
Nitride Laser

AbstractThis paper reports the events at NCSU leading up to and including those of June 5, 1997 which produced the first demonstration of a nitride laser diode on silicon carbide – and the very first nitride laser demonstration outside of Japan. All of the laser diode samples tested at NCSU were designed, grown, and fabricated into cleaved cavity test structures at Cree Research. Laser testing at NCSU consisted of spectral emission versus current measurements, light output power versus current (L-I) measurement, and light output polarization measurements versus current. The first successful laser on silicon carbide emitted at 402.6 nm. Subsequently, lasers displaying outputs ranging from 402.6 to 430.2 have been successfully tested at NCSU.

Extremely low losses 14xx single mode laser diode leading to 550-mW output power module with 0-75°C case temperature and 10-W consumption

2012 ◽  
Author(s):  
J.-R. Burie ◽  
P. Garabedian ◽  
C. Starck ◽  
P. Pagnod-Rossiaux ◽  
M. Bettiati ◽  
...  
Keyword(s):  
Output Power ◽  
Laser Diode ◽  
Single Mode ◽  
Power Module ◽  
Mode Laser ◽  
Single Mode Laser

InGaN mini-laser diode arrays with cw output power of 500 mW

2011 ◽  
Vol 8 (7-8) ◽  
pp. 2348-2350 ◽  
Author(s):  
Katarzyna Holc ◽  
Agnieszka Sarzyńska ◽  
Michał Boćkowski ◽  
Robert Czernecki ◽  
Michał Leszczyński ◽  
...  
Keyword(s):  
Output Power ◽  
Laser Diode ◽  
Laser Diode Arrays
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