High-Performance Normally-OFF GaN MIS-HEMTs Using Hybrid Ferroelectric Charge Trap Gate Stack (FEG-HEMT) for Power Device Applications

2018 ◽  
Vol 39 (7) ◽  
pp. 991-994 ◽  
Author(s):  
Chia-Hsun Wu ◽  
Ping-Cheng Han ◽  
Shih-Chien Liu ◽  
Ting-En Hsieh ◽  
Franky Juanda Lumbantoruan ◽  
...  
Keyword(s):  
High Performance ◽  
Power Device ◽  
Gate Stack ◽  
Charge Trap ◽  
Device Applications

scholarly journals High-Performance LPCVD-SiNx/InAlGaN/GaN MIS-HEMTs With 850-V 0.98-$\text{m}{\Omega} \cdot$ cm2 for Power Device Applications

2018 ◽  
Vol 6 ◽  
pp. 1136-1141 ◽  
Author(s):  
Huan-Chung Wang ◽  
Franky Juanda Lumbantoruan ◽  
Ting-En Hsieh ◽  
Chia-Hsun Wu ◽  
Yueh-Chin Lin ◽  
...  
Keyword(s):  
High Performance ◽  
Power Device ◽  
Device Applications

High hole mobility in boron doped diamond for power device applications

2009 ◽  
Vol 94 (9) ◽  
pp. 092102 ◽  
Author(s):  
Pierre-Nicolas Volpe ◽  
Julien Pernot ◽  
Pierre Muret ◽  
Franck Omnès
Keyword(s):  
Hole Mobility ◽  
Power Device ◽  
Boron Doped Diamond ◽  
Boron Doped ◽  
Device Applications

scholarly journals Design of a Low on Resistance High Voltage (120V) Novel 3D NLDMOS with Side Isolation Based on 0.35um BCD Process Technology

2018 ◽  
Vol 201 ◽  
pp. 02004
Author(s):  
Shao-Ming Yang ◽  
Gene Sheu ◽  
Tzu Chieh Lee ◽  
Ting Yao Chien ◽  
Chieh Chih Wu ◽  
...  
Keyword(s):  
Breakdown Voltage ◽  
High Voltage ◽  
High Performance ◽  
Power Device ◽  
Simulation Tool ◽  
Process Technology ◽  
Surface Field ◽  
Kirk Effect ◽  
Tcad Simulation ◽  
Reduced Surface

High performance power device is necessary for BCD power device. In this paper, we used 3D Synopsis TCAD simulation tool Sentaurus to develop 120V device and successfully simulated. We implemented in a conventional 0.35um BCDMOS process to present of a novel high side 120V LDMOS have reduced surface field (RESURF) and Liner p-top structure with side isolation technology. The device has been research to achieve a benchmark specific on-resistance of 189 mΩ-mm2 while maintaining horizontal breakdown voltage and vertical isolation voltage both to target breakdown voltage of 120V. In ESOA, we also proposed a better performance of both device without kirk effect.

A field effect transistor using highly nitrogen-doped CVD diamond for power device applications

2003 ◽  
Vol 216 (1-4) ◽  
pp. 483-489 ◽  
Author(s):  
Yoko Yokoyama ◽  
Xueqing Li ◽  
Kuang Sheng ◽  
Andrei Mihaila ◽  
Tanija Traikovic ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistor ◽  
Cvd Diamond ◽  
Power Device ◽  
Nitrogen Doped ◽  
Device Applications ◽  
Effect Transistor

E-Mode GaN MIS-HEMT Using Ferroelectric Charge Trap Gate Stack with Low Dynamic On-Resistance and High Vth Stability by Field Plate Engineering

2021 ◽  
pp. 1-1
Author(s):  
Jui-Sheng Wu ◽  
Chih-Chieh Lee ◽  
Chia-Hsun Wu ◽  
Min-Lu Kao ◽  
You-Chen Weng ◽  
...  
Keyword(s):  
Gate Stack ◽  
Charge Trap ◽  
Field Plate

High-performance stretchable conductive nanocomposites: materials, processes, and device applications

2019 ◽  
Vol 48 (6) ◽  
pp. 1566-1595 ◽  
Author(s):  
Suji Choi ◽  
Sang Ihn Han ◽  
Dokyoon Kim ◽  
Taeghwan Hyeon ◽  
Dae-Hyeong Kim
Keyword(s):  
High Performance ◽  
Filler Materials ◽  
Conductive Nanocomposites ◽  
Device Applications

This article reviews the cascade strategy of stretchable conductive nanocomposites where various filler materials are processed for stretchable electronic applications.

Normally-Off Tri-Gate GaN MIS-HEMTs with 0.76 mΩ·cm2 Specific On-Resistance for Power Device Applications

2019 ◽  
Vol 66 (8) ◽  
pp. 3441-3446 ◽  
Author(s):  
Chia-Hsun Wu ◽  
Jian-You Chen ◽  
Ping-Cheng Han ◽  
Ming-Wen Lee ◽  
Kun-Sheng Yang ◽  
...  
Keyword(s):  
Power Device ◽  
Device Applications
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