Enhancement-Mode AlN/GaN HEMTs With High Ion/Ioff and Low-Leakage-Current Fabricated With Low-Power Surface Oxidation Treatment

2018 ◽  
Vol 39 (5) ◽  
pp. 719-722 ◽  
Author(s):  
Ming Xiao ◽  
Xiaoling Duan ◽  
Jincheng Zhang ◽  
Yue Hao
Keyword(s):  
Low Power ◽  
Leakage Current ◽  
Surface Oxidation ◽  
Oxidation Treatment ◽  
Enhancement Mode ◽  
Low Leakage ◽  
Low Leakage Current ◽  
Gan Hemts

Development of high k/III-V (InGaAs, InAs, InSb) structures for future low power, high speed device applications

2013 ◽  
Vol 1538 ◽  
pp. 291-302
Author(s):  
Edward Yi Chang ◽  
Hai-Dang Trinh ◽  
Yueh-Chin Lin ◽  
Hiroshi Iwai ◽  
Yen-Ku Lin
Keyword(s):  
Low Power ◽  
Leakage Current ◽  
High Speed ◽  
High Performance ◽  
Gate Oxide ◽  
Chemical Cleaning ◽  
Low Leakage ◽  
Low Leakage Current ◽  
High K ◽  
Cleaning Methods

ABSTRACTIII-V compounds such as InGaAs, InAs, InSb have great potential for future low power high speed devices (such as MOSFETs, QWFETs, TFETs and NWFETs) application due to their high carrier mobility and drift velocity. The development of good quality high k gate oxide as well as high k/III-V interfaces is prerequisite to realize high performance working devices. Besides, the downscaling of the gate oxide into sub-nanometer while maintaining appropriate low gate leakage current is also needed. The lack of high quality III-V native oxides has obstructed the development of implementing III-V based devices on Si template. In this presentation, we will discuss our efforts to improve high k/III-V interfaces as well as high k oxide quality by using chemical cleaning methods including chemical solutions, precursors and high temperature gas treatments. The electrical properties of high k/InSb, InGaAs, InSb structures and their dependence on the thermal processes are also discussed. Finally, we will present the downscaling of the gate oxide into sub-nanometer scale while maintaining low leakage current and a good high k/III-V interface quality.

Low Leakage Current ITO Schottky Electrodes for AlGaN/GaN HEMTs

2008 ◽  
Vol E91-C (7) ◽  
pp. 1015-1019 ◽  
Author(s):  
K. MATSUDA ◽  
T. KAWASAKI ◽  
K. NAKATA ◽  
T. IGARASHI ◽  
S. YAEGASSI
Keyword(s):  
Leakage Current ◽  
Low Leakage ◽  
Low Leakage Current ◽  
Gan Hemts

Multi channel AlGaN/GaN HEMTs for high breakdown voltage and low leakage current

2004 ◽  
Author(s):  
Seung-Chul Lee ◽  
Jin-Cherl Her ◽  
Min-Woo Ha ◽  
Kwang-Seok Seo ◽  
Min-Koo Han
Keyword(s):  
Leakage Current ◽  
Breakdown Voltage ◽  
High Breakdown Voltage ◽  
Low Leakage ◽  
Low Leakage Current ◽  
Gan Hemts

HfO2∕HfSixOy high-K gate stack with very low leakage current for low-power poly-Si gated CMOS application

2003 ◽  
Vol 39 (8) ◽  
pp. 692 ◽  
Author(s):  
C.W. Yang ◽  
Y.K. Fang ◽  
S.F. Chen ◽  
M.F. Wang ◽  
T.H. Hou ◽  
...  
Keyword(s):  
Low Power ◽  
Leakage Current ◽  
Gate Stack ◽  
Low Leakage ◽  
Low Leakage Current ◽  
High K

Low-Leakage-Current Enhancement-Mode AlGaN/GaN Heterostructure Field-Effect Transistor Using p-Type Gate Contact

2006 ◽  
Vol 45 (No. 11) ◽  
pp. L319-L321 ◽  
Author(s):  
Norio Tsuyukuchi ◽  
Kentaro Nagamatsu ◽  
Yoshikazu Hirose ◽  
Motoaki Iwaya ◽  
Satoshi Kamiyama ◽  
...  
Keyword(s):  
Leakage Current ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Enhancement Mode ◽  
Low Leakage ◽  
Low Leakage Current ◽  
Effect Transistor ◽  
Gan Heterostructure ◽  
P Type

High-Performance Low-Leakage-Current AlN/GaN HEMTs Grown on Silicon Substrate

2011 ◽  
Vol 32 (7) ◽  
pp. 874-876 ◽  
Author(s):  
F. Medjdoub ◽  
M. Zegaoui ◽  
D. Ducatteau ◽  
N. Rolland ◽  
P. A. Rolland
Keyword(s):  
Leakage Current ◽  
Silicon Substrate ◽  
High Performance ◽  
Low Leakage ◽  
Low Leakage Current ◽  
Gan Hemts

scholarly journals Low Leakage Current Symmetrical Dual-k 7 nm Trigate Bulk Underlap FinFET for Ultra Low Power Applications

IEEE Access ◽  
2019 ◽  
Vol 7 ◽  
pp. 17256-17262 ◽  
Author(s):  
Mahmoud S. Badran ◽  
Hanady Hussein Issa ◽  
Saleh M. Eisa ◽  
Hani Fikry Ragai
Keyword(s):  
Low Power ◽  
Leakage Current ◽  
Ultra Low Power ◽  
Low Leakage ◽  
Low Leakage Current

AlGaN/GaN HEMTs on Silicon With Hybrid Schottky–Ohmic Drain for High Breakdown Voltage and Low Leakage Current

2012 ◽  
Vol 33 (7) ◽  
pp. 973-975 ◽  
Author(s):  
Yi-Wei Lian ◽  
Yu-Syuan Lin ◽  
Hou-Cheng Lu ◽  
Yen-Chieh Huang ◽  
Shawn S. H. Hsu
Keyword(s):  
Leakage Current ◽  
Breakdown Voltage ◽  
High Breakdown Voltage ◽  
Low Leakage ◽  
Low Leakage Current ◽  
Gan Hemts

AlGaN/GaN HEMTs With Low Leakage Current and High On/Off Current Ratio

2010 ◽  
Vol 31 (2) ◽  
pp. 102-104 ◽  
Author(s):  
Yu-Syuan Lin ◽  
Yi-Wei Lain ◽  
S.S.H. Hsu
Keyword(s):  
Leakage Current ◽  
Current Ratio ◽  
Low Leakage ◽  
Low Leakage Current ◽  
Gan Hemts
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