Negative Differential Resistance in Negative Capacitance FETs

2018 ◽  
Vol 39 (4) ◽  
pp. 622-625 ◽  
Author(s):  
Jiuren Zhou ◽  
Genquan Han ◽  
Jing Li ◽  
Yan Liu ◽  
Yue Peng ◽  
...  
Keyword(s):  
Negative Differential Resistance ◽  
Differential Resistance ◽  
Negative Capacitance

scholarly journals LoGHeD: An effective approach for negative differential resistance effect suppression in negative capacitance transistors

2022 ◽  
Author(s):  
Ziqiang Xie ◽  
Weifeng Lyu ◽  
Mengxue Guo ◽  
Mengjie Zhao
Keyword(s):  
Negative Differential Resistance ◽  
Computer Aided Design ◽  
Differential Resistance ◽  
Silicon On Insulator ◽  
Negative Capacitance ◽  
Fully Depleted ◽  
In Doping ◽  
Drain Side ◽  
Negative Differential Resistance Effect ◽  
Aided Design

Abstract A negative capacitance transistor (NCFET) with fully depleted silicon-on-insulator (FDSOI) technology (NC-FDSOI) is one of the promising candidates for next-generation low-power devices. However, it suffers from the inherent negative differential resistance (NDR) effect, which is very detrimental to device and circuit designs. Aiming at overcoming this shortcoming, this paper proposes for the first time to use local Gaussian heavy doping technology (LoGHeD) in the channel near the drain side to suppress the NDR effect in the NC-FDSOI. The technical computer-aided design (TCAD) simulation results have validated that the output conductance (GDS) with LoGHeD, which is used to measure the NDR effect, increases compared to the conventional NC-FDSOI counterpart and approaches zero. With the increase in doping concentration, the inhibitory capability of the NDR effect shows a monotonously increasing trend. In addition, the proposed approach maintains and even enhances performances of the NC-FDSOI transistor regarding the electrical parameters, such as threshold voltage (VTH), sub-threshold swing (SS), switching current ratio (ION/IOFF), and drain-induced barrier lowering (DIBL).

scholarly journals ZrOx Negative Capacitance Field-Effect Transistor with Sub-60 Subthreshold Swing Behavior

2021 ◽  
Vol 16 (1) ◽  
Author(s):  
Siqing Zhang ◽  
Huan Liu ◽  
Jiuren Zhou ◽  
Yan Liu ◽  
Genquan Han ◽  
...  
Keyword(s):  
Oxygen Vacancy ◽  
Negative Differential Resistance ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Differential Resistance ◽  
Control Device ◽  
Subthreshold Swing ◽  
Negative Capacitance ◽  
Effect Transistor ◽  
Clockwise Hysteresis

AbstractHere we report the ZrOx-based negative capacitance (NC) FETs with 45.06 mV/decade subthreshold swing (SS) under ± 1 V VGS range, which can achieve new opportunities in future voltage-scalable NCFET applications. The ferroelectric-like behavior of the Ge/ZrOx/TaN capacitors is proposed to be originated from the oxygen vacancy dipoles. The NC effect of the amorphous HfO2 and ZrOx films devices can be proved by the sudden drop of gate leakage, the negative differential resistance (NDR) phenomenon, the enhancement of IDS and sub-60 subthreshold swing. 5 nm ZrOx-based NCFETs achieve a clockwise hysteresis of 0.24 V, lower than 60 mV/decade SS and an 12% IDS enhancement compared to the control device without ZrOx. The suppressed NC effect of Al2O3/HfO2 NCFET compared with ZrOx NCFET is related to the partial switching of oxygen vacancy dipoles in the forward sweeping due to negative interfacial dipoles at the Al2O3/HfO2 interface.

scholarly journals ZrO2 Negtive Capacitance Field-Effect Transistor with Sub-60 Subthreshold Swing Behavior

2020 ◽  
Author(s):  
Siqing Zhang ◽  
Huan Liu ◽  
Jiuren Zhou ◽  
Yan Liu ◽  
Genquan Han ◽  
...  
Keyword(s):  
Oxygen Vacancy ◽  
Negative Differential Resistance ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Differential Resistance ◽  
Control Device ◽  
Subthreshold Swing ◽  
Negative Capacitance ◽  
Effect Transistor ◽  
Clockwise Hysteresis

Abstract Here we report the ZrO2 - based Negative capacitance (NC) FETs with 45.06 mV/decade subthreshold swing (SS) under ±1 V V GS range, which can achieve new opportunities in furture voltage-scalable NCFET applications. The ferroelectric-like behavior of the Ge/ZrO2/TaN capacitors is proposed to be originated from the oxygen vacancy dipoles. The NC effect of the amorphous HfO2 and ZrO2 films devices can be proved by the sudden drop of gate leakage, the negative differential resistance (NDR) phenomenon, the enhancement of I DS and sub-60 subthreshold swing. 5 nm ZrO2 - based NCFETs achieve a clockwise hysteresis of of 0.24 V, lower than 60 mV/decade SS and an 12% I DS enhancement compared to the control device without ZrO2 . The suppressed NC effect of Al2O3/HfO2 NCFET compared with ZrO2 NCFET is related to the partical swiching of oxygen vacancy dipoles in the forward sweeping due to negative interfical dipoles at the Al2O3 /HfO2 interface.

Compositional Tuning of Negative Differential Resistance in Bulk Silver Iodide Memristor

2020 ◽  
Author(s):  
SMITA GAJANAN NAIK ◽  
Mohammad Hussain Kasim Rabinal
Keyword(s):  
Power Consumption ◽  
Negative Differential Resistance ◽  
Silver Iodide ◽  
Differential Resistance ◽  
Fast Response ◽  
Low Power Consumption ◽  
Switching Effect ◽  
Memory Switching ◽  
Bulk Silver ◽  
Emerging Memory

Electrical memory switching effect has received a great interest to develop emerging memory technology such as memristors. The high density, fast response, multi-bit storage and low power consumption are their...

Experimental Studies of New GaAs Metal/Insulator/p-n+Switches Using Low Temperature Oxide

2002 ◽  
Vol 25 (3) ◽  
pp. 233-237
Author(s):  
K. F. Yarn
Keyword(s):  
Low Temperature ◽  
Negative Differential Resistance ◽  
Doping Concentration ◽  
Experimental Studies ◽  
Differential Resistance ◽  
Switching Behavior ◽  
Metal Insulator ◽  
Turn On ◽  
Temperature Oxide ◽  
Phase Chemical

First observation of switching behavior is reported in GaAs metal-insulator-p-n+structure, where the thin insulator is grown at low temperature by a liquid phase chemical-enhanced oxide (LPECO) with a thickness of 100 Å. A significant S-shaped negative differential resistance (NDR) is shown to occur that originates from the regenerative feedback in a tunnel metal/insulator/semiconductor (MIS) interface andp-n+junction. The influence of epitaxial doping concentration on the switching and holding voltages is investigated. The switching voltages are found to be decreased when increasing the epitaxial doping concentration, while the holding voltages are almost kept constant. A high turn-off/turn-on resistance ratio up to105has been obtained.

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