Improvement in the Negative Bias Illumination Stress Stability for Silicon-Ion Implanted Amorphous InGaZnO Thin-Film Transistors

Tetsuya Goto; Fuminobu Imaizumi; Shigetoshi Sugawa

doi:10.1109/led.2017.2660486

Improvement in the Negative Bias Illumination Stress Stability for Silicon-Ion Implanted Amorphous InGaZnO Thin-Film Transistors

IEEE Electron Device Letters ◽

10.1109/led.2017.2660486 ◽

2017 ◽

Vol 38 (3) ◽

pp. 345-348 ◽

Cited By ~ 5

Author(s):

Tetsuya Goto ◽

Fuminobu Imaizumi ◽

Shigetoshi Sugawa

Keyword(s):

Thin Film ◽

Thin Film Transistors ◽

Negative Bias ◽

Amorphous Ingazno ◽

Negative Bias Illumination Stress ◽

Ion Implanted

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Removal of Negative-Bias-Illumination-Stress Instability in Amorphous-InGaZnO Thin-Film Transistors by Top-Gate Offset Structure

IEEE Electron Device Letters ◽

10.1109/led.2014.2333014 ◽

2014 ◽

Vol 35 (9) ◽

pp. 930-932 ◽

Cited By ~ 36

Author(s):

Suhui Lee ◽

Mallory Mativenga ◽

Jin Jang

Keyword(s):

Thin Film ◽

Thin Film Transistors ◽

Negative Bias ◽

Amorphous Ingazno ◽

Negative Bias Illumination Stress

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Quantitative Analysis of Negative Bias Illumination Stress-Induced Instability Mechanisms in Amorphous InGaZnO Thin-Film Transistors

Journal of the Korean Physical Society ◽

10.3938/jkps.59.474 ◽

2011 ◽

Vol 59 (2(1)) ◽

pp. 474-477 ◽

Cited By ~ 1

Author(s):

Yongsik Kim ◽

Min-Kyung Bae ◽

Dongsik Kong ◽

Hyun Kwnag Jung ◽

Jeahyeong Kim ◽

...

Keyword(s):

Thin Film ◽

Quantitative Analysis ◽

Thin Film Transistors ◽

Negative Bias ◽

Amorphous Ingazno ◽

Negative Bias Illumination Stress

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Negative bias illumination stress instability in amorphous InGaZnO thin film transistors with ITO local conducting buried layer

Microelectronics Reliability ◽

10.1016/j.microrel.2017.06.020 ◽

2017 ◽

Vol 76-77 ◽

pp. 327-332 ◽

Cited By ~ 1

Author(s):

Sang Min Kim ◽

Min-Soo Kang ◽

Won-Ju Cho ◽

Jong Tae Park

Keyword(s):

Thin Film ◽

Thin Film Transistors ◽

Negative Bias ◽

Buried Layer ◽

Amorphous Ingazno ◽

Negative Bias Illumination Stress

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Effect of the Active Layer Thickness on the Negative Bias Illumination Stress-induced Instability in Amorphous InGaZnO Thin-film Transistors

Journal of the Korean Physical Society ◽

10.3938/jkps.59.505 ◽

2011 ◽

Vol 59 (2(1)) ◽

pp. 505-510 ◽

Cited By ~ 6

Author(s):

Dongsik Kong ◽

Hyunkwnag Jung ◽

Yongsik Kim ◽

Minkyung Bae ◽

Jaeman Jang ◽

...

Keyword(s):

Thin Film ◽

Layer Thickness ◽

Active Layer ◽

Thin Film Transistors ◽

Active Layer Thickness ◽

Negative Bias ◽

Amorphous Ingazno ◽

Negative Bias Illumination Stress

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The Calculation of Negative Bias Illumination Stress-Induced Instability of Amorphous InGaZnO Thin-Film Transistors for Instability-Aware Design

IEEE Transactions on Electron Devices ◽

10.1109/ted.2018.2797208 ◽

2018 ◽

Vol 65 (3) ◽

pp. 1002-1008 ◽

Cited By ~ 1

Author(s):

Jun Tae Jang ◽

Sung-Jin Choi ◽

Dong Myong Kim ◽

Dae Hwan Kim

Keyword(s):

Thin Film ◽

Thin Film Transistors ◽

Negative Bias ◽

Amorphous Ingazno ◽

Negative Bias Illumination Stress

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Amorphous InGaZnO Thin-Film Transistors—Part II: Modeling and Simulation of Negative Bias Illumination Stress-Induced Instability

IEEE Transactions on Electron Devices ◽

10.1109/ted.2012.2208971 ◽

2012 ◽

Vol 59 (10) ◽

pp. 2699-2706 ◽

Cited By ~ 37

Author(s):

Yongsik Kim ◽

Sungchul Kim ◽

Woojoon Kim ◽

Minkyung Bae ◽

Hyun Kwang Jeong ◽

...

Keyword(s):

Thin Film ◽

Modeling And Simulation ◽

Thin Film Transistors ◽

Negative Bias ◽

Amorphous Ingazno ◽

Negative Bias Illumination Stress

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Negative bias illumination stress instability in amorphous InGaZnO thin film transistors with transparent source and drain

Microelectronics Reliability ◽

10.1016/j.microrel.2016.07.036 ◽

2016 ◽

Vol 64 ◽

pp. 580-584 ◽

Cited By ~ 1

Author(s):

Jong Hoon Lee ◽

Seul Ki Yu ◽

Jae Won Kim ◽

Min-Ju Ahn ◽

Won-Ju Cho ◽

...

Keyword(s):

Thin Film ◽

Thin Film Transistors ◽

Negative Bias ◽

Amorphous Ingazno ◽

Negative Bias Illumination Stress

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P-141L:Late-News Poster: Characterization of Physical Parameter-Based Reliability on the Negative Bias Illumination Stress with Wavelength-Dependence in Amorphous Silicon Thin-Film Transistors

SID Symposium Digest of Technical Papers ◽

10.1002/j.2168-0159.2012.tb05993.x ◽

2012 ◽

Vol 43 (1) ◽

pp. 1133-1136 ◽

Cited By ~ 1

Author(s):

Hyun Kwang Jeong ◽

Inseok Hur ◽

Woojoon Kim ◽

Jaehyeong Kim ◽

Dongsik Kong ◽

...

Keyword(s):

Thin Film ◽

Amorphous Silicon ◽

Physical Parameter ◽

Thin Film Transistors ◽

Wavelength Dependence ◽

Negative Bias ◽

Silicon Thin Film ◽

Negative Bias Illumination Stress

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Effect of Bandgap Widening on Negative-Bias Illumination Stress Stability of Oxide Thin-Film Transistors

IEEE Transactions on Electron Devices ◽

10.1109/ted.2021.3095135 ◽

2021 ◽

Vol 68 (9) ◽

pp. 4450-4454

Author(s):

Caihao Deng ◽

Linfeng Lan ◽

Penghui He ◽

Yaping Li ◽

Xiao Li ◽

...

Keyword(s):

Thin Film ◽

Thin Film Transistors ◽

Oxide Thin Film ◽

Negative Bias ◽

Negative Bias Illumination Stress

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P.62: Effects of Amorphous InGaZnO Thin Film Transistors with Various Buffer Layers on Polyimide Substrate Under Negative Bias-temperature Stresses

SID Symposium Digest of Technical Papers ◽

10.1002/j.2168-0159.2013.tb06453.x ◽

2013 ◽

Vol 44 (1) ◽

pp. 1229-1231 ◽

Cited By ~ 1

Author(s):

Kyung-Chul Ok ◽

Sang-Hee Ko Park ◽

Chi-Sun Hwang ◽

Hyun Soo Shin ◽

Daehwan Kim ◽

...

Keyword(s):

Thin Film ◽

Thin Film Transistors ◽

Buffer Layers ◽

Negative Bias ◽

Temperature Stresses ◽

Polyimide Substrate ◽

Amorphous Ingazno

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