scholarly journals Fully Depleted Pinned Photodiode CMOS Image Sensor With Reverse Substrate Bias

2017 ◽  
Vol 38 (1) ◽  
pp. 64-66 ◽  
Author(s):  
Konstantin D. Stefanov ◽  
Andrew S. Clarke ◽  
Andrew D. Holland
Keyword(s):  
Cmos Image Sensor ◽  
Image Sensor ◽  
Substrate Bias ◽  
Fully Depleted ◽  
Pinned Photodiode

scholarly journals Design and Performance of a Pinned Photodiode CMOS Image Sensor Using Reverse Substrate Bias

Sensors ◽  
2018 ◽  
Vol 18 (2) ◽  
pp. 118 ◽  
Author(s):  
Konstantin Stefanov ◽  
Andrew Clarke ◽  
James Ivory ◽  
Andrew Holland
Keyword(s):  
Cmos Image Sensor ◽  
Image Sensor ◽  
Substrate Bias ◽  
And Performance ◽  
Pinned Photodiode

A Three-Dimensional Time-of-Flight CMOS Image Sensor With Pinned-Photodiode Pixel Structure

2010 ◽  
Author(s):  
Seong-Jin Kim ◽  
Sang-Wook Han ◽  
Byongmin Kang ◽  
Keechang Lee ◽  
James D. K. Kim ◽  
...  
Keyword(s):  
Three Dimensional ◽  
Time Of Flight ◽  
Cmos Image Sensor ◽  
Image Sensor ◽  
Pinned Photodiode

Rad Tolerant CMOS Image Sensor Based on Hole Collection 4T Pixel Pinned Photodiode

2012 ◽  
Vol 59 (6) ◽  
pp. 2888-2893 ◽  
Author(s):  
S. Place ◽  
J-P Carrere ◽  
S. Allegret ◽  
P. Magnan ◽  
V. Goiffon ◽  
...  
Keyword(s):  
Cmos Image Sensor ◽  
Image Sensor ◽  
Pinned Photodiode

6.8 A 1.5V 33Mpixel 3D-stacked CMOS image sensor with negative substrate bias

2016 ◽  
Author(s):  
Charles Chih-Min Liu ◽  
Manoj M. Mhala ◽  
Chin-Hao Chang ◽  
Honyih Tu ◽  
Po-Sheng Chou ◽  
...  
Keyword(s):  
Cmos Image Sensor ◽  
Image Sensor ◽  
Substrate Bias ◽  
Negative Substrate Bias

scholarly journals Leakage Current Non-Uniformity and Random Telegraph Signals in CMOS Image Sensor Floating Diffusions Used for In-Pixel Charge Storage

Sensors ◽  
2019 ◽  
Vol 19 (24) ◽  
pp. 5550
Author(s):  
Alexandre Le Roch ◽  
Vincent Goiffon ◽  
Olivier Marcelot ◽  
Philippe Paillet ◽  
Federico Pace ◽  
...  
Keyword(s):  
Electric Field ◽  
Leakage Current ◽  
Cmos Image Sensor ◽  
Image Sensor ◽  
Field Region ◽  
High Magnitude ◽  
Random Telegraph Signals ◽  
Tcad Simulations ◽  
Pinned Photodiode

The leakage current non-uniformity, as well as the leakage current random and discrete fluctuations sources, are investigated in pinned photodiode CMOS image sensor floating diffusions. Different bias configurations are studied to evaluate the electric field impacts on the FD leakage current. This study points out that high magnitude electric field regions could explain the high floating diffusion leakage current non-uniformity and its fluctuation with time called random telegraph signal. Experimental results are completed with TCAD simulations allowing us to further understand the role of the electric field in the FD leakage current and to locate a high magnitude electric field region in the overlap region between the floating diffusion implantation and the transfer gate spacer.

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