Enhanced Properties in Conductive-Bridge Resistive Switching Memory With Oxide-Nitride Bilayer Structure

Tsung-Ling Tsai; Fa-Shen Jiang; Chia-Hua Ho; Chen-Hsi Lin; Tseung-Yuen Tseng

doi:10.1109/led.2016.2602886

Enhanced Properties in Conductive-Bridge Resistive Switching Memory With Oxide-Nitride Bilayer Structure

IEEE Electron Device Letters ◽

10.1109/led.2016.2602886 ◽

2016 ◽

Vol 37 (10) ◽

pp. 1284-1287 ◽

Cited By ~ 20

Author(s):

Tsung-Ling Tsai ◽

Fa-Shen Jiang ◽

Chia-Hua Ho ◽

Chen-Hsi Lin ◽

Tseung-Yuen Tseng

Keyword(s):

Resistive Switching ◽

Bilayer Structure ◽

Resistive Switching Memory ◽

Conductive Bridge ◽

Enhanced Properties ◽

Switching Memory

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Investigation on Amorphous Ga2O3 Based Conductive-Bridge Resistive Switching Memory with Low-Power, High-Speed, High Reliability

ECS Meeting Abstracts ◽

10.1149/ma2018-02/18/744 ◽

2018 ◽

Keyword(s):

Low Power ◽

Resistive Switching ◽

High Speed ◽

High Reliability ◽

Resistive Switching Memory ◽

Conductive Bridge ◽

Switching Memory

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Formation and Rupture of Ag Conductive Bridge in ZrO2-Based Resistive Switching Memory

Journal of Nanoscience and Nanotechnology ◽

10.1166/jnn.2012.5768 ◽

2012 ◽

Vol 12 (3) ◽

pp. 2437-2441 ◽

Cited By ~ 6

Author(s):

Chun-Chieh Lin ◽

Yi-Peng Chang

Keyword(s):

Resistive Switching ◽

Resistive Switching Memory ◽

Conductive Bridge ◽

Switching Memory

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Resistive Switching Memory: Reliable Ge 2 Sb 2 Te 5 ‐Integrated High‐Density Nanoscale Conductive Bridge Random Access Memory using Facile Nitrogen‐Doping Strategy (Adv. Electron. Mater. 11/2018)

Advanced Electronic Materials ◽

10.1002/aelm.201870052 ◽

2018 ◽

Vol 4 (11) ◽

pp. 1870052

Author(s):

Niloufar Raeis‐Hosseini ◽

Seokjae Lim ◽

Hyunsang Hwang ◽

Junsuk Rho

Keyword(s):

Resistive Switching ◽

Nitrogen Doping ◽

Random Access ◽

Random Access Memory ◽

High Density ◽

Access Memory ◽

Resistive Switching Memory ◽

Conductive Bridge ◽

Switching Memory

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A high performance transparent resistive switching memory made from ZrO2/AlON bilayer structure

Applied Physics Letters ◽

10.1063/1.4946006 ◽

2016 ◽

Vol 108 (15) ◽

pp. 153505 ◽

Cited By ~ 32

Author(s):

Tsung-Ling Tsai ◽

Hsiang-Yu Chang ◽

Jesse Jen-Chung Lou ◽

Tseung-Yuen Tseng

Keyword(s):

Resistive Switching ◽

High Performance ◽

Bilayer Structure ◽

Resistive Switching Memory ◽

Switching Memory

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Metal induced crystallized poly-Si-based conductive bridge resistive switching memory device with one transistor and one resistor architecture

Applied Physics Letters ◽

10.1063/1.4935862 ◽

2015 ◽

Vol 107 (20) ◽

pp. 203502 ◽

Cited By ~ 19

Author(s):

Umesh Chand ◽

Chun-Yang Huang ◽

Dayanand Kumar ◽

Tseung-Yuen Tseng

Keyword(s):

Resistive Switching ◽

Memory Device ◽

Resistive Switching Memory ◽

Conductive Bridge ◽

Switching Memory

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A versatile multifaceted resistive switching memory activated by light and ion irradiation in poly (3-octylthiophene)-zinc oxide hybrids

Organic Electronics ◽

10.1016/j.orgel.2020.105932 ◽

2020 ◽

Vol 87 ◽

pp. 105932 ◽

Cited By ~ 1

Author(s):

Jitendra Singh ◽

R.G. Singh ◽

Subodh K. Gautam ◽

Himanshi Gupta ◽

Fouran Singh

Keyword(s):

Zinc Oxide ◽

Resistive Switching ◽

Ion Irradiation ◽

Resistive Switching Memory ◽

Switching Memory

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Resistive Switching Memory: Smart Design of Resistive Switching Memory by an In Situ Current‐Induced Oxidization Process on a Single Crystalline Metallic Nanowire (Adv. Electron. Mater. 5/2021)

Advanced Electronic Materials ◽

10.1002/aelm.202170015 ◽

2021 ◽

Vol 7 (5) ◽

pp. 2170015

Author(s):

Yu‐Chuan Shih ◽

Ling Lee ◽

Kai‐De Liang ◽

Arumugam Manikandan ◽

Wen‐Wu Liu ◽

...

Keyword(s):

Resistive Switching ◽

Single Crystalline ◽

Resistive Switching Memory ◽

Switching Memory

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Polymer Nanocomposites for Resistive Switching Memory

Polymer Nanocomposite Materials ◽

10.1002/9783527826490.ch8 ◽

2021 ◽

pp. 211-246

Author(s):

Qazi Muhammad Saqib ◽

Muhammad Umair Khan ◽

Jinho Bae

Keyword(s):

Polymer Nanocomposites ◽

Resistive Switching ◽

Resistive Switching Memory ◽

Switching Memory

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Spray-Coated, Volatile and Nonvolatile, Two-Terminal, Resistive Switching Memory Devices Comprising Liquid-Exfoliated Black Phosphorus and Graphene Layers

IEEE Transactions on Electron Devices ◽

10.1109/ted.2020.3029552 ◽

2020 ◽

Vol 67 (12) ◽

pp. 5484-5489

Author(s):

Yooyeon Jo ◽

Christos Dimitrakopoulos

Keyword(s):

Resistive Switching ◽

Black Phosphorus ◽

Memory Devices ◽

Graphene Layers ◽

Resistive Switching Memory ◽

Switching Memory

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Flexible Three-Bit-Per-Cell Resistive Switching Memory Using a-IGZO TFTs

IEEE Electron Device Letters ◽

10.1109/led.2013.2278098 ◽

2013 ◽

Vol 34 (10) ◽

pp. 1265-1267 ◽

Cited By ~ 14

Author(s):

Shih-Chieh Wu ◽

Hsien-Tsung Feng ◽

Ming-Jiue Yu ◽

I-Ting Wang ◽

Tuo-Hung Hou

Keyword(s):

Resistive Switching ◽

Resistive Switching Memory ◽

Switching Memory

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