The Unique Current-Direction Dependent On-Off Switching in BiSbTeSe2 Topological Insulator Based Spin Valve Transistors

2016 ◽  
pp. 1-1 ◽  
Author(s):  
Minhao Zhang ◽  
Xuefeng Wang ◽  
Shuai Zhang ◽  
Yuan Gao ◽  
Zhihao Yu ◽  
...  
Keyword(s):  
Topological Insulator ◽  
Spin Valve ◽  
Current Direction

scholarly journals Vortex spin valve on a topological insulator

2018 ◽  
Vol 98 (14) ◽  
Author(s):  
Morten Amundsen ◽  
Henning G. Hugdal ◽  
Asle Sudbø ◽  
Jacob Linder
Keyword(s):  
Topological Insulator ◽  
Spin Valve

Spin filter effect of hBN/Co detector electrodes in a 3D topological insulator spin valve

2018 ◽  
Vol 30 (10) ◽  
pp. 105302 ◽  
Author(s):  
Kristina Vaklinova ◽  
Katharina Polyudov ◽  
Marko Burghard ◽  
Klaus Kern
Keyword(s):  
Topological Insulator ◽  
Spin Valve ◽  
Spin Filter ◽  
Filter Effect

BIAS DEPENDENCE OF SPIN TRANSFER TORQUE IN A MAGNETIC TUNNEL JUNCTION

2009 ◽  
Vol 23 (05) ◽  
pp. 695-702
Author(s):  
J. CUI ◽  
Y. H. YANG ◽  
J. WANG
Keyword(s):  
Tunnel Junction ◽  
Continuum Model ◽  
Theoretical Study ◽  
Spin Valve ◽  
Magnetic Tunnel Junction ◽  
Spin Transfer Torque ◽  
Spin Transfer ◽  
Function Technique ◽  
Current Direction ◽  
Analytic Expression

We report a theoretical study on the bias dependence of the current-induced torque in the noncollinear ferromagnet/barrier/ferromagnet (FM) tunnel junction. By using the Keldysh–Green function technique, we derived an analytic expression of the spin transfer torque (STT) based on a continuum model. It was found that for finite bias, the torque induced by current increases monotonically with bias and is nearly antisymmetric with regard to the current direction, which agrees with the experimental observation on the STT in the spin valve system.

Rem Study of Current Effect on the Structure of Clean Si(111) Surface

1990 ◽  
Vol 48 (1) ◽  
pp. 306-307
Author(s):  
A. Yamanaka ◽  
H. Ohse ◽  
K. Yagi
Keyword(s):  
The Other ◽  
Current Direction ◽  
Clean Surface ◽  
Current Effect ◽  
Atomic Steps ◽  
Step Bunching ◽  
Terrace Width ◽  
Step Down ◽  
A Current

Recently current effects on clean and metal adsorbate surfaces have attracted much attention not only because of interesting phenomena but also because of practically importance in treatingclean and metal adsorbate surfaces [1-6]. In the former case, metals deposited migrate on the deposit depending on the current direction and a patch of the deposit expands on the clean surface [1]. The migration is closely related to the adsorbate structures and substrate structures including their anisotropy [2,7]. In the latter case, configurations of surface atomic steps depends on the current direction. In the case of Si(001) surface equally spaced array of monatom high steps along the [110] direction produces the 2x1 and 1x2 terraces. However, a relative terrace width of the two domain depends on the current direction; a step-up current widen terraces on which dimers are parallel to the current, while a step-down current widen the other terraces [3]. On (111) surface, a step-down current produces step bunching at temperatures between 1250-1350°C, while a step-up current produces step bunching at temperatures between 1050-1250°C [5].In the present paper, our REM observations on a current induced step bunching, started independently, are described.Our results are summarized as follows.(1) Above around 1000°C a step-up current induces step bunching. The phenomenon reverses around 1200 C; a step-down current induces step bunching. The observations agree with the previous reports [5].

The Annealing Effect of Spin-Valve-Like Ferromagnetic Tunnel Junction

1999 ◽  
Vol 23 (1_2) ◽  
pp. 49-51 ◽  
Author(s):  
H. Kikuchi ◽  
K. Kobayashi ◽  
M. Sato
Keyword(s):  
Tunnel Junction ◽  
Spin Valve ◽  
Annealing Effect
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