Multilevel Resistive-Change Memory Operation of Al-Doped ZnO Thin-Film Transistor

2016 ◽  
Vol 37 (8) ◽  
pp. 1014-1017 ◽  
Author(s):  
Won-Ho Lee ◽  
Eom-Ji Kim ◽  
Sung-Min Yoon
Keyword(s):  
Thin Film ◽  
Thin Film Transistor ◽  
Zno Thin Film ◽  
Doped Zno ◽  
Change Memory

Investigation on doping dependency of solution-processed Ga-doped ZnO thin film transistor

2008 ◽  
Vol 93 (8) ◽  
pp. 083508 ◽  
Author(s):  
Won Jun Park ◽  
Hyun Soo Shin ◽  
Byung Du Ahn ◽  
Gun Hee Kim ◽  
Seung Min Lee ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Transistor ◽  
Zno Thin Film ◽  
Solution Processed ◽  
Doped Zno

Fabrication and electrical characterization of Li–N dual doped ZnO thin film transistor

2014 ◽  
Vol 305 ◽  
pp. 474-476 ◽  
Author(s):  
D.Z. Zhou ◽  
B. Li ◽  
H.L. Wang ◽  
M. Salik ◽  
H.H. Wu ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Transistor ◽  
Electrical Characterization ◽  
Zno Thin Film ◽  
Doped Zno

Optical Properties of Nanostructured Aluminum Doped Zinc Oxide (ZnO) Thin Film for Thin Film Transistor (TFT) Application

2013 ◽  
Vol 667 ◽  
pp. 511-515 ◽  
Author(s):  
N.D. Md Sin ◽  
Mohamad Hafiz Mamat ◽  
Mohamad Rusop
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Zinc Oxide ◽  
Optical Properties ◽  
Doping Concentration ◽  
Near Infrared ◽  
Thin Film Transistor ◽  
Zno Thin Film ◽  
Aluminum Doped Zinc Oxide ◽  
Doped Zno

The properties of nanostructured aluminum (Al) doped zinc oxide (ZnO) thin film for thin film transistors (TFT) are presented. This research has been focused on optical and structural properties of Al doped ZnO thin film. The influence of Al doping concentration at 0~5 at.% on the Al doped ZnO thin film properties have been investigated. The thin films were characterized using UV-Vis-NIR spectrophotometer for optical properties. The surface morphology has been characterized using field emission scanning electron microscope (FESEM). The absorption coefficient spectra obtained from UV-Vis-NIR spectrophotometer measurement show all films have low absorbance in visible and near infrared (IR) region but have high UV absorption properties. The calculated Urbach energy indicated the defects concentrations in the thin films increase with doping concentrations The FESEM investigations shows that the nanoparticles size becomes smaller and denser as the doping concentration increase.

Two-dimensional BN-doped ZnO thin-film deposition by a thermionic vacuum arc system

2020 ◽  
Vol 31 (9) ◽  
pp. 6948-6955
Author(s):  
Mustafa Özgür ◽  
Suat Pat ◽  
Reza Mohammadigharehbagh ◽  
Uğur Demirkol ◽  
Nihan Akkurt ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Deposition ◽  
Film Deposition ◽  
Vacuum Arc ◽  
Zno Thin Film ◽  
Two Dimensional ◽  
Doped Zno ◽  
Thermionic Vacuum Arc

Preparation of Bi‐Doped ZnO Thin Film over Optical Fiber and Their Application as Detection of Ethylenediamine in an Aqueous Medium Based on the Evanescent Field Technique

2020 ◽  
Vol 217 (24) ◽  
pp. 2000537
Author(s):  
Shailendra Kr. Singh ◽  
Uttam Kr. Samanta ◽  
Anirban Dhar ◽  
Mrinmay Pal ◽  
Mukul Chandra Paul
Keyword(s):  
Thin Film ◽  
Optical Fiber ◽  
Aqueous Medium ◽  
Evanescent Field ◽  
Zno Thin Film ◽  
Field Technique ◽  
Doped Zno
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