Influence of Au-Based Metallization on the Phase Velocity of GaN on Si Surface Acoustic Wave Resonators

2016 ◽  
Vol 37 (3) ◽  
pp. 321-324 ◽  
Author(s):  
Alexandra Stefanescu ◽  
Alexandru Muller ◽  
Ioana Giangu ◽  
Adrian Dinescu ◽  
George Konstantinidis
Keyword(s):  
Acoustic Wave ◽  
Phase Velocity ◽  
Surface Acoustic Wave ◽  
Gan On Si ◽  
Acoustic Wave Resonators

Fast simulation method of Distributed Nonlinearities in Surface Acoustic Wave Resonators

2020 ◽  
Author(s):  
M Gonzalez-Rodriguez ◽  
Carlos Collado ◽  
Jordi Mateu ◽  
J.M. Gonzalez-Arbesu ◽  
Sebastian Huebner ◽  
...  
Keyword(s):  
Acoustic Wave ◽  
Surface Acoustic Wave ◽  
Simulation Method ◽  
Fast Simulation ◽  
Fast Simulation Method ◽  
Acoustic Wave Resonators

Pressure sensor based on surface acoustic wave resonators

2008 ◽  
Author(s):  
M. Benetti ◽  
D. Cannata ◽  
F. Di Pietrantonio ◽  
C. Marchiori ◽  
P. Persichetti ◽  
...  
Keyword(s):  
Acoustic Wave ◽  
Surface Acoustic Wave ◽  
Pressure Sensor ◽  
Acoustic Wave Resonators

Influence of displacement and patterning of phase shifters for piston mode operation of temperature compensated surface acoustic wave resonators on SiO2/LiNbO3 structure

2021 ◽  
Author(s):  
Keyuan Gong ◽  
Zhaohui Wu ◽  
Yu-Po Wong ◽  
Yawei Li ◽  
Qi Liang ◽  
...  
Keyword(s):  
Acoustic Wave ◽  
Surface Acoustic Wave ◽  
Transverse Mode ◽  
Phase Shifters ◽  
Design Parameters ◽  
Mode Operation ◽  
Mode Suppression ◽  
Acoustic Wave Resonators ◽  
Piston Mode

Abstract This paper discusses influence of displacement and patterning of phase shifters for piston mode operation of the temperature compensated (TC) surface acoustic wave (SAW) resonator on SiO2/LiNbO3 structure. As the phase shifters, Cu metals placed on the top surface of SiO2 are considered. First, the conventional Cu stripes are chosen, and their displacement are considered from IDT aperture edges. It is shown that achievable transverse mode suppression is almost identical when the stripe shape is adjusted for each case. Next, Cu dots are considered as patterned phase shifters. It is shown comparable transverse mode suppression is possible also for this case. However, relatively strong SAW lateral leakage occurs when they are placed above IDT fingers. These results indicate that location and pattern can be added as design parameters for the phase shifters on SiO2. It is favorable for further enhancement of total device performances.

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