Diodelike Bipolar Resistive Switching, High-Performance, and Ultralow Power Characteristics in GaO/SiNx:O Bilayer Structure

2015 ◽  
Vol 36 (10) ◽  
pp. 1024-1026 ◽  
Author(s):  
Tae Ho Lee ◽  
Ju Hyun Park ◽  
Tae Geun Kim
Keyword(s):  
Resistive Switching ◽  
High Performance ◽  
Bilayer Structure ◽  
Bipolar Resistive Switching ◽  
Power Characteristics ◽  
Ultralow Power

A high performance transparent resistive switching memory made from ZrO2/AlON bilayer structure

2016 ◽  
Vol 108 (15) ◽  
pp. 153505 ◽  
Author(s):  
Tsung-Ling Tsai ◽  
Hsiang-Yu Chang ◽  
Jesse Jen-Chung Lou ◽  
Tseung-Yuen Tseng
Keyword(s):  
Resistive Switching ◽  
High Performance ◽  
Bilayer Structure ◽  
Resistive Switching Memory ◽  
Switching Memory

High performance bipolar resistive switching memory devices based on Zn2SnO4 nanowires

Nanoscale ◽  
2012 ◽  
Vol 4 (8) ◽  
pp. 2571 ◽  
Author(s):  
Haibo Dong ◽  
Xiaoxian Zhang ◽  
Duan Zhao ◽  
Zhiqiang Niu ◽  
Qingsheng Zeng ◽  
...  
Keyword(s):  
Resistive Switching ◽  
High Performance ◽  
Memory Devices ◽  
Bipolar Resistive Switching ◽  
Resistive Switching Memory ◽  
Switching Memory

Fabrication and mechanism of high performance bipolar resistive switching device based on SrTiO3/NiO stacked heterostructure

2013 ◽  
Vol 104 ◽  
pp. 85-89 ◽  
Author(s):  
Yongdan Zhu ◽  
Meiya Li ◽  
Zhongqiang Hu ◽  
Hai Zhou ◽  
Xiaolian Liu ◽  
...  
Keyword(s):  
Resistive Switching ◽  
High Performance ◽  
Bipolar Resistive Switching ◽  
Switching Device

Bipolar Resistive Switching in the Ag/Sb2Te3/Pt Heterojunction

2021 ◽  
Author(s):  
Zhenhua Wu ◽  
Yinxiao Feng ◽  
Yan Liu ◽  
Huilie Shi ◽  
Shuai Zhang ◽  
...  
Keyword(s):  
Resistive Switching ◽  
Bipolar Resistive Switching

scholarly journals High performance, electroforming-free, thin film memristors using ionic Na0.5Bi0.5TiO3

2021 ◽  
Vol 9 (13) ◽  
pp. 4522-4531
Author(s):  
Chao Yun ◽  
Matthew Webb ◽  
Weiwei Li ◽  
Rui Wu ◽  
Ming Xiao ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Resistive Switching ◽  
Growth Temperature ◽  
High Performance ◽  
20 Nm

Interfacial resistive switching and composition-tunable RLRS are realized in ionically conducting Na0.5Bi0.5TiO3 thin films, allowing optimised ON/OFF ratio (>104) to be achieved with low growth temperature (600 °C) and low thickness (<20 nm).

scholarly journals Multi-level characteristics of TiOx transparent non-volatile resistive switching device by embedding SiO2 nanoparticles

2021 ◽  
Vol 11 (1) ◽  
Author(s):  
Sera Kwon ◽  
Min-Jung Kim ◽  
Kwun-Bum Chung
Keyword(s):  
Resistive Switching ◽  
High Performance ◽  
Sio2 Nanoparticles ◽  
Visible Range ◽  
Resistive State ◽  
Switching Device ◽  
Structural Density ◽  
Multi Level ◽  
Switching Characteristics ◽  
Switching Devices

AbstractTiOx-based resistive switching devices have recently attracted attention as a promising candidate for next-generation non-volatile memory devices. A number of studies have attempted to increase the structural density of resistive switching devices. The fabrication of a multi-level switching device is a feasible method for increasing the density of the memory cell. Herein, we attempt to obtain a non-volatile multi-level switching memory device that is highly transparent by embedding SiO2 nanoparticles (NPs) into the TiOx matrix (TiOx@SiO2 NPs). The fully transparent resistive switching device is fabricated with an ITO/TiOx@SiO2 NPs/ITO structure on glass substrate, and it shows transmittance over 95% in the visible range. The TiOx@SiO2 NPs device shows outstanding switching characteristics, such as a high on/off ratio, long retention time, good endurance, and distinguishable multi-level switching. To understand multi-level switching characteristics by adjusting the set voltages, we analyze the switching mechanism in each resistive state. This method represents a promising approach for high-performance non-volatile multi-level memory applications.

scholarly journals High-Performance Resistive Switching in Solution-Derived IGZO:N Memristors by Microwave-Assisted Nitridation

Nanomaterials ◽  
2021 ◽  
Vol 11 (5) ◽  
pp. 1081
Author(s):  
Shin-Yi Min ◽  
Won-Ju Cho
Keyword(s):  
Resistive Switching ◽  
Photoelectron Spectroscopy ◽  
High Performance ◽  
Electric Pulse ◽  
Chemical Species ◽  
Optical Absorption Coefficient ◽  
Microwave Assisted ◽  
Synthesis Strategy ◽  
Metal Insulator Metal ◽  
Switching Characteristics

In this study, we implemented a high-performance two-terminal memristor device with a metal/insulator/metal (MIM) structure using a solution-derived In-Ga-Zn-Oxide (IGZO)-based nanocomposite as a resistive switching (RS) layer. In order to secure stable memristive switching characteristics, IGZO:N nanocomposites were synthesized through the microwave-assisted nitridation of solution-derived IGZO thin films, and the resulting improvement in synaptic characteristics was systematically evaluated. The microwave-assisted nitridation of solution-derived IGZO films was clearly demonstrated by chemical etching, optical absorption coefficient analysis, and X-ray photoelectron spectroscopy. Two types of memristor devices were prepared using an IGZO or an IGZO:N nanocomposite film as an RS layer. As a result, the IGZO:N memristors showed excellent endurance and resistance distribution in the 103 repeated cycling tests, while the IGZO memristors showed poor characteristics. Furthermore, in terms of electrical synaptic operation, the IGZO:N memristors possessed a highly stable nonvolatile multi-level resistance controllability and yielded better electric pulse-induced conductance modulation in 5 × 102 stimulation pulses. These findings demonstrate that the microwave annealing process is an effective synthesis strategy for the incorporation of chemical species into the nanocomposite framework, and that the microwave-assisted nitridation improves the memristive switching characteristics in the oxide-based RS layer.

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