Study of High-k/Metal-Gate Work-Function Variation Using Rayleigh Distribution

2013 ◽  
Vol 34 (4) ◽  
pp. 532-534 ◽  
Author(s):  
Hyohyun Nam ◽  
Changhwan Shin
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Sivaramakrishnan Ramesh ◽  
Arjun Ajaykumar ◽  
Lars-Åke Ragnarsson ◽  
Laurent Breuil ◽  
Gabriel El Hajjam ◽  
...  

We studied the metal gate work function of different metal electrode and high-k dielectric combinations by monitoring the flat band voltage shift with dielectric thicknesses using capacitance–voltage measurements. We investigated the impact of different thermal treatments on the work function and linked any shift in the work function, leading to an effective work function, to the dipole formation at the metal/high-k and/or high-k/SiO2 interface. We corroborated the findings with the erase performance of metal/high-k/ONO/Si (MHONOS) capacitors that are identical to the gate stack in three-dimensional (3D) NAND flash. We demonstrate that though the work function extraction is convoluted by the dipole formation, the erase performance is not significantly affected by it.


2011 ◽  
Vol 2 (1) ◽  
pp. 11-24 ◽  
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Deepesh Ranka ◽  
Ashwani K. Rana ◽  
Rakesh Kumar Yadav ◽  
Kamalesh Yadav ◽  
Devendra Giri

2010 ◽  
Vol 87 (9) ◽  
pp. 1805-1807 ◽  
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Zilan Li ◽  
Tom Schram ◽  
Thomas Witters ◽  
Joshua Tseng ◽  
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Aradhana Gautam ◽  
Abhishek Mishra ◽  
Meenakshi Bhaisare ◽  
...  

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Vol 80 ◽  
pp. 280-283 ◽  
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G. Sjöblom ◽  
L. Pantisano ◽  
T. Schram ◽  
J. Olsson ◽  
V. Afanas’ev ◽  
...  

2006 ◽  
Author(s):  
Atsushi Kuriyama ◽  
Olivier Faynot ◽  
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Amelie Tozzo ◽  
Laurence Clerc ◽  
...  

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