Enhanced Electrical Characteristics of AlGaN-Based SBD With In Situ Deposited Silicon Carbon Nitride Cap Layer

2012 ◽  
Vol 33 (4) ◽  
pp. 492-494 ◽  
Author(s):  
Jae-Hoon Lee ◽  
Jae-Hyun Jeong ◽  
Jung-Hee Lee
Keyword(s):  
Carbon Nitride ◽  
Electrical Characteristics ◽  
Silicon Carbon ◽  
Cap Layer ◽  
Silicon Carbon Nitride

scholarly journals Improved Noise and Device Performances of AlGaN/GaN HEMTs with In Situ Silicon Carbon Nitride (SiCN) Cap Layer

Crystals ◽  
2021 ◽  
Vol 11 (5) ◽  
pp. 489
Author(s):  
Yeo-Jin Choi ◽  
Jae-Hoon Lee ◽  
Jin-Seok Choi ◽  
Sung-Jin An ◽  
Young-Min Hwang ◽  
...  
Keyword(s):  
Carbon Nitride ◽  
Surface Passivation ◽  
Drain Current ◽  
Trap Density ◽  
Frequency Noise ◽  
High Electron ◽  
Silicon Carbon ◽  
Cap Layer ◽  
Silicon Carbon Nitride

We investigated the effects of in situ silicon carbon nitride (SiCN) cap layer of AlGaN/GaN high-electron mobility transistors (HEMTs) on DC, capacitance-voltage (C-V) and low-frequency noise (LFN). The proposed device with SiCN cap layer exhibited enhanced drain current, reduced gate leakage current, low interface trap density (Dit), and high on/off ratio thanks to the passivation effect, compared to the device without SiCN cap layer. Both devices clearly showed 1/f noise behavior with carrier number fluctuations (CNF), regardless of the existence of SiCN cap layer. The proposed device presented the relative low trap density (Nit) and reduced access noise due to the effective surface passivation in source-drain access region compared to the device without SiCN cap layer. From the improved DC, C-V and noise results of the proposed device, the in situ SiCN cap layer plays an important role in the passivation layer and gate oxide layer in AlGaN/GaN HEMT.

Structural, Optical and Electrical Characteristics of Silicon Carbon Nitride

1999 ◽  
Vol 592 ◽  
Author(s):  
L. C. Chen ◽  
C. T. Wu ◽  
C.-Y Wen ◽  
J.-J. Wu ◽  
W. T. Liu ◽  
...  
Keyword(s):  
Carbon Nitride ◽  
Ion Beam ◽  
Interface Roughness ◽  
Electrical Characteristics ◽  
Ion Beam Sputtering ◽  
Electrical Measurements ◽  
Sputtering Deposition ◽  
Silicon Carbon ◽  
Beam Sputtering ◽  
Silicon Carbon Nitride

ABSTRACTDielectric layers of thin silicon carbon nitride (SiCxNy) films have been prepared by ion beam sputtering deposition (IBD). For submicron metal-insulator-Si (MIS) based device applications, a dielectric of low interface roughness, increased capacitance/area with lower leakage on decreasing scale is highly desirable. We address these aspects for the IBD SiCxNy films on p-type Si and present their structural, optical and electrical characteristics as a function of the deposition conditions. Ultraviolet-visible transmittance and spectroscopic ellipsometry were employed to study the optical properties of the SiCxNy films. For electrical measurements, Al gate electrodes were fabricated on SiCxNy films to form metal-nitride-silicon (MNS) diodes. Characteristic I-V and photoconductivity measurements of the MNS are presented.

Hard plasma chemical coatings based on silicon carbon nitride

2007 ◽  
Vol 46 (11-12) ◽  
pp. 543-549 ◽  
Author(s):  
L. A. Ivashchenko ◽  
V. I. Ivashchenko ◽  
O. K. Porada ◽  
S. M. Dub ◽  
P. L. Skrinskii ◽  
...  
Keyword(s):  
Carbon Nitride ◽  
Plasma Chemical ◽  
Silicon Carbon ◽  
Silicon Carbon Nitride

PECVD synthesis, optical and mechanical properties of silicon carbon nitride films

2015 ◽  
Vol 339 ◽  
pp. 102-108 ◽  
Author(s):  
Evgeniya Ermakova ◽  
Yurii Rumyantsev ◽  
Artur Shugurov ◽  
Alexey Panin ◽  
Marina Kosinova
Keyword(s):  
Mechanical Properties ◽  
Carbon Nitride ◽  
Silicon Carbon ◽  
Optical And Mechanical Properties ◽  
Silicon Carbon Nitride

Silicon Carbon Nitride Thin Films Produced by Magnetron Reactive Sputtering Physical Vapour Deposition: Structural, Chemical and Mechanical Characterisation

2017 ◽  
Vol 33 (1-2) ◽  
pp. 44
Author(s):  
P. Kouakou ◽  
P. Yoboue ◽  
B. Ouattara ◽  
V. Hody ◽  
P. Choquet ◽  
...  
Keyword(s):  
Carbon Nitride ◽  
Vapour Deposition ◽  
Reactive Sputtering ◽  
Mechanical Characterisation ◽  
Silicon Carbon ◽  
Film Adhesion ◽  
Experimental Parameters ◽  
Nitrogen Percentage ◽  
Silicon Carbon Nitride

Amorphous silicon carbon nitride films were deposited on silicon and WC-Co substrates by magnetron reactive sputtering in Ar/N<sub>2</sub> gas mixture with carbon and silicon targets. The influence of experimental parameters on the films morphological, structural and mechanical properties was studied. The general morphology of the film is observed by SEM and TEM. EDXS and FTIR were used to determine the film chemical composition and the nature of chemical bonding. It was observed that C≡N bonds and nitrogen percentage in the film are promoted when the substrate is biased. The role of an underlayer and the influence of its nature on the film adhesion on WC/Co substrates were also studied. In this case, nanoscratch tests showed that a SiNx thin film could be an appropriate underlayer.

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