MIM Capacitors With Crystalline-$\hbox{TiO}_{2}/ \hbox{SiO}_{2}$ Stack Featuring High Capacitance Density and Low Voltage Coefficient

2012 ◽  
Vol 33 (1) ◽  
pp. 104-106 ◽  
Author(s):  
Yung-Hsien Wu ◽  
Wei-Yuan Ou ◽  
Chia-Chun Lin ◽  
Jia-Rong Wu ◽  
Min-Lin Wu ◽  
...  
Keyword(s):  
Low Voltage ◽  
Capacitance Density ◽  
High Capacitance ◽  
Voltage Coefficient ◽  
Mim Capacitors

Mim Capacitors with HfO2 and HfAlOx for Si RF and Analog Applications

2003 ◽  
Vol 766 ◽  
Author(s):  
Xiongfei Yu ◽  
Chunxiang Zhu ◽  
Hang Hu ◽  
Albert Chin ◽  
M.F. Li ◽  
...  
Keyword(s):  
Leakage Current ◽  
Low Loss ◽  
Small Frequency ◽  
Capacitance Density ◽  
High Capacitance ◽  
Low Leakage ◽  
Low Leakage Current ◽  
Al2o3 Concentration ◽  
Silicon Analog ◽  
Mim Capacitors

AbstractThe MIM capacitors with HfO2 and HfAlOx are investigated for Si RF and analog applications. The results show that both the capacitance density and voltage coefficients of capacitance (VCCs) increase with decreasing the HfO2 thickness. A high capacitance density of 13 fF/μm2with a low leakage current and a VCC of 607 ppm/V is obtained for 10 nm HfO2 MIM capacitor, which can meet the requirement of the ITRS roadmap by 2007 for silicon RF application. On the other hand, it was found that both the capacitance density and voltage coefficients of capacitance (VCC) values of the HfAlOx MIM capacitors decrease with increasing Al2O3 concentration. The results show that HfAlOx MIM capacitor with an Al2O3 mole fraction of 0.14 is optimized. It provides a high capacitance density of 3.5 fF/μm2 and a low VCC of μ140 ppm/V2. Also, small frequency dependence, low leakage current, and low loss tangent are obtained. Thus, the HfAlOx MIM capacitor with an Al2O3 mole ratio of 0.14 is very suitable for use in silicon analog applications.

Analysis of reliability characteristics of high capacitance density MIM capacitors with SiO2–HfO2–SiO2 dielectrics

2011 ◽  
Vol 88 (12) ◽  
pp. 3389-3392 ◽  
Author(s):  
Sang-Uk Park ◽  
Chang-Yong Kang ◽  
Hyuk-Min Kwon ◽  
Byung-Seok Park ◽  
Won-Ho Choi ◽  
...  
Keyword(s):  
Capacitance Density ◽  
High Capacitance ◽  
Reliability Characteristics ◽  
Mim Capacitors

Comparison of Reactively Sputtered HfO2 and HfSixOy Dielectrics for High Density Metal-Insulator-Metal Capacitor Applications

2011 ◽  
Vol 284-286 ◽  
pp. 893-899
Author(s):  
Hui Xu ◽  
Li Feng Zhang ◽  
Qiu Xiang Zhang ◽  
Shi Jin Ding ◽  
David Wei Zhang
Keyword(s):  
Photoelectron Spectroscopy ◽  
Oxygen Vacancies ◽  
Chemical Bonds ◽  
Metal Insulator ◽  
Capacitance Density ◽  
X Ray ◽  
Voltage Coefficient ◽  
Metal Insulator Metal ◽  
Si Content ◽  
Mim Capacitors

The reactively sputtered HfO2 and HfSixOy dielectrics have been investigated comparatively for metal-insulator-metal (MIM) capacitor applications. X-ray photoelectron spectroscopy analyses reveal the presence of Hf-O, Hf-O-Si and Si-O chemical bonds in the HfSixOy films as well as lots of oxygen vacancies. The relative concentrations of Hf-O-Si and Si-O bonds increase with an increment of the power applied to the Si target. Further, it is found that the quadratic voltage coefficient of MIM capacitor decreases with increasing the Si content in the HfSixOy dielectric in despite of a decrease in the resulting capacitance density. The HfSixOy dielectric MIM capacitors with a capacitance density of ~8.4fF/μm2 exhibit a quadratic voltage coefficient of 1840 ppm/V2 at 100kHz, which is much smaller than 2750 ppm/V2 for the HfO2 dielectric MIM capacitors with a density of ~11.8fF/μm2.

Sign in / Sign up

Export Citation Format

Share Document