Device Characterization of p/i/n Thin-Film Phototransistor for Photosensor Applications

2010 ◽  
Vol 31 (9) ◽  
pp. 984-986 ◽  
Author(s):  
Mutsumi Kimura ◽  
Yuta Miura ◽  
Takeshi Ogura ◽  
Shiro Ohno ◽  
Tomohisa Hachida ◽  
...  
Keyword(s):  
Thin Film ◽  
Device Characterization

Device Characterization of Thin-Film Phototransistors for Photosensor Applications

2008 ◽  
Vol E91-C (10) ◽  
pp. 1557-1563 ◽  
Author(s):  
M. KIMURA ◽  
Y. NISHIZAKI ◽  
T. YAMASHITA ◽  
T. SHIMA ◽  
T. HACHIDA
Keyword(s):  
Thin Film ◽  
Device Characterization

Device characterization of an electron-beam-switched thin-film ZnS:Mn electroluminescent faceplate

1981 ◽  
Vol 28 (6) ◽  
pp. 708-719 ◽  
Author(s):  
O. Sahni ◽  
P.M. Alt ◽  
D.B. Dove ◽  
W.E. Howard ◽  
D.J. McClure
Keyword(s):  
Thin Film ◽  
Electron Beam ◽  
Device Characterization

Characterization of Y-Ba-Cu-O films grown on silicon substrates by sequential evaporation

1988 ◽  
Vol 46 ◽  
pp. 866-867
Author(s):  
E. L. Hall ◽  
A. Mogro-Campero ◽  
L. G. Turner ◽  
N. Lewis
Keyword(s):  
Thin Film ◽  
Thin Film Deposition ◽  
Superconducting Films ◽  
Electron Beam Evaporation ◽  
Film Deposition ◽  
Silicon Substrates ◽  
Superconducting Properties ◽  
Sequential Electron ◽  
Thin Superconducting Films

There is great interest in the growth of thin superconducting films of YBa2Cu3Ox on silicon, since this is a necessary first step in the use of this superconductor in a variety of possible electronic applications including interconnects and hybrid semiconductor/superconductor devices. However, initial experiments in this area showed that drastic interdiffusion of Si into the superconductor occurred during annealing if the Y-Ba-Cu-O was deposited direcdy on Si or SiO2, and this interdiffusion destroyed the superconducting properties. This paper describes the results of the use of a zirconia buffer layer as a diffusion barrier in the growth of thin YBa2Cu3Ox films on Si. A more complete description of the growth and characterization of these films will be published elsewhere.Thin film deposition was carried out by sequential electron beam evaporation in vacuum onto clean or oxidized single crystal Si wafers. The first layer evaporated was 0.4 μm of zirconia.

Microstructural and fractographic characterization of B4C-Al cermets tested under dynamic and static loading

1989 ◽  
Vol 47 ◽  
pp. 562-563
Author(s):  
Gyeung Ho Kim ◽  
Mehmet Sarikaya ◽  
D. L. Milius ◽  
I. A. Aksay
Keyword(s):  
Thin Film ◽  
Mechanical Properties ◽  
Fracture Toughness ◽  
Static Loading ◽  
Carbon Deposition ◽  
Full Density ◽  
Unique Combination ◽  
Strong Component ◽  
Reaction Products

Cermets are designed to optimize the mechanical properties of ceramics (hard and strong component) and metals (ductile and tough component) into one system. However, the processing of such systems is a problem in obtaining fully dense composite without deleterious reaction products. In the lightweight (2.65 g/cc) B4C-Al cermet, many of the processing problems have been circumvented. It is now possible to process fully dense B4C-Al cermet with tailored microstructures and achieve unique combination of mechanical properties (fracture strength of over 600 MPa and fracture toughness of 12 MPa-m1/2). In this paper, microstructure and fractography of B4C-Al cermets, tested under dynamic and static loading conditions, are described.The cermet is prepared by infiltration of Al at 1150°C into partially sintered B4C compact under vacuum to full density. Fracture surface replicas were prepared by using cellulose acetate and thin-film carbon deposition. Samples were observed with a Philips 3000 at 100 kV.

Combinatorial Fabrication and High-Throughput Characterization of Thin Film Metal Oxide Libraries for Solar water Splitting

2018 ◽  
Author(s):  
Alfred Ludwig ◽  
Mona Nowak ◽  
Swati Kumari ◽  
Helge S. Stein ◽  
Ramona Gutkowski ◽  
...  
Keyword(s):  
Thin Film ◽  
Metal Oxide ◽  
Water Splitting ◽  
High Throughput ◽  
Solar Water ◽  
Solar Water Splitting
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