scholarly journals A Single-Crystal-Silicon Bulk-Acoustic-Mode Microresonator Oscillator

2008 ◽  
Vol 29 (7) ◽  
pp. 701-703 ◽  
Author(s):  
Joshua E.-Y. Lee ◽  
Behraad Bahreyni ◽  
Yong Zhu ◽  
Ashwin A. Seshia
Keyword(s):  
Single Crystal ◽  
Single Crystal Silicon ◽  
Acoustic Mode ◽  
Crystal Silicon ◽  
Silicon Bulk

A high Q micromachined single crystal silicon bulk mode resonator with pre-etched cavity

2011 ◽  
Vol 18 (1) ◽  
pp. 25-30 ◽  
Author(s):  
Guoqiang Wu ◽  
Dehui Xu ◽  
Bin Xiong ◽  
Yuelin Wang
Keyword(s):  
Single Crystal ◽  
Single Crystal Silicon ◽  
Crystal Silicon ◽  
High Q ◽  
Bulk Mode ◽  
Silicon Bulk ◽  
Mode Resonator

Ultrasensitive mass balance based on a bulk acoustic mode single-crystal silicon resonator

2007 ◽  
Vol 91 (23) ◽  
pp. 234103 ◽  
Author(s):  
J. E.-Y. Lee ◽  
B. Bahreyni ◽  
Y. Zhu ◽  
A. A. Seshia
Keyword(s):  
Single Crystal ◽  
Mass Balance ◽  
Single Crystal Silicon ◽  
Acoustic Mode ◽  
Crystal Silicon ◽  
Silicon Resonator

Aero-Thermodynamic Consideration of Single-Crystal-Silicon Premixed-Fuel Microscale Can Combustor

2012 ◽  
Vol 134 (7) ◽  
Author(s):  
Moriaki Namura ◽  
Toshiyuki Toriyama
Keyword(s):  
Single Crystal ◽  
Physical Interpretation ◽  
Burning Velocity ◽  
Single Crystal Silicon ◽  
Velocity Model ◽  
Flame Stabilization ◽  
Crystal Silicon ◽  
Thermodynamic Consideration ◽  
Stable Combustion ◽  
Silicon Bulk

This paper describes the aero-thermodynamic design, microfabrication and combustion test results for a single-crystal-silicon premixed-fuel microscale can combustor. The combustion chamber volume is 277 mm3, and the microscale can combustor was fabricated by silicon bulk micromachining technology. Hydrogen fuel-air premixing was performed in the combustion test. The operation space in which stable combustion occurred was experimentally determined from the combustion temperature and efficiency for various mass flow rates and equivalence ratios. The expression for the combustion efficiency under conditions where the overall rate of heat release is limited by the chemical kinetics was consistent with the burning velocity model. The flame stabilization, the range of equivalence ratios and the maximum air velocity that the combustor can tolerate before flame extinction occurs were in agreement with the well - stirred reactor (WSR) and combustion loading parameter (CLP) models. A proposed aero-thermodynamic design approach based on these three models provides a physical interpretation of the experimental results in the operation space of stable combustion. Furthermore, this approach provides a unified physical interpretation of the stable combustion operation spaces of microscale combustors with various dimensions and configurations. Therefore, it is demonstrated that the proposed aero-thermodynamic approach has an important role in predicting the preliminary aerodynamic design performances of new microscale combustors.

Experimental Study on Aerodynamics of Microelectromechanical Systems Based Single-Crystal-Silicon Microscale Supersonic Nozzle

2013 ◽  
Vol 135 (8) ◽  
Author(s):  
Moriaki Namura ◽  
Toshiyuki Toriyama
Keyword(s):  
New York ◽  
Single Crystal ◽  
Microelectromechanical Systems ◽  
Supersonic Nozzle ◽  
Single Crystal Silicon ◽  
Internal Flow ◽  
Nozzle Flow ◽  
Crystal Silicon ◽  
Rarefied Flow ◽  
Silicon Bulk

In this paper, the design, microfabrication, and direct measurement of the static pressure distribution for the aerodynamics of a single-crystal-silicon microscale supersonic nozzle are described. The microscale supersonic nozzle has a convergent–divergent section and a throat area of 100μm × 300μm. The microscale supersonic nozzle was fabricated by silicon bulk micromachining technology. The degree of the rarefaction of nozzle flow was determined by the Knudsen number (Kn). The operation envelope that determines whether the continuum or rarefied flow assumption is appropriate can be expressed as a function of Kn and related parameters. The effect of nonadiabatic operation on microscale nozzle flow was investigated on the basis of wall heat transfer. These physical correlations were taken into account for the classical Shapiro's equations to analyze the microscale nozzle flow aerodynamics (Shapiro, 1953, The Dynamics and Thermodynamics of Compressible Fluid Flow, Ronald, New York, Chap. 7,8; Greitzer et al., 2006, Internal Flow, Cambridge University, Cambridge, UK, Chap. 2,10). Furthermore, the solutions of Shapiro's equations were compared with the experimental results by the authors and other research institutions in order to demonstrate the validity of the proposed aerodynamics design concept for microscale continuum flow.

scholarly journals Novel Gas Sensor Arrays Based on High-Q SAM-Modified Piezotransduced Single-Crystal Silicon Bulk Acoustic Resonators

Sensors ◽  
2017 ◽  
Vol 17 (7) ◽  
pp. 1507 ◽  
Author(s):  
Yuan Zhao ◽  
Qingrui Yang ◽  
Ye Chang ◽  
Wei Pang ◽  
Hao Zhang ◽  
...  
Keyword(s):  
Single Crystal ◽  
Gas Sensor ◽  
Sensor Arrays ◽  
Single Crystal Silicon ◽  
Crystal Silicon ◽  
Acoustic Resonators ◽  
High Q ◽  
Silicon Bulk ◽  
Gas Sensor Arrays

Analysis of Silicon-On-Insulator Structures Formed By Oxygen Ion Implantation

1985 ◽  
Vol 43 ◽  
pp. 300-301
Author(s):  
N. Lewis ◽  
E. L. Hall ◽  
A. Mogro-Campero ◽  
R. P. Love
Keyword(s):  
Ion Implantation ◽  
Single Crystal ◽  
Single Crystal Silicon ◽  
Silicon Layer ◽  
Device Fabrication ◽  
Silicon On Insulator ◽  
High Dose ◽  
Crystal Silicon ◽  
Oxygen Ion ◽  
Oxygen Ion Implantation

The formation of buried oxide structures in single crystal silicon by high-dose oxygen ion implantation has received considerable attention recently for applications in advanced electronic device fabrication. This process is performed in a vacuum, and under the proper implantation conditions results in a silicon-on-insulator (SOI) structure with a top single crystal silicon layer on an amorphous silicon dioxide layer. The top Si layer has the same orientation as the silicon substrate. The quality of the outermost portion of the Si top layer is important in device fabrication since it either can be used directly to build devices, or epitaxial Si may be grown on this layer. Therefore, careful characterization of the results of the ion implantation process is essential.

Sign in / Sign up

Export Citation Format

Share Document