High-Gain Low Turn-On Voltage AlGaAs/GaAsNSb/GaAs Heterojunction Bipolar Transistors Grown by Molecular Beam Epitaxy

K. L. Lew; S. F. Yoon; H. Wang; S. Wicaksono; J. A. Gupta; S. P. McAlister

doi:10.1109/led.2007.910000

High-Gain Low Turn-On Voltage AlGaAs/GaAsNSb/GaAs Heterojunction Bipolar Transistors Grown by Molecular Beam Epitaxy

IEEE Electron Device Letters ◽

10.1109/led.2007.910000 ◽

2007 ◽

Vol 28 (12) ◽

pp. 1083-1085 ◽

Cited By ~ 4

Author(s):

K. L. Lew ◽

S. F. Yoon ◽

H. Wang ◽

S. Wicaksono ◽

J. A. Gupta ◽

...

Keyword(s):

Molecular Beam Epitaxy ◽

Heterojunction Bipolar Transistors ◽

Molecular Beam ◽

High Gain ◽

Bipolar Transistors ◽

Turn On

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High-gain InAlAs/InGaAs npn single heterojunction bipolar transistors grown by molecular beam epitaxy

LEOS 1992 Summer Topical Meeting Digest on Broadband Analog and Digital Optoelectronics, Optical Multiple Access Networks, Integrated Optoelectronics, and Smart Pixels ◽

10.1109/iciprm.1992.235671 ◽

2003 ◽

Author(s):

H.-H. Lin ◽

C.-H. Huang

Keyword(s):

Molecular Beam Epitaxy ◽

Heterojunction Bipolar Transistors ◽

Molecular Beam ◽

High Gain ◽

Bipolar Transistors

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High Gain Npn AlGaAs/GaAs Heterojunction Bipolar Transistors Prepared by Molecular Beam Epitaxy

Japanese Journal of Applied Physics ◽

10.1143/jjap.31.l385 ◽

1992 ◽

Vol 31 (Part 2, No. 4A) ◽

pp. L385-L387 ◽

Cited By ~ 1

Author(s):

Chung-Chang Wu ◽

Si-Chen Lee ◽

Hao-Hsiung Lin

Keyword(s):

Molecular Beam Epitaxy ◽

Heterojunction Bipolar Transistors ◽

Molecular Beam ◽

High Gain ◽

Bipolar Transistors

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High-gain Al0.48In0.52As/Ga0.53As vertical n-p-n heterojunction bipolar transistors grown by molecular-beam epitaxy

IEEE Electron Device Letters ◽

10.1109/edl.1983.25772 ◽

1983 ◽

Vol 4 (10) ◽

pp. 383-385 ◽

Cited By ~ 49

Author(s):

R.J. Malik ◽

J.R. Hayes ◽

F. Capasso ◽

K. Alavi ◽

A.Y. Cho

Keyword(s):

Molecular Beam Epitaxy ◽

Heterojunction Bipolar Transistors ◽

Molecular Beam ◽

High Gain ◽

Bipolar Transistors

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High-gain n-p-n and p-n-p InGaAs/InAlAs double-heterojunction bipolar transistors with InAs cap layers by molecular-beam epitaxy

IEEE Transactions on Electron Devices ◽

10.1109/16.8869 ◽

1988 ◽

Vol 35 (12) ◽

pp. 2445-2446 ◽

Cited By ~ 2

Author(s):

C.K. Peng ◽

T. Won ◽

J. Chen ◽

C. Litton ◽

H. Morkoc

Keyword(s):

Molecular Beam Epitaxy ◽

Heterojunction Bipolar Transistors ◽

Molecular Beam ◽

High Gain ◽

Bipolar Transistors ◽

Double Heterojunction

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Molecular Beam Epitaxy of Ga0.99Be0.01As for very high Speed Heterojunction Bipolar Transistors

Properties of Impurity States in Superlattice Semiconductors - NATO ASI Series ◽

10.1007/978-1-4684-5553-3_3 ◽

1988 ◽

pp. 19-28 ◽

Cited By ~ 2

Author(s):

J. L. Liévin ◽

F. Alexandre ◽

C. Dubon-Chevallier

Keyword(s):

Molecular Beam Epitaxy ◽

Heterojunction Bipolar Transistors ◽

High Speed ◽

Molecular Beam ◽

Bipolar Transistors ◽

Very High

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Fully Strained Heavily Carbon-Doped GaAs Grown by Gas-Source Molecular Beam Epitaxy Using Carbontetrabromide and Its Application to InGaP/GaAs Heterojunction Bipolar Transistors

Japanese Journal of Applied Physics ◽

10.1143/jjap.36.1866 ◽

1997 ◽

Vol 36 (Part 1, No. 3B) ◽

pp. 1866-1868 ◽

Cited By ~ 11

Author(s):

Kiyoshi Ouchi ◽

Tomoyoshi Mishima ◽

Kazuhiro Mochizuki ◽

Tohru Oka ◽

Tomonori Tanoue

Keyword(s):

Molecular Beam Epitaxy ◽

Heterojunction Bipolar Transistors ◽

Molecular Beam ◽

Bipolar Transistors ◽

Carbon Doped ◽

Gas Source

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Electrical Characterization of SiGe Heterojunction Bipolar Transistors (HBTs) Formed by Molecular Beam Epitaxy (MBE)

Condensed Systems of Low Dimensionality - NATO ASI Series ◽

10.1007/978-1-4684-1348-9_51 ◽

1991 ◽

pp. 669-674

Author(s):

D. J. Godfrey

Keyword(s):

Molecular Beam Epitaxy ◽

Heterojunction Bipolar Transistors ◽

Molecular Beam ◽

Electrical Characterization ◽

Bipolar Transistors

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High performance GaAsSb∕InP double heterojunction bipolar transistors grown by gas-source molecular beam epitaxy

Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena ◽

10.1116/1.2190678 ◽

2006 ◽

Vol 24 (3) ◽

pp. 1564 ◽

Cited By ~ 2

Author(s):

Bing-Ruey Wu ◽

Benjamin F. Chu-Kung ◽

Milton Feng ◽

K. Y. Cheng

Keyword(s):

Molecular Beam Epitaxy ◽

Heterojunction Bipolar Transistors ◽

High Performance ◽

Molecular Beam ◽

Bipolar Transistors ◽

Gas Source ◽

Double Heterojunction

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GaAs/AlGaAs heterojunction bipolar transistors with a base doping 10[sup 20] cm[sup −3] grown by solid-source molecular beam epitaxy using CBr[sub 4]

Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena ◽

10.1116/1.590224 ◽

1998 ◽

Vol 16 (3) ◽

pp. 972 ◽

Cited By ~ 6

Author(s):

M. Micovic

Keyword(s):

Molecular Beam Epitaxy ◽

Heterojunction Bipolar Transistors ◽

Molecular Beam ◽

Bipolar Transistors ◽

Base Doping

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Characteristics of pnp InGaAlAs/InGaAs heterojunction bipolar transistors grown by molecular beam epitaxy

LEOS 1992 Summer Topical Meeting Digest on Broadband Analog and Digital Optoelectronics, Optical Multiple Access Networks, Integrated Optoelectronics, and Smart Pixels ◽

10.1109/iciprm.1992.235673 ◽

2003 ◽

Author(s):

A. Dodabalapur ◽

T.Y. Chang

Keyword(s):

Molecular Beam Epitaxy ◽

Heterojunction Bipolar Transistors ◽

Molecular Beam ◽

Bipolar Transistors

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