Advanced HfTaON/SiO/sub 2/ gate stack with high mobility and low leakage current for low-standby-power application

2006 ◽  
Vol 27 (6) ◽  
pp. 498-501 ◽  
Author(s):  
Xiongfei Yu ◽  
Mingbin Yu ◽  
Chunxiang Zhu
Keyword(s):  
Leakage Current ◽  
High Mobility ◽  
Gate Stack ◽  
Low Leakage ◽  
Low Leakage Current ◽  
Standby Power ◽  
Power Application

scholarly journals Quantum Simulation of C-V and I-V Characteristics in Ge and III-V Materials/High-κ MOS Devices

2009 ◽  
Vol 1194 ◽  
Author(s):  
Mathieu Moreau ◽  
Daniela Munteanu ◽  
Jean-Luc Autran ◽  
Florence Bellenger ◽  
Jérome Mitard ◽  
...  
Keyword(s):  
Leakage Current ◽  
High Mobility ◽  
Quantum Simulation ◽  
Gate Stack ◽  
Simulation Code ◽  
Poisson Equations ◽  
Low Leakage ◽  
Mos Devices ◽  
Low Leakage Current ◽  
Dimensional Simulation

AbstractWe present a one-dimensional simulation study of the capacitance-voltage (C-V) and current-voltage (I-V) characteristics in MOS devices with high mobility semiconductors (Ge and III-V materials) and non-conventional gate stack with high-κ dielectrics. The C-V quantum simulation code self-consistently solves the Schrödinger and Poisson equations and the electron transport through the gate stack is computed using the non-equilibrium Green’s function formalism (NEGF). Simulated C-V characteristics are successfully confronted to experimental data for various MOS structures with different semiconductors and dielectric stacks. Simulation of I-V characteristics reveals that gate leakage current strongly depends on gate stacks and substrate materials and predicts low leakage current for future CMOS devices with high mobility materials and high-κ dielectrics.

HfO2∕HfSixOy high-K gate stack with very low leakage current for low-power poly-Si gated CMOS application

2003 ◽  
Vol 39 (8) ◽  
pp. 692 ◽  
Author(s):  
C.W. Yang ◽  
Y.K. Fang ◽  
S.F. Chen ◽  
M.F. Wang ◽  
T.H. Hou ◽  
...  
Keyword(s):  
Low Power ◽  
Leakage Current ◽  
Gate Stack ◽  
Low Leakage ◽  
Low Leakage Current ◽  
High K

1200-V JBS Diodes with Low Threshold Voltage and Low Leakage Current

2008 ◽  
Vol 600-603 ◽  
pp. 939-942 ◽  
Author(s):  
Takeo Yamamoto ◽  
Jun Kojima ◽  
Takeshi Endo ◽  
Eiichi Okuno ◽  
Toshio Sakakibara ◽  
...  
Keyword(s):  
Leakage Current ◽  
Schottky Diode ◽  
Threshold Voltage ◽  
Reverse Bias ◽  
Electrical Characteristics ◽  
Low Leakage ◽  
Forward Current ◽  
Low Leakage Current ◽  
Low Threshold ◽  
Power Application

4H-SiC SBDs have been developed by many researchers and commercialized for power application devices in recent years. At present time, the issues of an SiC-SBD are lower on-state current and a relatively larger-leakage current at the reverse bias than Si-PN diodes. A JBS (Junction Barrier Schottky) diode was proposed as a structure to realize a lower leakage current. We simulated the electrical characteristics of JBS diodes, where the Schottky electrode was made of molybdenum in order to optimize its performance. We fabricated JBS diodes based on the simulation with a diameter of 3.9mm (11.9 mm2). The JBS diode has a lower threshold voltage of 0.45 V, a large forward current of 40 A at Vf = 2.5V and a high breakdown voltage of 1660 V. Furthermore, the leakage current at 1200 V was remarkably low (Ir = 20 nA).

Low leakage current and High mobility Ultra-thin-body InGaSb p-FETs

2018 ◽  
Author(s):  
R. IlPyo ◽  
Kim SangHyeon ◽  
H. JaeHoon ◽  
G. Dae-Myeong ◽  
K.Seong Kwang ◽  
...  
Keyword(s):  
Leakage Current ◽  
High Mobility ◽  
Thin Body ◽  
Low Leakage ◽  
Low Leakage Current

Formation of HfSiON/SiO/sub 2//Si-substrate gate stack with low leakage current for high-performance high-/spl kappa/ MISFETs

2006 ◽  
Vol 53 (4) ◽  
pp. 923-925 ◽  
Author(s):  
M. Yamaguchi ◽  
T. Sakoda ◽  
H. Minakata ◽  
Shiqin Xiao ◽  
Y. Morisaki ◽  
...  
Keyword(s):  
Leakage Current ◽  
High Performance ◽  
Si Substrate ◽  
Gate Stack ◽  
Low Leakage ◽  
Low Leakage Current

High nonlinearity and low leakage current SnO2 varistor ceramics by co-doping with yttrium and tantalum

2021 ◽  
Vol 285 ◽  
pp. 129120
Author(s):  
Wenxin Liang ◽  
Hongfeng Zhao ◽  
Xiaoji Meng ◽  
Shaohua Fan ◽  
Qingyun Xie
Keyword(s):  
Leakage Current ◽  
Co Doping ◽  
High Nonlinearity ◽  
Low Leakage ◽  
Low Leakage Current

Development of high k/III-V (InGaAs, InAs, InSb) structures for future low power, high speed device applications

2013 ◽  
Vol 1538 ◽  
pp. 291-302
Author(s):  
Edward Yi Chang ◽  
Hai-Dang Trinh ◽  
Yueh-Chin Lin ◽  
Hiroshi Iwai ◽  
Yen-Ku Lin
Keyword(s):  
Low Power ◽  
Leakage Current ◽  
High Speed ◽  
High Performance ◽  
Gate Oxide ◽  
Chemical Cleaning ◽  
Low Leakage ◽  
Low Leakage Current ◽  
High K ◽  
Cleaning Methods

ABSTRACTIII-V compounds such as InGaAs, InAs, InSb have great potential for future low power high speed devices (such as MOSFETs, QWFETs, TFETs and NWFETs) application due to their high carrier mobility and drift velocity. The development of good quality high k gate oxide as well as high k/III-V interfaces is prerequisite to realize high performance working devices. Besides, the downscaling of the gate oxide into sub-nanometer while maintaining appropriate low gate leakage current is also needed. The lack of high quality III-V native oxides has obstructed the development of implementing III-V based devices on Si template. In this presentation, we will discuss our efforts to improve high k/III-V interfaces as well as high k oxide quality by using chemical cleaning methods including chemical solutions, precursors and high temperature gas treatments. The electrical properties of high k/InSb, InGaAs, InSb structures and their dependence on the thermal processes are also discussed. Finally, we will present the downscaling of the gate oxide into sub-nanometer scale while maintaining low leakage current and a good high k/III-V interface quality.

Barium Zirconate Nickelate as the Gate Dielectric for Low-Leakage Current Organic Transistors

2018 ◽  
Vol 65 (2) ◽  
pp. 680-686 ◽  
Author(s):  
Cheng-Jung Lee ◽  
Ke-Jing Lee ◽  
Yu-Chi Chang ◽  
Li-Wen Wang ◽  
Der-Wei Chou ◽  
...  
Keyword(s):  
Leakage Current ◽  
Gate Dielectric ◽  
Organic Transistors ◽  
Barium Zirconate ◽  
Low Leakage ◽  
Low Leakage Current
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