An assessment of single-electron effects in multiple-gate SOI MOSFETs with 1.6-nm gate oxide near room temperature
2006 ◽
Vol 27
(3)
◽
pp. 182-184
◽
2001 ◽
Vol 40
(Part 1, No. 2A)
◽
pp. 447-451
◽
Keyword(s):
Keyword(s):
1998 ◽
Vol 287-288
◽
pp. 477-478
Keyword(s):
Keyword(s):