Highly thermal robust NiSi for nanoscale MOSFETs utilizing a novel hydrogen plasma immersion ion implantation and Ni-Co-TiN tri-layer

2005 ◽  
Vol 26 (2) ◽  
pp. 90-92 ◽  
Author(s):  
Jang-Gn Yun ◽  
Soon-Young Oh ◽  
Bin-Feng Huang ◽  
Hee-Hwan Ji ◽  
Yong-Goo Kim ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Hydrogen Plasma ◽  
Nanoscale Mosfets ◽  
Plasma Immersion Ion Implantation

Metallic contamination in hydrogen plasma immersion ion implantation of silicon

2001 ◽  
Vol 90 (8) ◽  
pp. 3743-3749 ◽  
Author(s):  
Paul K. Chu ◽  
Ricky K. Y. Fu ◽  
Xuchu Zeng ◽  
Dixon T. K. Kwok
Keyword(s):  
Ion Implantation ◽  
Hydrogen Plasma ◽  
Plasma Immersion Ion Implantation ◽  
Metallic Contamination

Improvement of surface bioactivity on titanium by water and hydrogen plasma immersion ion implantation

Biomaterials ◽  
2005 ◽  
Vol 26 (31) ◽  
pp. 6129-6135 ◽  
Author(s):  
Youtao Xie ◽  
Xuanyong Liu ◽  
Anping Huang ◽  
Chuanxian Ding ◽  
Paul K. Chu
Keyword(s):  
Ion Implantation ◽  
Hydrogen Plasma ◽  
Plasma Immersion Ion Implantation

scholarly journals Study of silicon surface layers modified by hydrogen plasma immersion ion implantation and oxidation

2020 ◽  
Vol 1492 ◽  
pp. 012056
Author(s):  
A Szekeres ◽  
S Alexandrova ◽  
P Terziyska ◽  
M Anastasescu ◽  
M Stoica ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Silicon Surface ◽  
Hydrogen Plasma ◽  
Surface Layers ◽  
Plasma Immersion Ion Implantation

Formation of Buried Porous Silicon Structure by Hydrogen Plasma Immersion Ion Implantation

1996 ◽  
Vol 452 ◽  
Author(s):  
Z. Fan ◽  
Paul K. Chu ◽  
X. Lu ◽  
S. S. K. Iyer ◽  
N. W. Cheung
Keyword(s):  
Optical Properties ◽  
Porous Silicon ◽  
Ion Implantation ◽  
Hydrogen Plasma ◽  
Optoelectronic Devices ◽  
Silicon Structure ◽  
Implantation Time ◽  
Alternative Means ◽  
Silicon Structures ◽  
Plasma Immersion Ion Implantation

AbstractPlasma Immersion Ion Implantation (PIII) excels in several areas over conventional ion implantation, for example, higher dose, shorter implantation time, and lower overall cost. The technique can be used to fabricate buried porous silicon. In our experiment, hydrogen is implanted into Si by PIII at 5–30kV to form underlying porous silicon (PS) which emits light at an energy higher than the Si bandgap. The optical properties of the PS samples as measured by photoluminescence are quite good. The PHI technique therefore offers an alternative means to fabricate buried porous silicon structures which can potentially be used to fabricate optoelectronic devices in silicon.

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