High-performance antimonide-based heterostructure backward diodes for millimeter-wave detection

2002 ◽  
Vol 23 (10) ◽  
pp. 585-587 ◽  
Author(s):  
P. Fay ◽  
J.N. Schulman ◽  
S. Thomas ◽  
D.H. Chow ◽  
Y.K. Boegeman ◽  
...  
Keyword(s):  
Millimeter Wave ◽  
High Performance ◽  
Wave Detection

Uncooled bolometer for millimeter-wave detection using manganese-cobalt-nickel-oxide thin film

2020 ◽  
Vol 13 (12) ◽  
pp. 124002
Author(s):  
Tao Hu ◽  
Wanli Ma ◽  
Jing Wu ◽  
Zhibo Zhang ◽  
Wei Zhou ◽  
...  
Keyword(s):  
Thin Film ◽  
Nickel Oxide ◽  
Millimeter Wave ◽  
Oxide Thin Film ◽  
Wave Detection ◽  
Cobalt Nickel ◽  
Cobalt Nickel Oxide ◽  
Nickel Oxide Thin Film

scholarly journals A RF Redundant TSV Interconnection for High Resistance Si Interposer

Micromachines ◽  
2021 ◽  
Vol 12 (2) ◽  
pp. 169
Author(s):  
Mengcheng Wang ◽  
Shenglin Ma ◽  
Yufeng Jin ◽  
Wei Wang ◽  
Jing Chen ◽  
...  
Keyword(s):  
Millimeter Wave ◽  
High Frequency ◽  
High Performance ◽  
Rapid Development ◽  
Coplanar Waveguide ◽  
Equivalent Circuit Model ◽  
High Resistivity ◽  
Performance Requirements ◽  
Wave Radar ◽  
Interconnect Design

Through Silicon Via (TSV) technology is capable meeting effective, compact, high density, high integration, and high-performance requirements. In high-frequency applications, with the rapid development of 5G and millimeter-wave radar, the TSV interposer will become a competitive choice for radio frequency system-in-package (RF SIP) substrates. This paper presents a redundant TSV interconnect design for high resistivity Si interposers for millimeter-wave applications. To verify its feasibility, a set of test structures capable of working at millimeter waves are designed, which are composed of three pieces of CPW (coplanar waveguide) lines connected by single TSV, dual redundant TSV, and quad redundant TSV interconnects. First, HFSS software is used for modeling and simulation, then, a modified equivalent circuit model is established to analysis the effect of the redundant TSVs on the high-frequency transmission performance to solidify the HFSS based simulation. At the same time, a failure simulation was carried out and results prove that redundant TSV can still work normally at 44 GHz frequency when failure occurs. Using the developed TSV process, the sample is then fabricated and tested. Using L-2L de-embedding method to extract S-parameters of the TSV interconnection. The insertion loss of dual and quad redundant TSVs are 0.19 dB and 0.46 dB at 40 GHz, respectively.

High-speed LiNbO3 modulator for W-band millimeter-wave detection

2007 ◽  
Author(s):  
C. J. Huang ◽  
C. A. Schuetz ◽  
R. Shireen ◽  
S. Shi ◽  
D. W. Prather
Keyword(s):  
Millimeter Wave ◽  
High Speed ◽  
Wave Detection ◽  
W Band

Millimeter- Wave Detection on Basis of Graphene Photo-Thermoelectric Effect

2018 ◽  
Author(s):  
Yukang Feng ◽  
Matthew DeJarld ◽  
Robert M. Weikle ◽  
Linli Xie ◽  
Paul. M. Campbell ◽  
...  
Keyword(s):  
Millimeter Wave ◽  
Thermoelectric Effect ◽  
Wave Detection
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