Investigation of pyroelectric polarization effect on GaN MOS capacitors and field-effect transistors

2012 ◽  
Author(s):  
J. Zhang ◽  
C. Hitchcock ◽  
Z. Li ◽  
T. P. Chow
Keyword(s):  
Field Effect ◽  
Polarization Effect ◽  
Field Effect Transistors ◽  
Mos Capacitors

Combined Effects of an Epitaxial Ge Channel and Si Substrate on Ge-on-Si MOS Capacitors and Field Effect Transistors

2007 ◽  
Author(s):  
Jungwoo Oh ◽  
Prashant Majhi ◽  
Hideok Lee ◽  
Se-Hoon Lee ◽  
Sanjay Banerjee ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Combined Effects ◽  
Si Substrate ◽  
Mos Capacitors

Investigation of Oxide Films Prepared by Direct Oxidation of C-Face 4H-SiC in Nitric Oxide

2010 ◽  
Vol 645-648 ◽  
pp. 515-518 ◽  
Author(s):  
Dai Okamoto ◽  
Hiroshi Yano ◽  
Yuki Oshiro ◽  
Tomoaki Hatayama ◽  
Yukiharu Uraoka ◽  
...  
Keyword(s):  
Field Effect ◽  
High Performance ◽  
Room Temperature ◽  
Field Effect Transistors ◽  
Gate Oxide ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Interface Traps ◽  
Direct Oxidation ◽  
Mos Capacitors

Characteristics of metal–oxide–semiconductor (MOS) capacitors and MOS field-effect transistors (MOSFETs) fabricated by direct oxidation of C-face 4H-SiC in NO were investigated. It was found that nitridation of the C-face 4H-SiC MOS interface generates near-interface traps (NITs) in the oxide. These traps capture channel mobile electrons and degrade the performance of MOSFETs. The NITs can be reduced by unloading the samples at room temperature after oxidation. It is important to reduce not only the interface states but also the NITs to fabricate high-performance C-face 4H-SiC MOSFETs with nitrided gate oxide.

Improved MOS Interface Properties of C-Face 4H-SiC by POCl3 Annealing

2011 ◽  
Vol 679-680 ◽  
pp. 425-428 ◽  
Author(s):  
Shinya Kotake ◽  
Hiroshi Yano ◽  
Dai Okamoto ◽  
Tomoaki Hatayama ◽  
Takashi Fuyuki
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Interface State ◽  
State Density ◽  
Oxide Semiconductor ◽  
Conduction Band Edge ◽  
Mos Capacitors ◽  
Phosphorus Containing ◽  
New Process ◽  
Mos Structures

Metal-oxide-semiconductor (MOS) capacitors and MOS field-effect transistors (MOSFETs) were fabricated on C-face 4H-SiC with post-oxidation annealing in phosphorus- containing atmosphere. POCl3/N2 annealing at 1000 °C, which is an effective condition for Si-face, did not bring any improvement in the interface state density (Dit) for C-face due to additional oxide growth. We have developed a new process sequence suitable for C-face MOS structures. As a result, the Dit near the conduction band edge was drastically decreased by the developed process to less than 3x1011 cm−2eV−1. The field-effect mobility of C-face 4H-SiC MOSFETs was effectively increased to 37 cm2/Vs. We found that the incorporation of phosphorus atoms into the SiO2/SiC interface can improve MOSFET performance not only for the Si-face but also for the C-face.

Sign in / Sign up

Export Citation Format

Share Document