Adaptive Multi-Band Multi-Mode Power Amplifier Using Integrated Varactor-Based Tunable Matching Networks

2006 ◽  
Vol 41 (9) ◽  
pp. 2166-2176 ◽  
Author(s):  
W.C.E. Neo ◽  
Y. Lin ◽  
X.-D. Liu ◽  
L.C.N. De Vreede ◽  
L.E. Larson ◽  
...  
Keyword(s):  
Power Amplifier ◽  
Matching Networks ◽  
Multi Mode ◽  
Multi Band

scholarly journals A compact multi-mode multi-band power amplifier with harmonic-suppression matching networks for GSM/TD-SCDMA/LTE terminals

2016 ◽  
Vol 13 (24) ◽  
pp. 20161033-20161033
Author(s):  
Jun-ming Lin ◽  
Gary Zhang ◽  
Zhi-hao Zhang ◽  
Yao-hua Zheng ◽  
Jia-jin Li ◽  
...  
Keyword(s):  
Power Amplifier ◽  
Harmonic Suppression ◽  
Matching Networks ◽  
Band Power ◽  
Multi Mode ◽  
Multi Band

Fully Monolithic BiCMOS Reconfigurable Power Amplifier for Multi-Mode and Multi-Band Applications

2015 ◽  
Vol 63 (2) ◽  
pp. 614-624 ◽  
Author(s):  
Ming-Lung Lee ◽  
Chong-Yi Liou ◽  
Wei-Ting Tsai ◽  
Chun-Yu Lou ◽  
Hao-Lun Hsu ◽  
...  
Keyword(s):  
Power Amplifier ◽  
Multi Mode ◽  
Multi Band

scholarly journals Compact 1.5GHz to 2.5GHz multi-band multi-mode power amplifier

2011 ◽  
Vol 8 (11) ◽  
pp. 854-858 ◽  
Author(s):  
Takayuki Furuta ◽  
Atsushi Fukuda ◽  
Kunihiro Kawai ◽  
Hiroshi Okazaki ◽  
Shoichi Narahashi
Keyword(s):  
Power Amplifier ◽  
Multi Mode ◽  
Multi Band

RF-MEMS multi-mode-matching networks for GaN power transistors

2014 ◽  
Vol 6 (5) ◽  
pp. 447-458 ◽  
Author(s):  
Sascha A. Figur ◽  
Friedbert van Raay ◽  
Rüdiger Quay ◽  
Larissa Vietzorreck ◽  
Volker Ziegler
Keyword(s):  
Output Power ◽  
Power Amplifier ◽  
Rf Mems ◽  
Operation Mode ◽  
Maximum Output Power ◽  
Maximum Output ◽  
Mode Matching ◽  
Power Added Efficiency ◽  
Matching Networks ◽  
Multi Mode

This work presents radio-frequency-microelectromechanical-system (RF-MEMS)-based tunable input- and output-matching networks for a multi-band gallium nitride (GaN) power-amplifier applications. In the first part, circuit designs are shown and characterized for a fixed operation mode of the transistor, i.e. either a maximum-output-power- or a maximum-power-added-efficiency (PAE)-mode, which are finally combined into a multi-mode-matching network (M3N); the M3N allows to tune the operation mode of the transistor independently of its operational frequency. The matching networks are designed to provide optimum matching for the power amplifier at three to six different operating frequencies for maximum-output-power- and maximum-PAE-mode. In the frequency range from 3.5 to 8.5 GHz, return losses of 10 dB and higher were measured and insertion losses of 0.5–1.9 dB were demonstrated for the output-matching networks. Further characterizations were performed to test the dependency on the RF-input power, and no changes were observed up to power levels of 34 dBm when cold-switched.

RF-MEMS variable matching networks and switches for multi-band and multi-mode GaN power amplifiers

2014 ◽  
Vol 6 (3-4) ◽  
pp. 265-276
Author(s):  
Sascha A. Figur ◽  
Friedbert van Raay ◽  
Rüdiger Quay ◽  
Peter Lohmiller ◽  
Larissa Vietzorreck ◽  
...  
Keyword(s):  
Rf Mems ◽  
Frequency Range ◽  
Microelectromechanical System ◽  
Power Added Efficiency ◽  
Matching Networks ◽  
Frequency Agile ◽  
Mode Of Operation ◽  
Insertion Losses ◽  
Multi Mode ◽  
Multi Band

This work presents radio-frequency-microelectromechanical-system (RF-MEMS)-based tunable matching networks for a multi-band gallium nitride (GaN) power amplifer (PA) application. In the frequency range from 3.5–8.5 GHz return losses of 5–10 dB were measured for the input network, matching impedances close to the border of the Smith chart. For the output matching network return losses of 10–20 dB and insertion losses of 1.3–2 dB were measured. The matching networks can tune the PA to four different operating frequencies, as well as changing the transistor's mode of operation from maximum delivered-output-power to maximum power-added-efficiency (PAE), while keeping the operating frequency constant. Furthermore, different single pole double throw (SPDT)-switches are designed and characterized, to be used in frequency-agile transmit/receive-modules (T/R modules).

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