Long-Term Stability of Metal Lines, Polysilicon Gauges, and Ohmic Contacts for Harsh-Environment Pressure Sensors

2006 ◽  
Vol 6 (6) ◽  
pp. 1596-1601 ◽  
Author(s):  
Alexandru Andrei ◽  
Christophe Malhaire ◽  
Sebastiano Brida ◽  
Daniel Barbier
Author(s):  
Yinan Zhao ◽  
Lin Liu ◽  
zhen Li ◽  
Feifei Wang ◽  
Xinxin Chen ◽  
...  

Design and development of flexible pressure sensors with high sensitivity, long-term stability and simple fabrication processes is a key procedure to fulfill the applications in wearable electronics, e-skin and medical...


2013 ◽  
Vol 199 ◽  
pp. 334-343 ◽  
Author(s):  
Marina Santo Zarnik ◽  
Vlasta Sedlakova ◽  
Darko Belavic ◽  
Josef Sikula ◽  
Jiri Majzner ◽  
...  

2003 ◽  
Vol 1 (2) ◽  
pp. 219-222 ◽  
Author(s):  
E. Kaminska ◽  
K. Golaszewska ◽  
A. Piotrowska ◽  
A. Kuchuk ◽  
R. Kruszka ◽  
...  

2000 ◽  
Vol 640 ◽  
Author(s):  
S.-K. Lee ◽  
C.-M. Zetterling ◽  
M. Östling

ABSTRACTIn the present work, we investigated sputtered titanium tungsten (TiW) contacts for Ohmic contacts to both n- and p-type 4H-SiC with long-term stability under high temperature (500°C).. Epitaxial layers with a doping concentration of 1.3×1019 and 6×1018 cm−3 were used. After high temperature annealing (>950°C) sputtered TiW contacts showed Ohmic behavior with good uniform distribution of the specific contact resistance. We obtained an average specific contact resistance (pc) of 4×10−5 Ωcm2 and 1.2 ∼ 1.7×10−4 Ωcm2 for p- and n-type, respectively from linear TLM measurement. We also found some variation of the specific contact resistance and the sheet resistance from our TLM measurement for p-type contacts. We will discuss this behavior with the measurement of SIMS. Long-term stability with a top-cap layer is also discussed


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