Tunneling injection quantum-dot lasers with polarization-dependent photon-mediated carrier redistribution and gain narrowing

2005 ◽  
Vol 41 (11) ◽  
pp. 1369-1379 ◽  
Author(s):  
Jungho Kim ◽  
P.K. Kondratko ◽  
Shun Lien Chuang ◽  
G. Walter ◽  
N. Holonyak ◽  
...  
Keyword(s):  
Quantum Dot ◽  
Quantum Dot Lasers ◽  
Gain Narrowing ◽  
Carrier Redistribution ◽  
Tunneling Injection

Tunneling Injection Quantum-Dot Lasers

2005 ◽  
Vol 891 ◽  
Author(s):  
Shun Lien Chuang ◽  
Jungho Kim ◽  
Peter K. Kondratko ◽  
Gabriel Walter ◽  
Nick Holonyak ◽  
...  
Keyword(s):  
Quantum Dot ◽  
Injection Current ◽  
Stimulated Emission ◽  
Rate Equations ◽  
Quasi Equilibrium ◽  
Modal Gain ◽  
Gain Narrowing ◽  
Tunneling Injection ◽  
Gain Spectra ◽  
Evolution Behavior

ABSTRACTWe investigate a tunneling injection InP quantum-dot (QD) laser theoretically and experimentally. The device consists of a single compressively strained InP QD layer coupled closely to two tensile strained InGaP quantum wells (QWs). While most tensile strained QW lasers in this wavelength (red) range lase in the transverse-magnetic (TM) polarization, our QD laser lases in the transverse-electric (TE) polarization from the first excited state of the compressively strained QDs, which is coupled to the ground state of the tensile-strained InGaP QWs. When we measure TE and TM modal gain spectra, a typical QW gain evolution behavior is observed at low injection currents, which can be theoretically explained by the quasi-equilibrium of carrier distribution. When the injection current is increased near threshold, a TE gain narrowing and a simultaneous TM gain pinning are observed in the measured modal gain spectra, which cannot be explained via the quasi-equilibrium model. We propose a polarization-dependent photon-mediated carrier re-distribution in the QD-coupled-QW structure to explain this TE and TM gain evolution behavior. When the injection current is just below threshold, the strong carrier depletion via stimulated emission due to coupling between the InP QD and InGaP QW states plays an important role in carrier re-distribution, which depends on the optical transition energy and polarization. This polarization-dependent photon-mediated carrier re-distribution explains the TE gain narrowing and TM gain pinning behavior. To quantitatively demonstrate the photon-mediated carrier re-distribution near the threshold current, a set of coupled rate equations are solved taking into account the polarization-dependent stimulated emission processes. The calculated polarization power ratio based on the coupled rate equations explains the experimental observations.

Design of tunneling injection quantum dot lasers

2007 ◽  
Vol 3 (1) ◽  
pp. 4-6
Author(s):  
Guo-zhi Jia ◽  
Jiang-hong Yao ◽  
Yong-chun Shu ◽  
Zhan-guo Wang
Keyword(s):  
Quantum Dot ◽  
Quantum Dot Lasers ◽  
Tunneling Injection

On the principle operation of tunneling injection quantum dot lasers

2021 ◽  
pp. 100362
Author(s):  
Igor Khanonkin ◽  
Sven Bauer ◽  
Vissarion Mikhelashvili ◽  
Ori Eyal ◽  
Michael Lorke ◽  
...  
Keyword(s):  
Quantum Dot ◽  
Quantum Dot Lasers ◽  
Tunneling Injection
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