Recent Advances in LWIR Type-II InAs/GaSb Superlattice Photodetectors and Focal Plane Arrays at the Center for Quantum Devices

2009 ◽  
Vol 97 (6) ◽  
pp. 1056-1066 ◽  
Author(s):  
M. Razeghi ◽  
D. Hoffman ◽  
B.-M. Nguyen ◽  
P.-Y. Delaunay ◽  
E.K.-w. Huang ◽  
...  
Keyword(s):  
Focal Plane ◽  
Focal Plane Arrays ◽  
Type Ii ◽  
Quantum Devices ◽  
Recent Advances

Recent advances in LWIR Type-II InAs/GaSb superlattice photodetectors and focal plane arrays at the Center for Quantum Devices

2008 ◽  
Author(s):  
Manijeh Razeghi ◽  
Darin Hoffman ◽  
Binh-Minh Nguyen ◽  
Pierre-Yves Delaunay ◽  
Edward K. Huang ◽  
...  
Keyword(s):  
Focal Plane ◽  
Focal Plane Arrays ◽  
Type Ii ◽  
Quantum Devices ◽  
Recent Advances

scholarly journals Fabrication of 15-$\mu$ m Pitch $640\times512$ InAs/GaSb Type-II Superlattice Focal Plane Arrays

2019 ◽  
Vol 55 (4) ◽  
pp. 1-5 ◽  
Author(s):  
Fikri Oguz ◽  
Yetkin Arslan ◽  
Erkin Ulker ◽  
Alpan Bek ◽  
Ekmel Ozbay
Keyword(s):  
Focal Plane ◽  
Focal Plane Arrays ◽  
Type Ii ◽  
Type Ii Superlattice

InAs/GaAsSb Type-II superlattice LWIR focal plane arrays detectors grown on InAs substrates

2020 ◽  
pp. 1-1
Author(s):  
Min Huang ◽  
Li He ◽  
Jianxin Chen ◽  
Zhicheng Xu ◽  
Jiajia Xu ◽  
...  
Keyword(s):  
Focal Plane ◽  
Focal Plane Arrays ◽  
Type Ii ◽  
Type Ii Superlattice

Demonstration of Fabricated Midwave Infrared InAs/GaSb Type-II Superlattice-based Focal Plane Arrays

2017 ◽  
Vol 67 (2) ◽  
pp. 149 ◽  
Author(s):  
K.C. Goma Kumari ◽  
H.M. Rawool ◽  
S. Chakrabarti
Keyword(s):  
Low Temperature ◽  
Focal Plane ◽  
Spectral Response ◽  
Low Noise ◽  
Focal Plane Arrays ◽  
Type Ii ◽  
Type Ii Superlattice ◽  
Pixel Detectors ◽  
Midwave Infrared ◽  
Single Pixel

In this study, fabricated 320 × 256 infrared focal plane arrays (FPAs) were realised using a GaSb/InAs-based type-II superlattice heterostructure for midwave infrared (MWIR) imaging. We report here the optimized fabrication and characterization of single-pixel infrared detectors and FPAs. MWIR spectral response up to 5 μm of these single-pixel detectors was evident up to 250 K. Responsivity was measured to be 1.62 A/W at 0.8 V and 80 K. Current–voltage characteristics at room temperature (300 K) and at low temperature (18 K) revealed the resistance and dark current variation of the device in the operating bias region. Moreover, good thermal images were obtained at device temperatures up to 150 K for low-temperature targets. Low noise equivalent difference in temperature was measured to be 58 mK at 50 K and 117 mK at 120 K.

InAs/GaSb type-II short-period superlattices for advanced single and dual-color focal plane arrays

2007 ◽  
Author(s):  
Martin Walther ◽  
Robert Rehm ◽  
Joachim Fleissner ◽  
Johannes Schmitz ◽  
Johann Ziegler ◽  
...  
Keyword(s):  
Focal Plane ◽  
Focal Plane Arrays ◽  
Type Ii ◽  
Dual Color ◽  
Short Period ◽  
Short Period Superlattices
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