An RF-MEMS Switch With Low-Actuation Voltage and High Reliability

2006 ◽  
Vol 15 (6) ◽  
pp. 1605-1611 ◽  
Author(s):  
Seong-Dae Lee ◽  
Byoung-Chul Jun ◽  
Sam-Dong Kim ◽  
Hyun-Chang Park ◽  
Jin-Koo Rhee ◽  
...  
Keyword(s):  
Rf Mems ◽  
High Reliability ◽  
Actuation Voltage ◽  
Rf Mems Switch ◽  
Mems Switch

Analysis of Au metal–metal contacts in a lateral actuated RF MEMS switch

2014 ◽  
Vol 6 (5) ◽  
pp. 481-486 ◽  
Author(s):  
Markus Gaitzsch ◽  
Steffen Kurth ◽  
Sven Voigt ◽  
Sven Haas ◽  
Thomas Gessner
Keyword(s):  
Rf Mems ◽  
High Reliability ◽  
Actuation Voltage ◽  
High Time Resolution ◽  
Rf Mems Switch ◽  
Mems Switch ◽  
Current Path ◽  
Metal Metal ◽  
Rf Performance ◽  
5 Ghz

This paper reports on the ohmic contacts of an radio-frequency micro-electro-mechanical-system (RF MEMS) switch. The structure of the MEMS is described briefly to give information about the organization of the switch device. The most significant performance data are reported, indicating very low actuation voltage below 5 V, switching time of <10 µs and good RF performance for frequencies up to 5 GHz. Since the contact performance is a key for excellent RF performance in the actuated state and for high reliability as well the article is focused on the contacts. It is supposed that asperities are building the current path in a closed contact, which is proved by measurements of the closing process with high time resolution. The measurements exhibit very good power-handling capabilities of the contacts. The reported findings render prior theoretical experiments with a physical device.

Low Actuation Voltage Capacitive Shunt RF-MEMS Switch Having a Corrugated Bridge

2006 ◽  
Vol E89-C (12) ◽  
pp. 1880-1887 ◽  
Author(s):  
Y.-T. SONG ◽  
H.-Y. LEE ◽  
M. ESASHI
Keyword(s):  
Rf Mems ◽  
Actuation Voltage ◽  
Rf Mems Switch ◽  
Mems Switch

A stiff and flat membrane operated DC contact type RF MEMS switch with low actuation voltage

2009 ◽  
Vol 153 (1) ◽  
pp. 114-119 ◽  
Author(s):  
Jongseok Kim ◽  
Sangwook Kwon ◽  
Heemoon Jeong ◽  
Youngtack Hong ◽  
Sanghun Lee ◽  
...  
Keyword(s):  
Rf Mems ◽  
Actuation Voltage ◽  
Rf Mems Switch ◽  
Contact Type ◽  
Mems Switch ◽  
Flat Membrane

scholarly journals Optimization of shunt capacitive RF MEMS switch by using NSGA-II algorithm and uti-liti algorithm

2019 ◽  
pp. 43-50
Keyword(s):  
Return Loss ◽  
Rf Mems ◽  
Actuation Voltage ◽  
Design System ◽  
Nsga Ii ◽  
Rf Mems Switch ◽  
Mems Switch ◽  
Axial Residual Stress ◽  
Switch Design ◽  
Design Requirements

The present paper aimed at designing, optimizing, and simulating the RF MEMS Switch which is stimulated electrostatically. The design of the switch is located on the CoplanarWaveguide (CPW) transmission line. The pull-in voltage of the switch was 2V and the axial residual stress of the proposed design was obtained at 23MPa. In order to design and optimize the geometric structure of the switch, the desired model was extracted based on the objective functions of the actuation voltage and the return loss up-state and also the isolation down-state using the mathematical programming. Moreover, the model was solved by the NSGA-II meta-heuristic algorithm in MATLAB software. In addition, the design requirements and the appropriate levels for designing the switch were obtained by presenting the Pareto front from the beam actuation voltage and also the return loss up-state and isolation down-state. Finally, the RF parameters of the switch were calculated as S11=-2.54dB and S21=-33.18dB at the working frequency of 40GHz by extracting the appropriate parameters of the switch design through simulating a switch designed by the COMSOL Multiphysics software 4.4a and the advanced design system (ADS).

scholarly journals Design and Fabrication of a Ka Band RF MEMS Switch with High Capacitance Ratio and Low Actuation Voltage

Micromachines ◽  
2021 ◽  
Vol 13 (1) ◽  
pp. 37
Author(s):  
Kun Deng ◽  
Fuxing Yang ◽  
Yucheng Wang ◽  
Chengqi Lai ◽  
Ke Han
Keyword(s):  
Rf Mems ◽  
Dielectric Material ◽  
Actuation Voltage ◽  
Rf Mems Switch ◽  
Ka Band ◽  
High Capacitance ◽  
Mems Switch ◽  
Capacitance Ratio ◽  
Metal Insulator Metal ◽  
State Capacitance

In this paper a high capacitance ratio and low actuation voltage RF MEMS switch is designed and fabricated for Ka band RF front-ends application. The metal-insulator-metal (MIM) capacitors is employed on a signal line to improve the capacitance ratio, which will not degrade the switch reliability. To reduce the actuation voltage, a low spring constant bending folding beam and bilateral drop-down electrodes are designed in the MEMS switch. The paper analyzes the switch pull-in model and deduces the elastic coefficient calculation equation, which is consistent with the simulation results. The measured results indicated that, for the proposed MEMS switch with a gap of 2 μm, the insertion loss is better than −0.5 dB and the isolation is more than −20 dB from 25 to 35 GHz with an actuation voltage of 15.8 V. From the fitted results, the up-state capacitance is 6.5 fF, down-state capacitance is 4.3 pF, and capacitance ratios is 162. Compared with traditional MEMS capacitive switches with dielectric material Si3N4, the proposed MEMS switch exhibits high on/off capacitance ratios of 162 and low actuation voltage.

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