Fabrication and Characterization of Microbent Inline Microfiber Interferometer for Compact Temperature and Current Sensing Applications

2017 ◽  
Vol 35 (11) ◽  
pp. 2150-2155 ◽  
Author(s):  
Ali A. Jasim ◽  
Jahid Faruki ◽  
Mohammad Faizal Ismail ◽  
Harith Ahmad
Keyword(s):  
Current Sensing ◽  
Sensing Applications ◽  
Fabrication And Characterization

Fabrication and characterization of spun HiBi PCF fibers for current sensing applications

2014 ◽  
Author(s):  
I. M. Nascimento ◽  
G. Chesini ◽  
A. C. S. Brígida ◽  
J. G. Hayashi ◽  
J. M. Baptista ◽  
...  
Keyword(s):  
Current Sensing ◽  
Sensing Applications ◽  
Fabrication And Characterization

Fabrication and characterization of micro/nanoporous Cr film for sensing applications

2014 ◽  
Vol 198 ◽  
pp. 115-121 ◽  
Author(s):  
Mohamed Shaban ◽  
Ashour M. Ahmed ◽  
Ehab Abdel-Rahman ◽  
Hany Hamdy
Keyword(s):  
Sensing Applications ◽  
Fabrication And Characterization ◽  
Cr Film

4H-Silicon Carbide p-n Diode for High Temperature (600 °C) Environment Applications

2015 ◽  
Vol 821-823 ◽  
pp. 636-639 ◽  
Author(s):  
Shi Qian Shao ◽  
Wei Cheng Lien ◽  
Ayden Maralani ◽  
Jim C. Cheng ◽  
Kristen L. Dorsey ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
High Temperature ◽  
Harsh Environment ◽  
Stable Operation ◽  
Temperature Changes ◽  
Turn On ◽  
Sensing Applications ◽  
Depth Study ◽  
Fabrication And Characterization

In this work, we demonstrate the stable operation of 4H-silicon carbide (SiC) p-n diodes at temperature up to 600 °C. In-depth study methods of simulation, fabrication and characterization of the 4H-SiC p-n diode are developed. The simulation results indicate that the turn-on voltage of the 4H-SiC p-n diode changes from 2.7 V to 1.45 V as the temperature increases from 17 °C to 600 °C. The turn-on voltages of the fabricated 4H-SiC p-n diode decreases from 2.6 V to 1.3 V when temperature changes from 17 °C to 600 °C. The experimental I-V curves of the 4H-SiC p-n diode from 17 °C to 600 °C agree with the simulation ones. The demonstration of the stable operation of the 4H-SiC p-n diodes at high temperature up to 600 °C brings great potentials for 4H-SiC devices and circuits working in harsh environment electronic and sensing applications.

scholarly journals Design, Fabrication and Characterization of anIn SilicoCell Physiology lab for Bio Sensing Applications

2006 ◽  
Vol 34 ◽  
pp. 740-746 ◽  
Author(s):  
A ul Haque ◽  
M Rokkam ◽  
A R De Carlo ◽  
S T Wereley ◽  
H W Wells ◽  
...  
Keyword(s):  
Sensing Applications ◽  
Fabrication And Characterization

Fabrication and characterization of nanoporous ZnO layers for sensing applications

2012 ◽  
Vol 520 (14) ◽  
pp. 4662-4665 ◽  
Author(s):  
Alexander Wagner ◽  
Andrey Bakin ◽  
Torsten Otto ◽  
Mandy Zimmermann ◽  
Burkhardt Jahn ◽  
...  
Keyword(s):  
Sensing Applications ◽  
Fabrication And Characterization

Fabrication and characterization of calix[4]arene Langmuir–Blodgett thin film for gas sensing applications

2017 ◽  
Vol 89 (1-2) ◽  
pp. 77-84 ◽  
Author(s):  
Yaser Acikbas ◽  
Selahattin Bozkurt ◽  
Erkan Halay ◽  
Rifat Capan ◽  
Mehmet Levent Guloglu ◽  
...  
Keyword(s):  
Thin Film ◽  
Gas Sensing ◽  
Langmuir Blodgett ◽  
Sensing Applications ◽  
Fabrication And Characterization

Fabrication and characterization of porous CNF/PDMS nanocomposites for sensing applications

2019 ◽  
Vol 9 (6) ◽  
pp. 1309-1317 ◽  
Author(s):  
Wenyuan Luo ◽  
Mohammad Charara ◽  
Mrinal C. Saha ◽  
Yingtao Liu
Keyword(s):  
Sensing Applications ◽  
Fabrication And Characterization
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