Surface-Tension Driven Heterogeneous Integration of Thin Film Photonic Devices Using Micro-Contact Printing for Multi-Material Photonic Integrated Circuits

2011 ◽  
Vol 29 (10) ◽  
pp. 1578-1582 ◽  
Author(s):  
Jing Xiao ◽  
Fuchuan Song ◽  
Sang-Woo Seo
Keyword(s):  
Thin Film ◽  
Surface Tension ◽  
Integrated Circuits ◽  
Photonic Integrated Circuits ◽  
Photonic Devices ◽  
Heterogeneous Integration ◽  
Contact Printing

scholarly journals Thin film wavelength converters for photonic integrated circuits

Optica ◽  
2016 ◽  
Vol 3 (5) ◽  
pp. 531 ◽  
Author(s):  
Lin Chang ◽  
Yifei Li ◽  
Nicolas Volet ◽  
Leiran Wang ◽  
Jon Peters ◽  
...  
Keyword(s):  
Thin Film ◽  
Integrated Circuits ◽  
Photonic Integrated Circuits ◽  
Wavelength Converters

UV-Visible-IR Electroluminescence from Si and Ge Nanocrystals in a Wider Bandgap Matrix

1994 ◽  
Vol 358 ◽  
Author(s):  
G.S. Tompa ◽  
D.C. Morton ◽  
B.S. Sywe ◽  
Y. Lu ◽  
E.W. Forsythe ◽  
...  
Keyword(s):  
Integrated Circuits ◽  
Light Emission ◽  
Photonic Integrated Circuits ◽  
Photonic Devices ◽  
Host Matrix ◽  
Physical Mechanisms ◽  
Dispersion Effects ◽  
Communication Devices ◽  
Uv Visible ◽  
Ge Nanocrystals

ABSTRACTThe demonstration of photoluminescence (PL) and electroluminescence (EL) in nanostructures of Si or Ge, such as those found in porous silicon, has significantly improved the prospects of all Si based photonic devices. While the physical mechanisms at work are still a subject of much study, it is clear that the luminescence is associated with the formation of nanometer or “quantum” sized particles. Further, it is clear that prototype NanoCrystal Displays (NCDs) and communication devices are being fabricated in these material systems. We report here on the electroluminescent properties of nanometer sized particles in an SiO2 host matrix, which were fabricated by LPCVD techniques. The films have demonstrated reproducible emission from well below 400 nm to well above 800 nm. We believe that dispersion effects of the nanocrystals can account for "white" light emission. The films have been characterized using PL, Raman, XRD, TEM, and SIMS. The nanocrystals are primarily in the 2-7 nm range although larger crystal clusters are also observed. The development of stable and efficient Si or Ge nanocrystalline EL based devices could find applications in lamps/LEDs, photonic integrated circuits, and displays.

Heterogeneous integration of silicon photonic devices and integrated circuits

2015 ◽  
Author(s):  
Hyundai Park ◽  
Brian R. Koch ◽  
Erik J. Norberg ◽  
Jonathon E. Roth ◽  
Byungchae Kim ◽  
...  
Keyword(s):  
Integrated Circuits ◽  
Photonic Devices ◽  
Heterogeneous Integration ◽  
Silicon Photonic

scholarly journals Heterogeneous integration of lithium niobate and silicon nitride waveguides for wafer-scale photonic integrated circuits on silicon

2017 ◽  
Vol 42 (4) ◽  
pp. 803 ◽  
Author(s):  
Lin Chang ◽  
Martin H. P. Pfeiffer ◽  
Nicolas Volet ◽  
Michael Zervas ◽  
Jon D. Peters ◽  
...  
Keyword(s):  
Silicon Nitride ◽  
Lithium Niobate ◽  
Integrated Circuits ◽  
Photonic Integrated Circuits ◽  
Heterogeneous Integration ◽  
Wafer Scale

Photonic integrated circuits – a new approach to laser technology

2012 ◽  
Vol 60 (4) ◽  
pp. 683-689
Author(s):  
R. Piramidowicz ◽  
S. Stopiński ◽  
K. Ławniczuk ◽  
K. Welikow ◽  
P. Szczepański ◽  
...  
Keyword(s):  
Integrated Circuits ◽  
Basic Assumption ◽  
Photonic Integrated Circuits ◽  
Photonic Devices ◽  
New Approach ◽  
Integration Technology ◽  
History Of Development ◽  
History Of ◽  
Laser Sources ◽  
Multiwavelength Laser

Abstract In this work a brief review on photonic integrated circuits (PICs) is presented with a specific focus on integrated lasers and amplifiers. The work presents the history of development of the integration technology in photonics and its comparison to microelectronics. The major part of the review is focused on InP-based photonic integrated circuits, with a short description of the potential of the silicon technology. A completely new way of fabrication of PICs, called generic integration technology, is presented and discussed. The basic assumption of this approach is the very same as in the case of electronic circuits and states that a limited set of standard components, both active and passive, enables designing of a complex, multifunctional PIC of every type. As a result, functionally advanced, compact, energy efficient and cost-optimized photonic devices can be fabricated. The work presents also selected examples of active PICs like multiwavelength laser sources, discretely tunable lasers, WDM transmitters, ring lasers etc.

scholarly journals Low-voltage high-performance silicon photonic devices and photonic integrated circuits operating up to 30 Gb/s

2011 ◽  
Vol 19 (27) ◽  
pp. 26936 ◽  
Author(s):  
Gyungock Kim ◽  
Jeong Woo Park ◽  
In Gyoo Kim ◽  
Sanghoon Kim ◽  
Sanggi Kim ◽  
...  
Keyword(s):  
Integrated Circuits ◽  
High Performance ◽  
Low Voltage ◽  
Photonic Integrated Circuits ◽  
Photonic Devices ◽  
Silicon Photonic
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