scholarly journals Analysis of thermal limitations in high-speed microcavity saturable absorber all-optical switching gates

2006 ◽  
Vol 24 (9) ◽  
pp. 3400-3408 ◽  
Author(s):  
Massoubre ◽  
Oudar ◽  
O'Hare ◽  
Gay ◽  
Bramerie ◽  
...  
Keyword(s):  
Saturable Absorber ◽  
High Speed ◽  
Optical Switching ◽  
All Optical ◽  
All Optical Switching

High‐speed all‐optical switching experiment in Mach–Zehnder configuration using GaAs waveguide

1993 ◽  
Vol 62 (9) ◽  
pp. 925-927 ◽  
Author(s):  
S. Nakamura ◽  
K. Tajima ◽  
N. Hamao ◽  
Y. Sugimoto
Keyword(s):  
High Speed ◽  
Optical Switching ◽  
All Optical ◽  
All Optical Switching

Ultrafast control of vortex microlasers

Science ◽  
2020 ◽  
Vol 367 (6481) ◽  
pp. 1018-1021 ◽  
Author(s):  
Can Huang ◽  
Chen Zhang ◽  
Shumin Xiao ◽  
Yuhan Wang ◽  
Yubin Fan ◽  
...  
Keyword(s):  
Energy Consumption ◽  
High Speed ◽  
Optical Switching ◽  
Quantum Information Processing ◽  
All Optical ◽  
Low Energy Consumption ◽  
Linearly Polarized ◽  
Terahertz Frequencies ◽  
On Chip ◽  
All Optical Switching

The development of classical and quantum information–processing technology calls for on-chip integrated sources of structured light. Although integrated vortex microlasers have been previously demonstrated, they remain static and possess relatively high lasing thresholds, making them unsuitable for high-speed optical communication and computing. We introduce perovskite-based vortex microlasers and demonstrate their application to ultrafast all-optical switching at room temperature. By exploiting both mode symmetry and far-field properties, we reveal that the vortex beam lasing can be switched to linearly polarized beam lasing, or vice versa, with switching times of 1 to 1.5 picoseconds and energy consumption that is orders of magnitude lower than in previously demonstrated all-optical switching. Our results provide an approach that breaks the long-standing trade-off between low energy consumption and high-speed nanophotonics, introducing vortex microlasers that are switchable at terahertz frequencies.

High-speed all-optical switching in ion-implanted silicon-on-insulator microring resonators

2007 ◽  
Vol 32 (14) ◽  
pp. 2046 ◽  
Author(s):  
Michael Först ◽  
Jan Niehusmann ◽  
Tobias Plötzing ◽  
Jens Bolten ◽  
Thorsten Wahlbrink ◽  
...  
Keyword(s):  
High Speed ◽  
Optical Switching ◽  
Silicon On Insulator ◽  
Microring Resonators ◽  
All Optical ◽  
All Optical Switching ◽  
Ion Implanted

Broadband, High-Speed, and Extraordinarily Large All-Optical Switching with Yttrium-doped Cadmium Oxide

2020 ◽  
Author(s):  
Soham Saha ◽  
Benjamin T. Diroll ◽  
Joshua Shank ◽  
Zhaxylyk Kudyshev ◽  
Aveek Dutta ◽  
...  
Keyword(s):  
High Speed ◽  
Optical Switching ◽  
Cadmium Oxide ◽  
All Optical ◽  
All Optical Switching

Novel AlGaAs/CaF2 SESAM Device for Ultrashort Pulse Generation

2001 ◽  
Vol 692 ◽  
Author(s):  
Silke Schön ◽  
Lukas Gallmann ◽  
Markus Haiml ◽  
Ursula Keller
Keyword(s):  
Saturable Absorber ◽  
Ultrashort Pulse ◽  
Optical Switching ◽  
Modulation Depth ◽  
Pulse Generation ◽  
Absorber Material ◽  
Semiconductor Saturable Absorber ◽  
All Optical ◽  
Ultrashort Pulse Generation ◽  
All Optical Switching

AbstractA novel ultrabroadband AlGaAs/CaF2 semiconductor saturable absorber mirror (SESAM) covering nearly the entire Ti:sapphire gain spectrum is demonstrated. This device supports sub-10-fs pulse operation of a laser. In contrast to previous SESAMs of comparable bandwidth, our device can be monolithically grown by molecular beam epitaxy and requires no post-growth processing. GaAs is used as semiconductor saturable absorber material. The high defect concentration of the material is due to the lattice-mismatched growth on a fluoride surface with (111) orientation. With a time response of 1.2 ps for carrier trapping, a saturation fluence of 36 μJ/cm2 and a modulation depth of up to 2.2% , the GaAs saturable absorber is well-suited for all-optical switching in SESAM devices used for ultrashort pulse generation.

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