Cell-based wideband variable-gain amplifier with accurate gain adjustment in 65 nm CMOS technology

2016 ◽  
Author(s):  
X. Zhu ◽  
Y. Yang ◽  
H. Liu
Keyword(s):  
Cmos Technology ◽  
Variable Gain Amplifier ◽  
Variable Gain ◽  
Gain Adjustment

130 nm CMOS Bulk-Driven Variable Gain Amplifier for Low-Voltage Applications

2017 ◽  
Vol 26 (08) ◽  
pp. 1740003 ◽  
Author(s):  
Daniel Arbet ◽  
Viera Stopjaková ◽  
Martin Kováč ◽  
Lukáš Nagy ◽  
Matej Rakús ◽  
...  
Keyword(s):  
Low Voltage ◽  
Supply Voltage ◽  
Input Voltage ◽  
Cmos Technology ◽  
Variable Gain Amplifier ◽  
Voltage Range ◽  
Variable Gain ◽  
Wide Scale ◽  
Simulation Results ◽  
Low Supply Voltage

In this paper, a variable gain amplifier (VGA) designed in 130 nm CMOS technology is presented. The proposed amplifier is based on the bulk-driven (BD) design approach, which brings a possibility to operate with low supply voltage. Since the supply voltage of only 0.6 V is used for the amplifier to operate, there is no risk of latch-up event that usually represents the main drawback of the BD circuit systems. BD transistors are employed in the input differential stage, which makes it possible to operate in rail-to-rail input voltage range. Achieved simulation results indicate that gain of the proposed VGA can be varied in a wide scale, which together with the low supply voltage feature make the proposed amplifier useful for low-voltage and low-power applications. An additional circuit responsible for maintaining the linear-in-decibel gain dependency of the VGA is also addressed. The proposed circuit block avails arbitrary shaping of the curve characterizing the gain versus the controlling voltage dependency.

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