Tight binding simulation of quantum transport in interband tunneling devices

2002 ◽  
Author(s):  
M. Ogawa ◽  
R. Tominaga ◽  
T. Miyoshi
Keyword(s):  
Quantum Transport ◽  
Tight Binding ◽  
Interband Tunneling ◽  
Tunneling Devices

scholarly journals Tight Binding Simulation of Quantum Transport in Interband Tunneling Devices

VLSI Design ◽  
2001 ◽  
Vol 13 (1-4) ◽  
pp. 69-74
Author(s):  
Matsuto Ogawa ◽  
Ryuichiro Tominaga ◽  
Tanroku Miyoshi
Keyword(s):  
Quantum Transport ◽  
Small Difference ◽  
Tight Binding ◽  
Peak Current Density ◽  
Tunneling Diodes ◽  
Current Voltage ◽  
Interband Tunneling ◽  
Tunneling Devices ◽  
Wave Matching ◽  
Non Equilibrium Green’S Function

We have studied quantum transport in both Si and GaAs interband tunneling diodes (ITD's). In the simulation, a non-equilibrium Green's function method based an empirical tight binding theory has been used to take into account evanescent-wave matching at interfaces and realistic band structures. Comparison has been made between the results of our multiband (MB) model and those of conventional two-band (2B) model. As a result, it is found that the current–voltage (I–V) characteristics of the Si ITD have considerably smaller peak current density than the conventional 2B model, since our MB model reflects correctly the indirect gap band structure. On the other hand, in the GaAs ITD, there is small difference between the two models, because tunneling occurs between the conduction band and the valence band at F point. It is also found that the matching of evanescent electron modes is essentially necessary to include the valley-mixing effects at the tunneling interfaces.

scholarly journals Enabling Large-Scale Simulations of Quantum Transport with Manycore Computing

Electronics ◽  
2021 ◽  
Vol 10 (3) ◽  
pp. 253
Author(s):  
Yosang Jeong ◽  
Hoon Ryu
Keyword(s):  
Quantum Transport ◽  
Large Scale ◽  
Performance Enhancement ◽  
Silicon Nanowire ◽  
Matrix Multiplication ◽  
Tight Binding ◽  
Optimization Techniques ◽  
Wide Energy Range ◽  
Processing Unit ◽  
Binding Model

The non-equilibrium Green’s function (NEGF) is being utilized in the field of nanoscience to predict transport behaviors of electronic devices. This work explores how much performance improvement can be driven for quantum transport simulations with the aid of manycore computing, where the core numerical operation involves a recursive process of matrix multiplication. Major techniques adopted for performance enhancement are data restructuring, matrix tiling, thread scheduling, and offload computing, and we present technical details on how they are applied to optimize the performance of simulations in computing hardware, including Intel Xeon Phi Knights Landing (KNL) systems and NVIDIA general purpose graphic processing unit (GPU) devices. With a target structure of a silicon nanowire that consists of 100,000 atoms and is described with an atomistic tight-binding model, the effects of optimization techniques on the performance of simulations are rigorously tested in a KNL node equipped with two Quadro GV100 GPU devices, and we observe that computation is accelerated by a factor of up to ∼20 against the unoptimized case. The feasibility of handling large-scale workloads in a huge computing environment is also examined with nanowire simulations in a wide energy range, where good scalability is procured up to 2048 KNL nodes.

Demonstration of resonant transmission in InAs/GaSb/InAs interband tunneling devices

1990 ◽  
Vol 57 (25) ◽  
pp. 2675-2677 ◽  
Author(s):  
E. T. Yu ◽  
D. A. Collins ◽  
D. Z.‐Y. Ting ◽  
D. H. Chow ◽  
T. C. McGill
Keyword(s):  
Resonant Transmission ◽  
Interband Tunneling ◽  
Tunneling Devices

Quantum transport phenomena in InAs/GaSb/InAs tunneling devices under high magnetic fields

1992 ◽  
Vol 263 (1-3) ◽  
pp. 217-221 ◽  
Author(s):  
T. Takamasu ◽  
N. Miura ◽  
K. Taira ◽  
K. Funato ◽  
H. Kawai
Keyword(s):  
Magnetic Fields ◽  
Quantum Transport ◽  
Transport Phenomena ◽  
High Magnetic Fields ◽  
Tunneling Devices
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