Fabrication of GaN field emitter arrays by selective area growth technique

1997 ◽  
Keyword(s):  
Selective Area Growth ◽  
Growth Technique ◽  
Field Emitter ◽  
Field Emitter Arrays ◽  
Selective Area ◽  
Area Growth

scholarly journals Development of an Epitaxial Growth Technique Using III-V on a Si Platform for Heterogeneous Integration of Membrane Photonic Devices on Si

2021 ◽  
Vol 11 (4) ◽  
pp. 1801
Author(s):  
Takuro Fujii ◽  
Tatsurou Hiraki ◽  
Takuma Aihara ◽  
Hidetaka Nishi ◽  
Koji Takeda ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Epitaxial Growth ◽  
Heterogeneous Integration ◽  
Selective Area Growth ◽  
Si Substrate ◽  
Growth Technique ◽  
Si Photonics ◽  
Selective Area ◽  
Area Growth ◽  
Indium Gallium

The rapid increase in total transmission capacity within and between data centers requires the construction of low-cost, high-capacity optical transmitters. Since a tremendous number of transmitters are required, photonic integrated circuits (PICs) using Si photonics technology enabling the integration of various functional devices on a single chip is a promising solution. A limitation of a Si-based PIC is the lack of an efficient light source due to the indirect bandgap of Si; therefore, hybrid integration technology of III-V semiconductor lasers on Si is desirable. The major challenges are that heterogeneous integration of III-V materials on Si induces the formation of dislocation at high process temperature; thus, the epitaxial regrowth process is difficult to apply. This paper reviews the evaluations conducted on our epitaxial growth technique using a directly bonded III-V membrane layer on a Si substrate. This technique enables epitaxial growth without the fundamental difficulties associated with lattice mismatch or anti-phase boundaries. In addition, crystal degradation correlating with the difference in thermal expansion is eliminated by keeping the total III-V layer thickness thinner than ~350 nm. As a result, various III-V photonic-device-fabrication technologies, such as buried regrowth, butt-joint regrowth, and selective area growth, can be applicable on the Si-photonics platform. We demonstrated the growth of indium-gallium-aluminum arsenide (InGaAlAs) multi-quantum wells (MQWs) and fabrication of lasers that exhibit >25 Gbit/s direct modulation with low energy cost. In addition, selective-area growth that enables the full O-band bandgap control of the MQW layer over the 150-nm range was demonstrated. We also fabricated indium-gallium-arsenide phosphide (InGaAsP) based phase modulators integrated with a distributed feedback laser. Therefore, the directly bonded III-V-on-Si substrate platform paves the way to manufacturing hybrid PICs for future data-center networks.

Nonlinear Kinetic Analysis of InP and InAs Metal Organic Vapor Phase Epitaxy by Selective Area Growth Technique

2008 ◽  
Vol 47 (11) ◽  
pp. 8269-8274 ◽  
Author(s):  
Yunpeng Wang ◽  
Haizheng Song ◽  
Masakazu Sugiyama ◽  
Yoshiaki Nakano ◽  
Yukihiro Shimogaki
Keyword(s):  
Kinetic Analysis ◽  
Vapor Phase ◽  
Vapor Phase Epitaxy ◽  
Selective Area Growth ◽  
Growth Technique ◽  
Organic Vapor ◽  
Selective Area ◽  
Area Growth ◽  
Metal Organic ◽  
Nonlinear Kinetic

Nonlinear Kinetics of GaAs MOVPE Examined by Selective Area Growth Technique

2007 ◽  
Vol 154 (2) ◽  
pp. H91 ◽  
Author(s):  
Haizheng Song ◽  
Masakazu Sugiyama ◽  
Yoshiaki Nakano ◽  
Yukihiro Shimogaki
Keyword(s):  
Selective Area Growth ◽  
Nonlinear Kinetics ◽  
Growth Technique ◽  
Selective Area ◽  
Area Growth ◽  
Kinetics Of

High field-effect mobility normally-off AlGaN/GaN hybrid MOS-HFET on Si substrate by selective area growth technique

2011 ◽  
Vol 56 (1) ◽  
pp. 163-167 ◽  
Author(s):  
Hiroshi Kambayashi ◽  
Yoshihiro Satoh ◽  
Takuya Kokawa ◽  
Nariaki Ikeda ◽  
Takehiko Nomura ◽  
...  
Keyword(s):  
Field Effect ◽  
High Field ◽  
Selective Area Growth ◽  
Field Effect Mobility ◽  
Si Substrate ◽  
Growth Technique ◽  
Selective Area ◽  
Area Growth
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