Integration of High Voltage LDMOSFETs into a Low Voltage CMOS Technology for Display's Driving Circuit Applications

1997 ◽  
Keyword(s):  
High Voltage ◽  
Low Voltage ◽  
Cmos Technology ◽  
Driving Circuit

Complementary metal oxide semiconductor compatible high-voltage transistors

1987 ◽  
Vol 65 (8) ◽  
pp. 1003-1008
Author(s):  
P. Kempf ◽  
R. Hadaway ◽  
J. Kolk
Keyword(s):  
Metal Oxide ◽  
High Voltage ◽  
Process Model ◽  
Low Voltage ◽  
Complementary Metal Oxide Semiconductor ◽  
Cmos Technology ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Electrical Measurements ◽  
Cmos Transistors

The purpose of this work was to study the implementation of high-voltage transistors using standard 3–5 μm complementary metal oxide semiconductor (CMOS) technology with a minimum of additional photolithographic or implant steps. A fabrication process was designed to accommodate a variety of high-voltage transistors with greater than 450 V breakdown voltage and low-voltage CMOS. Extensive use was made of a two-dimensional device model and a one-dimensional process model to determine suitable process parameters. The necessary conditions to produce a high-voltage double-diffused metal oxide semiconductor (DMOS) structure, as well as both n-well and p-well regions for CMOS transistors, and a thick gate oxide required to sustain the full blocking voltage were the main determinants of the process flow. Lateral DMOS (LDMOS), vertical DMOS (VDMOS), conductivity modulated FET (COMFET), and MOS triac (TRIMOS) devices were fabricated on the same chip as standard CMOS transistors using the developed fabrication sequence. This paper includes the results of the process modelling, device design, and electrical measurements.

scholarly journals Destressing MOSFETs by Series Connection in Low Gain Buck Converters

2021 ◽  
Author(s):  
Walid Issa ◽  
Jose Ortiz-Gonzalez ◽  
Yihua Hu
Keyword(s):  
High Voltage ◽  
Thermal Stresses ◽  
Low Voltage ◽  
Buck Converter ◽  
Single Stage ◽  
Buck Converters ◽  
Series Connection ◽  
Turn On ◽  
Duty Cycles ◽  
Driving Circuit

<p>Low-gain buck converters will enable low voltage loads to access high voltage DC sources by a single stage converter at very low duty cycles. SiC MOSFETs are still limited to 1.7kV commercially and by seriesing them with adequate gate driving strategy, high voltages can be switched. This paper proposes a driving circuit for series SiC MOSFETs to block higher voltages. The driving circuit provides negative off-state voltage and turn on/off transitions in less than 100ns. The low-gain buck converter performance is assessed when using a single IGBT switch and series SiC MOSFETs. A simulation is implemented and shows the superiority of the proposed driven series SiC MOSFETs with distributed voltage and thermal stresses.</p>

Radiation and High-Voltage Tolerant Space CAN Driver in Standard Low-Voltage 3.3 V CMOS Technology

2017 ◽  
pp. 1-1
Author(s):  
R. J. E. Jansen ◽  
S. Lindner ◽  
G. Furano ◽  
C. Boatella-Polo ◽  
B. Glass
Keyword(s):  
High Voltage ◽  
Low Voltage ◽  
Cmos Technology

scholarly journals Destressing MOSFETs by Series Connection in Low Gain Buck Converters

2021 ◽  
Author(s):  
Walid Issa ◽  
Jose Ortiz-Gonzalez ◽  
Yihua Hu
Keyword(s):  
High Voltage ◽  
Thermal Stresses ◽  
Low Voltage ◽  
Buck Converter ◽  
Single Stage ◽  
Buck Converters ◽  
Series Connection ◽  
Turn On ◽  
Duty Cycles ◽  
Driving Circuit

<p>Low-gain buck converters will enable low voltage loads to access high voltage DC sources by a single stage converter at very low duty cycles. SiC MOSFETs are still limited to 1.7kV commercially and by seriesing them with adequate gate driving strategy, high voltages can be switched. This paper proposes a driving circuit for series SiC MOSFETs to block higher voltages. The driving circuit provides negative off-state voltage and turn on/off transitions in less than 100ns. The low-gain buck converter performance is assessed when using a single IGBT switch and series SiC MOSFETs. A simulation is implemented and shows the superiority of the proposed driven series SiC MOSFETs with distributed voltage and thermal stresses.</p>

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