2-D simulation of electron trajectories on dielectric under TE11 and TM11 RF electric field modes

Author(s):  
Zhu Fang ◽  
Zhang Zhao-chuan ◽  
Luo Ji-run
1974 ◽  
Vol 52 (17) ◽  
pp. 1716-1722
Author(s):  
C. Berger ◽  
A. Adnot ◽  
J.-D. Carette

A method to calculate the transmission properties of a slit–slit system in electronic optics is described. It includes the following steps: calculation of the electric field between the electrodes, calculation of the electron trajectories point by point as a function of the initial conditions, and finally counting of the electrons which reach the second slit. Calculated and measured values of the transmission efficiency for usual geometrical dimensions of this system are presented.


2017 ◽  
Vol 95 (5) ◽  
pp. 507-513 ◽  
Author(s):  
De-hua Wang

This paper addresses the photodetachment dynamics of a negative ion in a time-dependent electric field based on the semiclassical open-orbit theory. The photodetached electron probability density in a real time domain is studied in a gradient electric field for the first time. It is found that because of the influence of the gradient electric field, two or more electron trajectories can arrive at a given point on the detector, and the interference effect between these electron trajectories causes oscillatory structures in the electron probability density. Our calculation results suggest that when the external electric field changes very slowly with time, only two electron trajectories can arrive at a given point on the detector and the electron probability density exhibits a regular two-term oscillatory pattern. However, when the electric field changes quickly with time, four electron trajectories can reach the detector, which makes the oscillatory structures in the electron probability density become much more complicated. In addition, the electric field strength, photon energy, and the position of the detector can affect the electron probability density of this system sensitively. Our study provides a clear and intuitive picture for the photodetachment dynamics of the negative ion in the external electric field from a time-dependent viewpoint and may guide the future experimental researches on the photodetachment microscopy of negative ions in the time-dependent electric field.


2018 ◽  
Vol 96 (9) ◽  
pp. 961-968
Author(s):  
De-hua Wang

We examine the dynamics of electrons photodetached from the H– ion in time-dependent electric and magnetic fields for the first time. The photodetachment microscopy patterns caused by a time-dependent gradient electric field and magnetic field have been analyzed in great detail based on the semiclassical theory. The interplay of the gradient electric field and magnetic field forces causes an intricate shape of the electron wave and multiple electron trajectories generated by a fixed energy point source can arrive at a given point on the microchannel-plate detector. The interference effects between these electron trajectories cause the oscillatory structures of the electron probability density and electron current distribution, and a set of concentric interference fringes are found at the detector. Our calculation results suggest that the photodetachment microscopy interference pattern on the detector can be adjusted by the electron energy, magnetic field strength, and position of the detector plane. Under certain conditions, the interference pattern in the electron current distribution might be seen on the detector plane localized at a macroscopic distance from the photodetachment source, which can be observed in an actual photodetachment microscopy experiment. Therefore, we make predictions that our work should serve as a guide for future photodetachment microscopy experiments in time-dependent electric and magnetic fields.


2002 ◽  
Vol 80 (6) ◽  
pp. 661-674
Author(s):  
K Raouadi ◽  
R Renoud ◽  
B Askri ◽  
B Yangui ◽  
Z Fakhfakh

The presence of charges perturbs the X-microanalysis on insulator samples. Attempts to suppress these effects have been fruitless and a better understanding of the charge phenomenon is the only way to a clear interpretation of the results of a X-microanalysis. From a simulation of the charges implanted by an electron beam on an insulator target, we compute, as a fuction of the integrated dose, the characteristics of the emitted X-rays, such as the generating function ϕ (ρ z) or the intensity of the characteristic lines. We underline the role of the electric field on the primary beam and on the electron trajectories in the target. These results allow the analysis of experimentally measured X-rays. Our studies on the effects of the diameter of the probe and on the exposure time led us to establish the best conditions for the successful X-microanalysis of an insulator. [Journal translation]


Author(s):  
G. F. Rempfer

In photoelectron microscopy (PEM), also called photoemission electron microscopy (PEEM), the image is formed by electrons which have been liberated from the specimen by ultraviolet light. The electrons are accelerated by an electric field before being imaged by an electron lens system. The specimen is supported on a planar electrode (or the electrode itself may be the specimen), and the accelerating field is applied between the specimen, which serves as the cathode, and an anode. The accelerating field is essentially uniform except for microfields near the surface of the specimen and a diverging field near the anode aperture. The uniform field forms a virtual image of the specimen (virtual specimen) at unit lateral magnification, approximately twice as far from the anode as is the specimen. The diverging field at the anode aperture in turn forms a virtual image of the virtual specimen at magnification 2/3, at a distance from the anode of 4/3 the specimen distance. This demagnified virtual image is the object for the objective stage of the lens system.


Author(s):  
John W. Andrew ◽  
F.P. Ottensmeyer ◽  
E. Martell

Energy selecting electron microscopes of the Castaing-Henry prism-mirror-prism design suffer from a loss of image and energy resolution with increasing field of view. These effects can be qualitatively understood by examining the focusing properties of the prism shown in Fig. 1. A cone of electrons emerges from the entrance lens crossover A and impinges on the planar face of the prism. The task of the prism is to focus these electrons to a point B at a focal distance f2 from the side of the prism. Electrons traveling in the plane of the diagram (i.e., the symmetry plane of the prism) are focused toward point B due to the different path lengths of different electron trajectories in the triangularly shaped magnetic field. This is referred to as horizontal focusing; the better this focusing effect the better the energy resolution of the spectrometer. Electrons in a plane perpendicular to the diagram and containing the central ray of the incident cone are focused toward B by the curved fringe field of the prism.


Author(s):  
Patrick P. Camus

The theory of field ion emission is the study of electron tunneling probability enhanced by the application of a high electric field. At subnanometer distances and kilovolt potentials, the probability of tunneling of electrons increases markedly. Field ionization of gas atoms produce atomic resolution images of the surface of the specimen, while field evaporation of surface atoms sections the specimen. Details of emission theory may be found in monographs.Field ionization (FI) is the phenomena whereby an electric field assists in the ionization of gas atoms via tunneling. The tunneling probability is a maximum at a critical distance above the surface,xc, Fig. 1. Energy is required to ionize the gas atom at xc, I, but at a value reduced by the appliedelectric field, xcFe, while energy is recovered by placing the electron in the specimen, φ. The highest ionization probability occurs for those regions on the specimen that have the highest local electric field. Those atoms which protrude from the average surfacehave the smallest radius of curvature, the highest field and therefore produce the highest ionizationprobability and brightest spots on the imaging screen, Fig. 2. This technique is called field ion microscopy (FIM).


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