To Mute or to Whisper: A Study on Low-Duty Mode Operation for Interference Control in HetNets

Author(s):  
Chien-Chun Hsu ◽  
Hung-Yun Hsieh
2020 ◽  
Vol 63 (9) ◽  
pp. 3036-3050
Author(s):  
Elma Blom ◽  
Tessel Boerma

Purpose Many children with developmental language disorder (DLD) have weaknesses in executive functioning (EF), specifically in tasks testing interference control and working memory. It is unknown how EF develops in children with DLD, if EF abilities are related to DLD severity and persistence, and if EF weaknesses expand to selective attention. This study aimed to address these gaps. Method Data from 78 children with DLD and 39 typically developing (TD) children were collected at three times with 1-year intervals. At Time 1, the children were 5 or 6 years old. Flanker, Dot Matrix, and Sky Search tasks tested interference control, visuospatial working memory, and selective attention, respectively. DLD severity was based on children's language ability. DLD persistence was based on stability of the DLD diagnosis. Results Performance on all tasks improved in both groups. TD children outperformed children with DLD on interference control. No differences were found for visuospatial working memory and selective attention. An interference control gap between the DLD and TD groups emerged between Time 1 and Time 2. Severity and persistence of DLD were related to interference control and working memory; the impact on working memory was stronger. Selective attention was unrelated to DLD severity and persistence. Conclusions Age and DLD severity and persistence determine whether or not children with DLD show EF weaknesses. Interference control is most clearly impaired in children with DLD who are 6 years and older. Visuospatial working memory is impaired in children with severe and persistent DLD. Selective attention is spared.


Author(s):  
Anna Soveri ◽  
Eric P. A. Karlsson ◽  
Otto Waris ◽  
Petra Grönholm-Nyman ◽  
Matti Laine

Abstract. In a randomized controlled trial, we investigated the pattern of near transfer effects of working memory (WM) training with an adaptive auditory-visuospatial dual n-back training task in healthy young adults. The results revealed significant task-specific transfer to an untrained single n-back task, and more general near transfer to a WM updating composite score plus a nearly significant effect on a composite score measuring interference control in WM. No transfer effects were seen on Active or Passive WM composites. The results are discussed in the light of cognitive versus strategy-related overlap between training and transfer tasks.


2007 ◽  
Author(s):  
Gregory J. Davis ◽  
Adam T. Biggs ◽  
Bradley A. Dobrzenski ◽  
Bradley S. Gibson

2020 ◽  
Vol 53 (2) ◽  
pp. 9189-9194
Author(s):  
Jinna Li ◽  
Zhenfei Xiao ◽  
Tianyou Chai ◽  
Frank. L. Lewis ◽  
Sarangapani Jagannathan

2021 ◽  
pp. 1-1
Author(s):  
Qiang Xiao ◽  
Xiaoxin Ma ◽  
Weibiao Wang ◽  
Yanping Fan ◽  
Ping Cai ◽  
...  

Electronics ◽  
2021 ◽  
Vol 10 (4) ◽  
pp. 441
Author(s):  
Marcello Cioni ◽  
Alessandro Bertacchini ◽  
Alessandro Mucci ◽  
Nicolò Zagni ◽  
Giovanni Verzellesi ◽  
...  

In this paper, we investigate the evolution of threshold voltage (VTH) and on-resistance (RON) drifts in the silicon carbide (SiC) power metal-oxide-semiconductor field-effect transistors (MOSFETs) during the switch-mode operation. A novel measurement setup for performing the required on-the-fly characterization is presented and the experimental results, obtained on commercially available TO-247 packaged SiC devices, are reported. Measurements were performed for 1000 s, during which negative VTH shifts (i.e., VTH decrease) and negative RON drifts (i.e., RON decrease) were observed. To better understand the origin of these parameter drifts and their possible correlation, measurements were performed for different (i) gate-driving voltage (VGH) and (ii) off-state drain voltage (VPH). We found that VTH reduction leads to a current increase, thus yielding RON to decrease. This correlation was explained by the RON dependence on the overdrive voltage (VGS–VTH). We also found that gate-related effects dominate the parameter drifts at low VPH with no observable recovery, due to the repeated switching of the gate signal required for the parameter monitoring. Conversely, the drain-induced instabilities caused by high VPH are completely recoverable within 1000 s from the VPH removal. These results show that the measurement setup is able to discern the gate/drain contributions, clarifying the origin of the observed VTH and RON drifts.


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