A Landmark in Electrical Performance of IGBT Modules Utilizing Next Generation Chip Technologies

2006 ◽  
Author(s):  
A. Kopta ◽  
M. Rahimo ◽  
S. Eicher ◽  
U. Schlapbach
Keyword(s):  
Electrical Performance ◽  
Next Generation ◽  
Igbt Modules

Z-axis Interconnections for Next Generation Packaging

2011 ◽  
Vol 2011 (1) ◽  
pp. 000469-000475
Author(s):  
Rabindra N. Das ◽  
Frank D. Egitto ◽  
John M. Lauffer ◽  
Tim Antesberger ◽  
Voya R. Markovich
Keyword(s):  
Flip Chip ◽  
Electrical Performance ◽  
Next Generation ◽  
Low Loss ◽  
Electrically Conducting ◽  
S Parameter ◽  
Plastic Ball ◽  
Materials Used ◽  
Electrically Conducting Adhesives

In this paper, the use of electrically conducting adhesives (ECA) to form z-axis interconnections for next generation packaging is discussed. In particular, current efforts related to Z-axis interconnections for device level fabrication, integration, and electrical performance are highlighted. A few optimized ECAs were used for hole fill applications to fabricate Z-axis interconnections in laminates. Conductive joints were formed during composite lamination using the ECA. Around 5,000 to 200,000 through holes in the joining cores, formed by laser or mechanical drilling, and having diameters ranging from 50 μm to 750 μm, were filled with an optimized conducting adhesive. The adhesive-filled joining cores/layers were laminated with circuitized subcomposites to produce a composite structure. As a case study, a variety of z-axis interconnect constructions for a flip-chip plastic ball grid array package, rigid-flex, rigid-rigid, package-interposer-package (PIP), RF structures, and PWBs were fabricated and evaluated at both the subcomposite and composite levels to understand structural and electrical integrity. Electrically, S-parameter measurements showed very low loss at multi-gigahertz frequencies. The losses were low enough to support typical SERDES up to 15 Gbps over 750 mm. The present process allows fabrication of z-interconnect conductive joints having diameters in the range of 55 to 500 μm. The processes and materials used to achieve smaller feature dimensions, satisfy stringent registration requirements, and achieve robust electrical interconnections are discussed.

Coreless Substrate Design, Assembly and Reliability for High Speed Applications

2010 ◽  
Vol 2010 (DPC) ◽  
pp. 001486-001513
Author(s):  
Jon Aday ◽  
Nozad Karim ◽  
Mike Devita ◽  
Steven Lee
Keyword(s):  
High Speed ◽  
Flip Chip ◽  
Core Layer ◽  
Power Delivery ◽  
Advanced Materials ◽  
Band Width ◽  
Electrical Performance ◽  
Next Generation ◽  
Reliability Data ◽  
The Core

There are 2 primary drivers for advanced substrate technologies to support the next generation of products. One driver is silicon designs which are shifting to 20–40 GBit applications. The band width of these products are requiring advanced materials, and designs which use much thinner cores making routing and manufacturing of these packages easier. The second driver is the move more advanced silicon nodes which also drives the importance for much better power delivery. Coreless substrates enable both of these applications by eliminating the core layer which enables much finner via pitchs to route signals and power/gnd planes. The thinness also reduces the bandwidth used up by the substrate which also enables better electrical performance. This paper will focus on the electrical drivers including simulation to support the structure, flip chip assembly of the package as well as the reliability data associated with the assembly.

scholarly journals Materials Selection in Electromagnetic Launcher Design

1989 ◽  
Vol 111 (3) ◽  
pp. 319-326 ◽  
Author(s):  
E. P. Fahrenthold
Keyword(s):  
Numerical Modeling ◽  
Composite Structure ◽  
Electrical Performance ◽  
Next Generation ◽  
Materials Selection ◽  
Electromagnetic Launchers ◽  
Electromagnetic Simulations ◽  
Laboratory Facilities ◽  
Electromagnetic Launcher ◽  
Alternative Designs

The design of electromagnetic launchers includes a large materials selection component, with the use of available structural materials constrained by electrical performance considerations. Feasible material combinations for the composite structure are limited, with mechanical and thermo-electromagnetic simulations required to compare the performance of alternative designs. Numerical modeling studies suggest that next generation devices constructed for laboratory facilities or vehicular mounting may differ markedly in material composition, yet offer similar and significant structural improvements over conventional railgun designs.

Next generation thin film polymers for WLP applications and their mechanical and electrical characterization

2015 ◽  
Vol 2015 (DPC) ◽  
pp. 000656-000678
Author(s):  
Markus Woehrmann ◽  
M. Toepper ◽  
H. Walter ◽  
K.-D. Lang
Keyword(s):  
Thin Film ◽  
Material Property ◽  
Polymer Materials ◽  
Electrical Performance ◽  
Material System ◽  
Next Generation ◽  
Wafer Level ◽  
Aging Effects ◽  
Special Equipment

Thin film polymers, like PI, PBO and BCB are used in every wafer level packaging device. The improvement of the reliability of wafer-level packages and chip I/Os consider the choice of the polymer, which is used as dielectric on the chip, as a minor point. Because the production lines are normally fixed on one polymer and the high investments to evaluate the processing of an alternative polymer formulation in combination with costly reliability test seems to be not attractive till today. But the increased demands of advanced WLP and 3-D-Integration, which includes thin chips, chips stacking and higher routing densities, leads to reaching the limits of the common used material system combinations. The demand of better polymer films becomes evident by the fact that dozens of “next generation polymers” have entered the marked in the last years, which are tailored to get higher mechanical toughness and electrical performance aside of a nearly unchanged resolution capacity. The challenge for new polymer formulation is the evaluation of the processing and the generation of a reliable material property data base, which set the basics for any benchmarking to the already used polymer materials. The processing evaluation is done typically by the material supplier or the fab himself, where no special equipment is needed. The material property generation is a quite more complex topic because you need special equipment and partly the material need to be free standing without any substrate. This is also a handling issue, if we talk about thin films in the range of 5 to 20μm. This paper presents the reliable thin film polymer properties characterization of mechanical and electrical values. The measurements of the mechanical properties include the estimation of parameters like young's modulus, tensile strength, elongation at break, coefficient of thermal expansion, stress and time-temperature related effects. The evident topic of warpage related impacts by “new generation polymers” will be presented and discussed. Measurement structures on wafer-level are developed for the estimation of the electrical parameters, which allows a high accuracy and a device relevant value estimation. Parameters like break down voltage, leakage current, dielectric constant, loss factor are measured related to frequencies by MIM and resonator structures. We demonstrate with analyzing of the time-dependent dielectric breakdown (TDDB) of thin film polymers that there is an exponential linkage between field strength and the time till the breakthrough occurs. The mechanical and electrical properties were also investigated related to aging effects, when the application is running on elevated temperature. We examine a degradation of the mechanical and electrical performance, which should be taken into account for the mechanical system reliability and also for impedance controlled HF-application. This paper present advanced material characterization of thin film polymers which gives a guideline for the decision of the polymer related to the demands of the application.

scholarly journals Color coated glazing for next generation BIPV: performance vs aesthetics

2021 ◽  
Vol 12 ◽  
pp. 11
Author(s):  
Benjamin Riedel ◽  
Paul Messaoudi ◽  
Ya Brigitte Assoa ◽  
Philippe Thony ◽  
Rayan Hammoud ◽  
...  
Keyword(s):  
Electrical Performance ◽  
Electricity Production ◽  
Colored Glass ◽  
Next Generation ◽  
Aesthetic Quality ◽  
Interferential Filter ◽  
Generation Cost ◽  
Cost Efficient ◽  
And Performance ◽  
The Impact

Through the H2020 BE-SMART project, we work on the validation and industrialization of new materials (and processes) for manufacturing next-generation cost-efficient, reliable and highly aesthetic/performing BIPV. On this basis, we aim at introducing novel multifunctional and transformative BIPV elements, in the concept/form of Energy Positive Glazing (EPoG). The project's developments so far indicate the high potential of e.g. using colored encapsulants, interferential filter technique and/or ceramic-based colored glazing for implementing novel “transformative” BIPV with high aesthetic quality. Yet, since BIPV's primary function is electricity production, we need to understand and quantify the impact of such coloration solutions on the performance (and reliability, in longer terms) of future BIPV. In this paper, we present an experimental comparative study on the optical and electrical performance of multiple color coated and patterned BIPV glazing solutions, towards their upscaling and commercialization. In particular, we performed optical transmission measurements and light intensity-/angle-depent IV characterization on 25 different colored glass samples and 10 different colored/patterned glass PV laminates respectively. The measurement results and their discussion presented in this paper provide valuable insights into the optical-electrical performance of the investigated colored BIPV glazing, as well as a first identification of BIPV industry-relevant colors and patterns with the best potential “compromise” between aesthetics and performance, for future energy positive glazing applications.

Electrical and Thermal Performance of 1200 V, 100 A, 200°C 4H-SiC MOSFET-Based Power Switch Modules

2010 ◽  
Vol 645-648 ◽  
pp. 1119-1122 ◽  
Author(s):  
James D. Scofield ◽  
Joseph Neil Merrett ◽  
Jim Richmond ◽  
Anant K. Agarwal ◽  
Scott Leslie
Keyword(s):  
Thermal Performance ◽  
Electrical Performance ◽  
Harsh Environments ◽  
Dynamic Characterization ◽  
Performance Potential ◽  
Power Switch ◽  
Igbt Modules ◽  
Power Modules ◽  
X 32 ◽  
Dynamic Loss

In this paper we report the electrical and thermal performance characteristics of 1200 V, 100 A, 200°C (Tj), SiC MOSFET power modules configured in a dual-switch topology. Each switch-diode pair was populated by 2 x 56 mm2 SiC MOSFETs and 2 x 32 mm2 SiC junction barrier Schottky (JBS) diodes providing the 100 A rating at 200°C. Static and dynamic characterization, over rated temperature and power ranges, highlights the performance potential of this technology for highly efficient drive and power conversion applications. Electrical performance comparisons were also made between SiC power modules and equivalently rated and packaged IGBT modules. Even at a modest Tj=125°C, conduction and dynamic loss evaluation for 20kHz, Id=100A operation demonstrated a significant efficiency advantage (38-43%) over the IGBT components. Initial reliability data also illustrates the potential for SiC technology to provide robust performance in harsh environments.

Material and Process Developments for Robust and High Reliability Glass Wafers for 2.5D Packaging

2015 ◽  
Vol 2015 (DPC) ◽  
pp. 001364-001377
Author(s):  
Roupen Keusseyan ◽  
Tim Mobley
Keyword(s):  
Borosilicate Glass ◽  
High Speed ◽  
High Reliability ◽  
Electrical Performance ◽  
Next Generation ◽  
Wafer Level ◽  
Hole Formation ◽  
Heterogeneous Devices ◽  
Primary Key ◽  
Through Hole

Borosilicate glass based wafer technologies are being developed for next generation high speed electronic, telecom and biotech systems; that integrate heterogeneous devices in a single package for improved electrical performance. The primary key to success is to have a well understood via through the glass that can be used as a core to build wafer level packages from. The present paper will discuss developments in through hole formation technology and via metallization materials and processes. Through hole formation in borosilicate glass with corresponding wall morphology and chemistry play important roles in building robust vias through the glass. These hole characteristics and their dependence on performance, defects at the wafer level and key developments that have been achieved to overcome them will be discussed in detail.

Next Generation Chip Embedding Technology for High Efficient Mid Power Modules

2017 ◽  
Vol 2017 (1) ◽  
pp. 000737-000741
Author(s):  
Kay S. Essig ◽  
CT Chiu ◽  
Jarris Kuo ◽  
Phidia Chen ◽  
Jean-Marc Yannou
Keyword(s):  
Point Of View ◽  
Thermal Dissipation ◽  
Electrical Performance ◽  
Switching Frequency ◽  
Lead Frame ◽  
Next Generation ◽  
Beneficial Effects ◽  
Power Modules ◽  
High Switching Frequency ◽  
High Efficient

Abstract Embedding active dies into the substrate is fulfilling integration requirements for modern communication devices, and furthermore embedding was shown to have beneficial effects on electrical performance and thermal dissipation, especially for mid power modules (from a few hundred watts to 5kW) [1–3]. It comes with strong advantages as the power modules operate at higher frequencies (MHz range) and aim to apply smaller capacitors and inductors. This approach reduces the overall PCB size and weight from system point of view. These beneficial effects were observed especially for embedded power dies that were already mounted in a lead frame cavity when embedding [3]. In this paper we shall report the development of embedded technologies for power modules mounted in a lead frame cavity and compare electrical performance, thermal dissipation and reliability results with conventional PQFN packaging [3]. We shall also report electrical performance in various operation frequency ranges from a few kHz to MHz to address the benefit on high switching frequency power modules for SiC or GaN applications. We will also address if the EMI effect can be eliminated by using chip embedded technology instead of wire bonding connection from driver to gate pad of power MOSFET chip. We will conclude that the challenges of electrical performance and thermal dissipation required for today's power modules can successfully be overcome by next generation power modules based on lead frame chip embedding.

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