Time synchronization successes and challenges in the semiconductor industry

Applications of SIMS to electronic materials and devices

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100133047 ◽

1992 ◽

Vol 50 (2) ◽

pp. 1682-1683

Author(s):

S.F. Corcoran

Keyword(s):

Depth Distribution ◽

Secondary Ion Mass Spectrometry ◽

Semiconductor Device ◽

Electronic Materials ◽

Profile Analysis ◽

Semiconductor Industry ◽

Small Diameter ◽

Depth Resolution ◽

Detection Sensitivity

Over the past decade secondary ion mass spectrometry (SIMS) has played an increasingly important role in the characterization of electronic materials and devices. The ability of SIMS to provide part per million detection sensitivity for most elements while maintaining excellent depth resolution has made this technique indispensable in the semiconductor industry. Today SIMS is used extensively in the characterization of dopant profiles, thin film analysis, and trace analysis in bulk materials. The SIMS technique also lends itself to 2-D and 3-D imaging via either the use of stigmatic ion optics or small diameter primary beams.By far the most common application of SIMS is the determination of the depth distribution of dopants (B, As, P) intentionally introduced into semiconductor materials via ion implantation or epitaxial growth. Such measurements are critical since the dopant concentration and depth distribution can seriously affect the performance of a semiconductor device. In a typical depth profile analysis, keV ion sputtering is used to remove successive layers the sample.

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Analysis of completed commercial semiconductors using EPMA

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100164970 ◽

1996 ◽

Vol 54 ◽

pp. 502-503

Author(s):

R. Packwood ◽

M.W. Phaneuf ◽

V. Weatherall ◽

I. Bassignana

Keyword(s):

Electron Probe Microanalysis ◽

Electron Probe ◽

Semiconductor Industry ◽

Detection Limits ◽

High Technology ◽

Depth Resolution ◽

Analytical Instruments ◽

Wide Range ◽

Numerous Element ◽

Choice Method

The development of specialized analytical instruments such as the SIMS, XPS, ISS etc., all with truly incredible abilities in certain areas, has given rise to the notion that electron probe microanalysis (EPMA) is an old fashioned and rather inadequate technique, and one that is of little or no use in such high technology fields as the semiconductor industry. Whilst it is true that the microprobe does not possess parts-per-billion sensitivity (ppb) or monolayer depth resolution it is also true that many times these extremes of performance are not essential and that a few tens of parts-per-million (ppm) and a few tens of nanometers depth resolution is all that is required. In fact, the microprobe may well be the second choice method for a wide range of analytical problems and even the method of choice for a few.The literature is replete with remarks that suggest the writer is confusing an SEM-EDXS combination with an instrument such as the Cameca SX-50. Even where this confusion does not exist, the literature discusses microprobe detection limits that are seldom stated to be as low as 100 ppm, whereas there are numerous element combinations for which 10-20 ppm is routinely attainable.

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