Uniform and High-Power Characteristics of AlGaInP-based Laser Diodes by 4-inch Wafer Process Technology for DVD-R/RW/RAM

2006 ◽  
Author(s):  
H. Sumitomo ◽  
S. Kajiyama ◽  
H. Oguri ◽  
T. Sakashita ◽  
S. Domoto ◽  
...  
Keyword(s):  
High Power ◽  
Laser Diodes ◽  
Process Technology ◽  
Power Characteristics

Uniform and High-Power Characteristics of AlGaInP-Based Laser Diodes With 4-Inch-Wafer Process Technology

2007 ◽  
Vol 13 (5) ◽  
pp. 1170-1175 ◽  
Author(s):  
Hiroyuki Sumitomo ◽  
Satoshi Kajiyama ◽  
Hiroyuki Oguri ◽  
Takeshi Sakashita ◽  
Toru Yamamoto ◽  
...  
Keyword(s):  
High Power ◽  
Laser Diodes ◽  
Process Technology ◽  
Power Characteristics

Uniform and high-power characteristics of 780-nm AlGaAs TQW laser diodes fabricated by large-scale MOCVD

1994 ◽  
Vol 30 (1) ◽  
pp. 24-30 ◽  
Author(s):  
A. Shima ◽  
M. Miyashita ◽  
T. Miura ◽  
T. Kadowaki ◽  
N. Hayafuji ◽  
...  
Keyword(s):  
High Power ◽  
Large Scale ◽  
Laser Diodes ◽  
Power Characteristics

Limitations to brightness in high power laser diodes

2015 ◽  
Author(s):  
P. Crump ◽  
M. Winterfeldt ◽  
J. Decker ◽  
M. Ekterai ◽  
J. Fricke ◽  
...  
Keyword(s):  
High Power ◽  
Laser Diodes ◽  
High Power Laser ◽  
Power Laser

Thermal condition of high-power laser diodes

2015 ◽  
Vol 42 (3) ◽  
pp. 88-92 ◽  
Author(s):  
V. V. Bezotosnyi ◽  
O. N. Krokhin ◽  
V. A. Oleshchenko ◽  
V. F. Pevtsov ◽  
Yu. M. Popov ◽  
...  
Keyword(s):  
High Power ◽  
Thermal Condition ◽  
Laser Diodes ◽  
High Power Laser ◽  
Power Laser

scholarly journals The Evolution of Manufacturing Technology for GaN Electronic Devices

Micromachines ◽  
2021 ◽  
Vol 12 (7) ◽  
pp. 737
Author(s):  
An-Chen Liu ◽  
Po-Tsung Tu ◽  
Catherine Langpoklakpam ◽  
Yu-Wen Huang ◽  
Ya-Ting Chang ◽  
...  
Keyword(s):  
Mobile Communications ◽  
High Power ◽  
Electronic Devices ◽  
High Volume ◽  
Cmos Technology ◽  
High Electron ◽  
Process Technology ◽  
Unit Process ◽  
Rf Power Amplifier ◽  
Device Technology

GaN has been widely used to develop devices for high-power and high-frequency applications owing to its higher breakdown voltage and high electron saturation velocity. The GaN HEMT radio frequency (RF) power amplifier is the first commercialized product which is fabricated using the conventional Au-based III–V device manufacturing process. In recent years, owing to the increased applications in power electronics, and expanded applications in RF and millimeter-wave (mmW) power amplifiers for 5G mobile communications, the development of high-volume production techniques derived from CMOS technology for GaN electronic devices has become highly demanded. In this article, we will review the history and principles of each unit process for conventional HEMT technology with Au-based metallization schemes, including epitaxy, ohmic contact, and Schottky metal gate technology. The evolution and status of CMOS-compatible Au-less process technology will then be described and discussed. In particular, novel process techniques such as regrown ohmic layers and metal–insulator–semiconductor (MIS) gates are illustrated. New enhancement-mode device technology based on the p-GaN gate is also reviewed. The vertical GaN device is a new direction of development for devices used in high-power applications, and we will also highlight the key features of such kind of device technology.

scholarly journals Double-asymmetric-structure 1.5 μ m high power laser diodes

2019 ◽  
Author(s):  
Lauri Hallman ◽  
Boris S. Ryvkin ◽  
Eugene A. Avrutin ◽  
Antti T. Aho ◽  
Jukka Viheriala ◽  
...  
Keyword(s):  
High Power ◽  
Laser Diodes ◽  
Asymmetric Structure ◽  
High Power Laser ◽  
Power Laser
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