Continuous wave operation of 1.3 μm vertical cavity InGaAsN quantum well lasers

2005 ◽  
Author(s):  
A.J. Fischer ◽  
J.F. Klem ◽  
K.D. Choquette ◽  
O. Blum ◽  
A.A. Allerman ◽  
...  
Keyword(s):  
Quantum Well ◽  
Continuous Wave ◽  
Quantum Well Lasers ◽  
Continuous Wave Operation ◽  
Vertical Cavity

2.4 µm InP-based antimony-free triangular quantum well lasers in continuous-wave operation above room temperature

2014 ◽  
Vol 7 (3) ◽  
pp. 032701 ◽  
Author(s):  
Yi Gu ◽  
Yonggang Zhang ◽  
Yuanying Cao ◽  
Li Zhou ◽  
Xingyou Chen ◽  
...  
Keyword(s):  
Quantum Well ◽  
Room Temperature ◽  
Continuous Wave ◽  
Quantum Well Lasers ◽  
Continuous Wave Operation

Mid-infrared W quantum-well lasers for noncryogenic continuous-wave operation

2001 ◽  
Vol 40 (6) ◽  
pp. 806 ◽  
Author(s):  
Christopher L. Felix ◽  
William W. Bewley ◽  
Igor Vurgaftman ◽  
Robert E. Bartolo ◽  
Donna W. Stokes ◽  
...  
Keyword(s):  
Quantum Well ◽  
Continuous Wave ◽  
Quantum Well Lasers ◽  
Mid Infrared ◽  
Continuous Wave Operation

Continuous wave operation on extremely low‐temperature (375 °C)‐grown AlGaAs quantum‐well lasers

1993 ◽  
Vol 62 (6) ◽  
pp. 624-626 ◽  
Author(s):  
Sei‐ichi Miyazawa ◽  
Yoshinobu Sekiguchi ◽  
Masahiro Okuda ◽  
Mitsutoshi Hasegawa ◽  
Hidetoshi Nojiri
Keyword(s):  
Low Temperature ◽  
Quantum Well ◽  
Continuous Wave ◽  
Quantum Well Lasers ◽  
Continuous Wave Operation

RELIABILITY OF PROTON IMPLANTED VERTICAL CAVITY SURFACE EMITTING LASERS

1994 ◽  
Vol 05 (04) ◽  
pp. 731-764 ◽  
Author(s):  
CHANG-CHERNG WU ◽  
KUOCHOU TAI ◽  
KAI-FENG HUANG ◽  
CHUN-YEN CHANG
Keyword(s):  
Quantum Well ◽  
Continuous Wave ◽  
Quantum Well Lasers ◽  
Implantation Technique ◽  
Cavity Surface ◽  
Time To Failure ◽  
Surface Emitting Lasers ◽  
Vertical Cavity Surface ◽  
Emitting Lasers ◽  
Vertical Cavity

Reliable gain-guided vertical cavity surface emitting lasers were fabricated by the proton implantation technique at the 0.85 and 0.98 μm emission wavelengths. The device failure mode was found to be mainly the gradual degradation mode, manifested in the gradual reduction of output power and gradual increase of diode series resistance. Continuous wave operation of the 0.85 μm GaAs/AlGaAs quantum well lasers for 12,000 hours was seen at 25 and 50°C at 15 mA (~ 4 Ith). Extrapolation from accelerated aging test performed at higher temperatures yields a 25°C mean-time-to-failure of 1−2.5×105 hours at 15 mA. For the 0.98 μm InGaAs/GaAs strained quantum well lasers, a much slower degradation rate at high temperatures was seen in the 0.85 μm lasers. Secondary ion mass spectrometry revealed that the implant proton depth is short enough that the active region of these lasers is free from proton bombardment. The near field emission pattern of the aged lasers by cathodo-luminescence and electro-luminescence microscopies did not contain dark spots and line features.

Sign in / Sign up

Export Citation Format

Share Document